• 한국재료학회지
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• 제1권3호
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• pp.125-131
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• 1991

pMOS소자의 $p^{+}$게이트 전극으로 다결정실리콘과 비정질실리콘을 사용하여 고온의 열처리 공정에 따른 붕소이온의 침투현상을 high frequency C-V plot, Constant Current Stress Test(CCST), Secondary Ion Mass Spectroscopy(SIMS) 및 Transmission Electron Microscopy(TEM)를 이용하여 비교하였다. C-V plot분석 결과 비정질실리콘 게이트가 다결정실리콘 게이트에 비해 flatband전압의 변화가 작게 나타났으며, 게이트 산화막의 절연파괴 전하밀도에서는 60~80% 정도 향상된 값을 나타내었다. 비정질실리콘 게이트는 증착시 비정질로 형성되는 구조로 인한 얇은 이온주입 깊이와 열처리 공정시 다결정실리콘에 비교하여 크게 성장하는 입자 크기 때문에 붕소이온의 침투 경로가 되는 grain boundary를 감소시켜 붕소이온 확산을 억제한 것으로 생각된다. Electron trapping rate와 flatband 전압 변화와의 관계에 대하여 고찰하였다.

• 열처리공학회지
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• 제6권2호
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• pp.98-106
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• 1993

Ultra high carbon steel (Fe-1.4%C) was prepared by means of a high frequency induction furnace. The preferred nucleation site of martensite was observed. The changes of hardness and impact thoughness due to tempering temperatures, and the spheroidization of cementite by controlled -rolling were also studied for the steel. The preferred nucleation site of martensite in the ultra high carbon steel is prior austenite grain boundary. The hardness of the steel is slightly increased up to about $300^{\circ}C$, and then decreased with further tempering temperature. However, the impact energy keeps a almost constant value, independent of the tempering temperature. The spheroidization of cementite is accelerated as the reduction in thickness per rolling pass is increased and the number of the rolling passes becomes greater.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1418-1420
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• 2003

In this study capacitance and dielectric loss tan${\delta}$were measured with frequency changes for commercial $Z_nO$ varistors with pin-type leads and equivalent circuit simulation was proposed. The leakage inductance in pin leads and the stray caoacitance could be seperated from the dielectric characteristics of $Z_nO$ varistors by the simulation of equivalent circuit. The equivalent circuit model considered semiconduction layer, dielectric layer and depletion layer as the grain boundary structure of varistor is well fitted to the observed data.

• 한국재료학회지
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• 제34권5호
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• pp.242-246
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• 2024

La modified lead zirconate titanate ceramics (Pb_0.92La_0.08)(Zr_0.95Ti_0.05)O₃ = PLZT-8/95/5 were prepared using the conventional solid state reaction method in order to investigate the complex impedance characteristics of the PLZT-8/95/5 ceramic according to temperature. The complex impedance in the PLZT-8/95/5 ceramic was measured over a temperature range of 30~550 ℃ at several frequencies. The complex dielectric constant anomaly of the phase transition was observed near T_U1 = 179 ℃ and T_U2 = 230 ℃. A remarkable diffuse dielectric constant anomalous behaviour of the complex dielectric constant was found between 100 ℃ and 550 ℃. The complex impedance spectra below and above T_U1 and T_U2 were fitted by the superposition of two Cole-Cole types of impedance relaxations. The fast component in the higher frequency region may be due to ion migration in the bulk, and the slow component in the lower frequency region is interpreted to be the formation and migration of ions at the grain boundary or electrode/crystal interfacial polarization.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.258-261
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• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

• Journal of the korean society of oceanography
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• 제39권1호
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• pp.96-106
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• 2004

A total of 116 surface sediment samples were obtained on the Yellow Sea and analyzed for grain size and geochemical elements in order to interpret the present sediment transportation. Thirty-nine cores and 3,070 line-km shallow seismic profiles are analyzed for sedimentary records of Yellow Sea in the past. Results show that the boundary of sediment transport between Korean side and Chinese side is about between $123^{\circ}E$ and $124^{\circ}E$. The similar result is produced from Shi et al. (in this publication). Two cyclonic patterns of surface sediments are recognized in the northeastern and southwestern Yellow Sea, while the strong front zone of the mud patch and sandy sediments are found in the southeastern Yellow Sea (the southwestern part of Korean coasts). The formation of fine-particle sediment packages, called for Northwest Mudbelt Deposit (NWMD), Hucksan Mudbelt Deposit (HSMD) and Jeju Mudbelt Deposit (JJMD), are resulted from eddies (gyres) of water circulations in the Yellow Sea. NWMD has been formed by cyclonic (anticlockwise) eddy. NWMD is composed of thick, homogeneous, relatively semi-consolidated gray clay-dominated deposit. On the other hand, HSMD and JJMD are formed by anticyclonic (clockwise) eddies. They are thick, homogeneous, organic-rich gray, silt-dominated deposit. Both core and surface sediments show that the middle zone across Chinese and Korean side contains bimodal frequency of grain-size distribution, indicating that two different transport mechanisms exist. These mud packages are surrounded by sand deposits from both Korea and China seas, indicating that Yellow Sea, which is the shallow sea and epicontinental shelf, is formed mostly by sand deposits including relict sands. The seismic profiles show such as small erosional/non-depositional channels, sand-ridges and sand-waves, Pleistocene-channelfilled deposits, a series of channels in the N-S major channel system, and thick Holocene sediment package, indicating that more complex sedimentary history exists in the Yellow Sea.

• 한국세라믹학회지
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• 제23권6호
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• pp.37-44
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• 1986

Yttria-antimonia-stabilized zirconia was investigated with respect to the amount of $Sb_2O_3$ addition in the range of 0.5~5mole% to the base composition of $(ZrO)_{0.92}(Y_2O_3)_{0.08}$ The sinterbility modulus of rupture Vickers hardness evaporation of components phase form-tion and mcicrostructure were evaluated with antimonia content. Also two probe A. C conductivity measurement was subjected to all specimens and the best results are achieved with 1mol% $Sb_2O_3$ as a sinter agent and relative density of~98% obtained at 140$0^{\circ}C$ and this composition has a maximum electrical conductivity due to the possible substition of $Sb^{3+}$ for $Zr^{4+}$ site. The effect of $Sb_2O_3$ on the electrical conductivity of th bulk and the grain boundaries has on investigated using frequency dispersion analysis (5~106 Hz) Antimonia addition has a negative in-fluence on both the bulk and the grain boundary conductivity except for a 1 mon% addition. The additive antimonia has improve a modulus of rupture to 60~MPa due to metastable-tetragonal phase apparence and decrease the hardness with increasing the $Sb_2O_3$ content.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2001년도 추계학술대회(한국공작기계학회)
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• pp.319-323
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• 2001

In significant number of energy-related facilities for like thermal power plant or petro-chemical industry, CrMo steels are widely used energy conversion industries. However, these materials undergo precipitation of carbides or intermetallic compounds into grain boundary and change of internal microstructure such as coarsening of precipitation, decrease of solute elements and impurity segregation under more severe service conditions, which results in deterioration of inherent superior material characteristics. In this study, it was verified experimentally the feasibility of the aging degradation evaluation for degraded 2.25Cr-lMo steel specimens prepared by isothermal aging heat treatment at 63$0^{\circ}C$ by high frequency longitudinal ultrasonic and surface SH wave investigating the change of attenuation coefficient analyzed by spectral analysis. Attenuation coefficient had a tendency to increase as degradation proceeded.

• 한국재료학회지
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• 제4권5호
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• pp.535-540
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• 1994

Thin film magnet was fabricated by radio frequency magnetron sputtering using $Nd_13/(Fe.Co)_{70}B_{17}$ alloy target and magnetic properties were investigated according to sputtering conditions from the metallurgical point of view. we could obtain the best preferred orientation of $Nd_2Fe_{14}B$ phase at substrate temperatures between $450^{\circ}C$ and $460^{\circ}C$ with the input power 150W, and thin films had the anisotropic magnetic properties. But, as the thickness of thin film increased, the c-axis orientation gradually tended to be disordered and magnetic properties also become isotropic. Just like Nd-Fe-B meltspun ribbon, the microstructure of thin film magnet was consisted of very find cell shaped $Nd_2Fe_{14}B$ phase and the second phase along grain boundary. While, domain structure showed maze patterns whose magnetic easy axis was was perpendicular to film plane of thin film. It was concluded from these results that the perpendicualr anisotropy in magnetization was attributed to the perpendicular alignment of very find $Nd_2Fe_{14}B$ grains in thin film.

• 센서학회지
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• 제6권6호
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• pp.483-490
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• 1997

Thin film Si has been used in sensors, radiation detectors, and solar cells. The carrier mobility of thin film Si influences the device behavior through its frequency response or time response. Since poly-Si shows the higher mobility value, a-Si:H films on Mo substrate were subjected to various crystallization treatments. Consequently, we need to find an appropriate method in mobility measurement before and after the anneal treatment. This paper investigates the carrier mobility improvement with anneal treatments and summarizes the mobility measurement methods of the a-Si:H and poly-Si film. Various techniques were investigated for the mobility determination such as Hall mobility, HS, TOF, SCLC, TFT, and TCO method. We learned that TFT and TCO method are suitable for the mobility determination of a-Si:H and poly-Si film. The measured mobility was improved by $2{\sim}3$ orders after high temperature anneal above $700^{\circ}C$ and grain boundary passivation using an RF plasma rehydrogenation.