• Journal of the Korean institute of surface engineering
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• v.26 no.5
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• pp.245-254
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• 1993

The effects of pulse current electrolysis conditions on the composition and the microstructure of Ag-Sn alloy were studied by using a pyrophosphate bath. Both cathode current efficiency and throwing power of alloy deposits formed under pulse plating conditions, decreased with increasing mean current density, and lower than those under D.C. electrolysis condition. Tin content of Ag-Sn alloy decreased noticebly with in-creasing the mean current density, while it increased with the increase of On-time from 1 to 10 ms. The pre-ferred orientation of Ag-Sn alloy changed with increasing cathode overpotential in the sequence of (100)longrightarrow(100)+(111)longrightarrow(111) at $20^{\circ}C$ and (110)longrightarrow(111)longrightarrow(111)+(100) at $30^{\circ}C$. The effective crystal grain size of the alloy was decreased by decreasing temperature from $30^{\circ}C$ to $20^{\circ}C$ and the surface structure of them was related to the preferred orientation.

• Journal of the Korean institute of surface engineering
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• v.34 no.4
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• pp.303-312
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• 2001

Composition and microstructure of the tin-zinc alloys electroplated in gluconate bath were studied according to pulse current parameters. The cathode current efficiency increased with both the mean current density and the off-time decrease. Zinc content of the alloy deposits increased with increasing mean current density, while it decreased noticebly with increasing the off-time from 10-30ms to 100-150ms. The preferred orientation of the alloy deposits changed with the increase of peak current density in the sequence of (220)longrightarrow(220)+(420) or (220)+(420)+(321) mixed structure. The equiaxed grain size of the alloy increased with the increase of off-time and the decrease of mean current density.

• Bulletin of the Korean Chemical Society
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• v.11 no.5
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• pp.379-383
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• 1990

$YBa_2Cu_{3-x}Ni_xO_{7-{\delta}}$, with x = 0.05, 0.2, 0.4, 0.7 and 1.0 had been prepared by the thermal decomposition of corresponding nitrates. Among them, the sample with x = 0.05 shows above-liquid-$N_2$ temperature superconductivity with $T_c$ of 88.7K. According to the X-ray diffraction analysis, its crystal symmetry was estimated as orthorhombic with the lattice parameters of a = 3.866${\AA}$, b = 3.893${\AA}$, c = 11.715${\AA}$. The chemical composition of the sample was determined by electron probe microanalysis and the chemical composition around its grain boundaries was carefully studied by the X-ray line scanning technique. From the observed binding energy of Ni-$2p_{3/2}$ orbital electron (B.E. = 853 eV) measured by X-ray photoelectron spectroscopy, the valency state of nickel stabilized in $YBa_2Cu_{2.95}Ni_{0.05}O_{7-{\delta}}$ oxide lattice could be determined to be Ni(II).

• Journal of the Korean Professional Engineers Association
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• v.3 no.10
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• pp.3-6
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• 1970

The scheelite occurred in Sang Dong mine are disseminated with a fine grain, and shelved pale blue or white color under the fluorescence. But among them, We can often observe the yellow fluorescent color mineral grains, which were called the powellite from the past time without any detail mineral study. I studied the characteristics of Sang-Dong scheelite and the so called powellite. In the result, the so called powellite is proved to be the molybdenum bearing scheelite in the view of specific gravity, index of refraction, chemical composition, other microscopic properties, and dressing. Such a scheelite is contained usually Zor 3% Mo, and oftenly 4 or 6% Mo, and fluorescent colors are pale yellow, leman yellow and chrome yellow.

• Journal of Photoscience
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• v.3 no.3
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• pp.159-161
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• 1996

Photosensitivity of silver halide emulsion depends on the properties of the microcrystals. Size, shape, grain distribution and chemical composition as well as the inner structure or the topography of the latent image specks affect on the optical properties and play an important role in the photographic process. In the present paper, a study on the sensitization of emulsion containing AgBrClI core/shell grains showed that for the given size, shape, halide content and crystal habit, under the optimal conditions the photosensitivity of the heterojunction type grains are different from that of the common regular grains. The optimal photosensitivity was obtained at the iodide content of 2.0 mo1%.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.140.1-140
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• 2002

• Journal of the Korean Ceramic Society
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• v.28 no.10
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• pp.803-809
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• 1991

Microstructure, room temperature resistivity and temperature coefficient of resistance of BaTiO3 ceramics were characterized and measured in this study. The basic composition of the BaTiO3 cremics was formed by adding 0.25 mol% Dy2O3 and 0.07 mol% MnO2 to the BaTiO3 composition. Samples of the BaTiO3 ceramics were prepared by adding various amounts of the TiO2, SiO2 and Al2O3 to the basic composition. An addition of 1 mol% TiO2, 2 mol% SiO2 and 0.5 mol% Al2O3 to the basic composition resulted both the values of the room temperature resistivity and the temperatured coefficient being maxium. Meanwhile, an addition of 1 mol% TiO2 and 1 mol% Al2O3 to the basic composition resulted the value of the room temperature resistivity maxium and the temperature coefficient minimum. The temperature coefficient showed a maximum value as well as a minimum value when the three kinds of the additives were added together to the basic composition of the BaTiO3 ceramics. Maxed phases of BaTi3O7, BaTiSiO5 and BaAl2Si2O8 were present at the grain boundary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.61.1-61.1
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• 2010

$CuIn_{1-x}-GaxSe_2$ based materials with direct bandgap and high absorption coefficient are promising materials for high efficiency hetero-junction solar cells. CIGS champion cell efficiency(19.9%, AM1.5G) is very close to polycrystalline silicon(20.3%, AM1.5G). A reduction in the price of CIGS module is required for competing with well matured silicon technology. Price reduction can be achieved by decreasing the manufacturing cost and by increasing module efficiency. Manufacturing cost is mostly dominated by capital cost. Device properties of CIGS are strongly dependent on doping, defect chemistry and structure which in turn are dependent on growth conditions. The complex chemistry of CIGS is not fully understood to optimize and scale processes. Control of the absorber grain size, structural quality, texture, composition profile in the growth direction is important to achieving reliable device performance. In the present work, CIS nanoparticles were prepared by a simple wet chemical synthesis method and their structural and optical properties were investigated. XRD patterns of as-grown nanopowders indicate CIS(Cubic), $CuSe_2$(orthorhombic) and excess selenium. Further, as-grown and annealed nanopowders were characterized by HRTEM and ICP-OES. Grain growth of the nanopowders was followed as a function of temperature using HT-XRD with overpressure of selenium. It was found that significant grain growth occurred between $300-400^{\circ}C$ accompanied by formation of ${\beta}-Cu_{2-x}Se$ at high temperature($500^{\circ}C$) consistent with Cu-Se phase diagram. The result suggests that grain growth follows VLS mechanism which would be very useful for low temperature, high quality and economic processing of CIGS based solar cells.