• Journal of Sensor Science and Technology
• /
• v.9 no.1
• /
• pp.76-82
• /
• 2000

PTC thermistors with multilayer structure were fabricated by internal electrode bonding technique in order to realize low resistance. MLPTC (Multilayer Positive Temperature Coefficient) possess various features, such as small size, low resistivity and large current. We describe the effect of additives on the PTC characteristics, voltage - current characteristics, temperature dependence of resistance and complex impedance spectra as a function of frequency range 100 Hz to 13MHz to determine grain boundary resistance. It was found that MLPTC thermistor has both highly nonlinear effects of temperature dependent resistance and voltage dependent current behaviors, which act as passive element with self-repair mechanisms. Decrease of room temperature resistance with increasing the number of layers was demonstrated to be a grain boundary effect. Switching characteristics of current were caused by heat capacity of PTC thermistor with multilayer structure. Switching times are lengthened by increasing the number of layers.

• Journal of the Korean Ceramic Society
• /
• v.24 no.1
• /
• pp.63-69
• /
• 1987

Effect of MoO3 additiion on the semiconductive BaTiO3 ceramics doped with 0.2 mole% Nb2O5 and their frequency characteristics have been investigated on the view of intergranular barrier layer model through the observation of changes in their electrical properties. The resistivity increases with the increase of MoO3 addition, but the capacitance, the frequency dependence of capacitance and the effect of positive temperature coefficient of resistivity (PTCR) decrease. It is explained by the possible increase in the thickness of potential barrier due to the formation of insulating layer and thus decrease in the degree of energy band bending. Both the PTCR effect and resistivity decrease with the increase of frequency due to the possible elimination of barrier layer at the grain boundary.

• Bulletin of the Korean Chemical Society
• /
• v.10 no.6
• /
• pp.495-500
• /
• 1989

The ionic conductivity of polycrystalline, glass, and glass-ceramic silicates was measured using two-terminal AC method with blocking electrode over a frequency range of 100 Hz to 100 KHz in the temperature range of $200^{\circ}C$ to $320^{\circ}C$. Analysing the capacitance (C), susceptance (B), impedance (Z), and conductance (G) under the given conditions, an equivalent circuit containing temperature and frequency dependent component is proposed. Higher capacitance could be observed in the low frequency region and on the improved ionic migration conditions i.e., at higher temperature in a better ionic conductor. Also the electrode polarization built up at the electrode-specimen interface could be sorted out above 10 KHz. However, grain boundary contribution couldn't be extracted from the bulk resistance over the frequency range measured here.

• Korean Journal of Materials Research
• /
• v.3 no.6
• /
• pp.585-592
• /
• 1993

The effects of grain size and microstructure on the ultrasonic attenuation was investigated with SCM440 steel quenched and tempered at various temperatures. The ultrasonic attenuation was primarily due to the grain boundary scattering and the ultrasonic attenuation coeffecient increased with increasing grain size. In the meantime, it was found that the ultrasonic attenuation coefficient decreased with increasing tempering temperature. The dependence of ultrasonic attenuation coefficient on the frequency of ultrasonic wave had linear relationship on a log-log scale and was proportional to the Roney's equation.

• Journal of the Korean Ceramic Society
• /
• v.33 no.11
• /
• pp.1245-1252
• /
• 1996

The charcteristics for the copper-contained spinel ferrites such as NiCu-and ZnCu ferrites with various copper content are investigated in this study which can provide a explanation for the behavior of copper in sintering at a low temperatuer. The bulk density and the grain size for these sintered ferrites were increased with the larger amount of copper in compositions. In microstructure of copper-contained spinel ferrites copper exists in the grain boundary which is sintering process. Electrical resistivity and frequency range with maximum Q-facor of NiCu-or ZnCu ferrites were decreased as increasing of copper content in ferrite composition.

• Journal of the Korean Ceramic Society
• /
• v.25 no.3
• /
• pp.293-299
• /
• 1988

The effects of flux KCl and dopants, La2O3 and Ta2O5, on the PTCR characteristics in molten salt synthesized BaTiO3 have been studied. The resistivity of BaTiO3 at room temperature decreases with increasing amount of dopant La2O3 up to 0.2 atom%, and then increases with La2O3 content. In case of dopant Ta2O5, it increases with increasing amount ofthe dopant. These results could be explained by observation of the microstructure and defect equation. From the results of complex impedance-frequency characteristics, the grain resistances are almost same but the resistances at the grain boundary are quite different.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.857-860
• /
• 2000

The objective of this paper is to demonstrate degradation phenomena through DC degradation tests and predicts degradation phenomena as a function of time from the tests. The ZnO varistor used in this investigation were fabricated by standard ceramic techniques. Especial, these were sintered in nitrogen atmosphere, at 2 h, for $1300^{\circ}C$. The conditions of DC degradation test were 115$\pm$$2^{\circ}C$for 0, 2, 4, and 8 h, respectively. To demonstrate the degradation phenomena of ZnO varistors, Voltagecurrent analyses were performed before and after the degradation test, and frequency analyses were used with the time of the degradation tests. It was found that the degradation occurred in not grain but grain boundary and the degradation behavior of varistors was unsymmetrically degraded with the direction of tests.

• Journal of the Korean Ceramic Society
• /
• v.28 no.10
• /
• pp.785-792
• /
• 1991

An investigation of the crack propagation behavior of Al2O3-33Vol.% SiCw at 140$0^{\circ}C$ was conducted with various loading frequencies. Higher crack propagation was observed in lower frequency and higher load ratios. Interface sliding fracture due to glassy phase from the oxidation of SiCw and cavitation along grain boundary of diffusional creep appeared to be the main mechanism of fatigue fracture in slower crack propagation while interface sliding and whisker pull out aided by glassy phase formation played main role of fatigue fracture for higher crack growth condition. The frequency effect on deformation behavior was discussed with a Maxwell model.

• International Journal of Precision Engineering and Manufacturing
• /
• v.8 no.4
• /
• pp.33-37
• /
• 2007

Creep failure of 316LN stainless steel (SS) occurs due to the nucleation and growth of cracks. An investigation was performed to correlate the creep damage with ultrasonic wave speeds and angular frequencies using creep-tested 316LN SS specimens. Ultrasonic wave measurements were made in the direction of and perpendicular to the loading using contact probes with central frequencies of 10, 15, and 20 MHz. We found that the angular frequency and wave speed decreased with increasing creep time to rupture by analyzing the ultrasonic signals from the 15 and 20 MHz probes. Therefore, the creep damage was sensitive to the angular frequency and wave speed of ultrasonic waves.

• Korean Journal of Materials Research
• /
• v.16 no.6
• /
• pp.360-366
• /
• 2006

A series of ZnO thin films were grown by radio-frequency (RF) magnetron sputtering with various RF powers on $SiO_2/Si$(100) substrates at $500^{\circ}C$. Thicknesses of the investigated ZnO films were fixed to about 250nm by changing the growth time based on the changes of growth rates with RF powers. All the ZnO thin films were grown with <0001> preferred orientation. Average grain sizes of about 250nm-thick ZnO films evaluated by FE-SEM, AFM, and TEM were increased by decreasing the RF power. Structural properties addressed by FWHM values of XRD (0002) omega rocking curves and their intensities were better for the smaller grain sized ZnO films grown with high RF powers, which implies small values of tilt for smaller grain sized ZnO films. However, optical properties addressed by intensities of band edge emissions from room temperature and low temperature photoluminescence were better for the larger grain sized ZnO films with low RF power, which implies grain boundaries acted as nonradiation recombination centers.