• Title/Summary/Keyword: grain boundary

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Structural, optical, and electrical properties on Cu(In,Ga)$Se_2$ thin-films with Cu-defects and In/(In+Ga) ratio (Cu(In,Ga)$Se_2$ 박막의 Cu 결함 및 In, Ga 비율의 변화에 따른 구조적, 광학적, 전기적 특성 연구)

  • Jeong, A.R.;Kim, G.Y.;Jo, W.;Jo, H.J.;Kim, D.H.;Sung, S.J.;Kang, J.K.;Lee, D.H.;Nam, D.H.;Cheong, H.
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.47.1-47.1
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    • 2011
  • We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.

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A Study on the Grain Size Dependence of Hardness in Nanocrystalline Metals (나노결정금속의 경도의 결정립도의존성에 관한 연구)

  • 김형섭;조성식;원창환
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1997.03a
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    • pp.73-76
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    • 1997
  • Nanocrystalline materials have been modeled as a mixture of the crystallite and the grain boundary phases. The mechanical property has been calculated using the rule of mixtures based on the volume fractions. The critical grain size concept suggested by Nieh and Wadsworth and porous material model suggested by Lee and Kim were applied to the calculation. The theoretical results fit very well with the experimental values

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Study on the Deformation Characteristics of Grain Boundary in Nanolithography Process (분자동력학을 이용한 나노 리소그래피 공정의 결정립계의 변형 거동 연구)

  • Kim, Chan-Il;Hyun, Sang-Il;Kim, Young-Suk
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.326-331
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    • 2007
  • Large-scale molecular dynamics simulations are performed to verify the deformation characteristics of grain boundaries in nanolithography process. The copper substrate made of 200,000 atoms is constructed by two grains in different crystal orientations using dynamic relaxation method. The grain boundary is located in the middle of the substrate with $45\sim135$ degree angles. The plowing tip is made of diamond-like-carbon atoms in a variety of shapes. In the simulations, the generation, propagation, and accumulation of dislocations are observed inside the substrate. From the numerical results, we address the dynamic behavior of the grain boundaries as well as the frictional characteristics in terms of the morphology of initial grain boundaries.

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Modelling of Grain Boundary in Polysilicon Film for Photodetector Through Current-Voltage Analysis (광검출기용 다결정 실리콘 박막의 전도특성 분석을 통한 결정립계의 모형화)

  • Lee, Jae-Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.4
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    • pp.255-262
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    • 2020
  • Grain boundaries play a major role in determining device performance, particularly of polysilicon-based photodetectors. Through the post-annealing of as-deposited polysilicon and then, the analysis of electric behavior for a metal-polysilicon-metal (MSM) photodetector, we were able to identify the influence of grain boundaries. A modified model of polysilicon grain boundaries in the MSM structure is presented, which uses a crystalline-interfacial layer-SiOx layer- interfacial layer-crystalline system that is similar to the Si-SiO2 system in MOS device. Hydrogen passivation was achieved through a hydrogen ion implantation process and was used to passivate the defects at both interfacial layers. The thin SiOx layer at the grain boundary can enhance the photosensitivity of an MSM photodetector by decreasing the dark current and increasing the light absorption.

The Effect of Plastic Strain on the Superplastic Deformation Behavior (초소성변형특성에 미치는 소성변형랴의 영향)

  • 권용남;장영원
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 1997.03a
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    • pp.291-293
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    • 1997
  • The effect of strain accumulation on the superplastic deformation behavior has been investigated through a series of load relaxation tests. The experimental results were analyzed using the recently proposed inelastic constitutive theory. The superplastic deformation of fine grained materials is confirmed to consist of grain boundary sliding and accommodating grain matrix deformation. However the flow behavior is changed with the plastic strain. It is believed that the microstructural changes such as grain growth and cavitation affect the superplastic deformation behaviors.

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Effect of grain boundary precipitation on low-cycle fatigue behavior aat elevated temperature of SUS 316 stainless steel (SUS 316鋼 의 高溫低사이클 피勞擧動 에 미치는 粒界절出物 의 影響)

  • 오세욱;국미무;산전방박;좌등철
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.4 no.4
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    • pp.152-159
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    • 1980
  • The temperature and the grain boundary precipitation have the great influence on the low-cycle fatigue behavior of austenite stainless steel at elevated temperature. For the purpose of investigating the mechanism concerning the change of fatigue micro crack mode in SUS 316 under various conditions low-cycle fatigue test was carried out at the elevated temperature 600.deg.C, plastic strain range 2% and constant strain rate .5c.p.m. A special attention is given to the observation of intergranular crack initiation. The results obtained are summarized as follows. The low-cycle fatigue behavior of SUS 316 at 600.deg.C is affected by transition of crack initiation mode from intergranular to transgranular. The transition is due to the aging effect, which is caused by grain boundary precipitations of Cr$\_$23/C$\_$6/. Since the intergranular crack initiation is brought about by the grain boundary sliding, the transgranular crack initiates in case that the strengthening of grain boundary due to the precipitation of Cr$\_$23/C$\_$6/ carbides takes place ahead of the intergranular crack initiation.

High Temperature Creep Behavior in Al-Mg(Zn)-Fe Alloys

  • Bae, Chang-Hwan;Lee, Ju-Hee;Han, Chang-Suk
    • Korean Journal of Materials Research
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    • v.20 no.1
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    • pp.37-41
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    • 2010
  • Creep tests were conducted under a condition of constant stress on two aluminum-based alloys containing particles: Al-5% Mg-0.25% Fe and Al-5% Zn-0.22% Fe. The role of grain boundary sliding was examined in the plane of the surface using a square grid printed on the surface by carbon deposition and perpendicular to the surface using two-beam interferometry. Estimates of the contribution of grain boundary sliding to the total strain, $\varepsilon_{gbs}/\varepsilon_t$ reveal two trends; (i) the sliding contribution is consistently higher in the Al-Mg-Fe alloy, and (ii) the sliding contribution is essentially independent of strain in the Al-Mg-Fe alloy, but it shows a significant decrease with increasing strain in the Al-Zn-Fe alloy. Sliding is inhibited by the presence of particles and its contributions to the total strain are low. This inhibition is attributed to the interaction between the grain boundary dislocations responsible for sliding and particles in the boundaries.

Computer simulation of the effects of anisotropic grain boundary energy on grain growth in 2-D (이방성 결정립 계면에너지의 2차원 결정립 성장에 미치는 효과에 대한 컴퓨터 모사)

  • Kim, Shin-Woo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.4
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    • pp.178-182
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    • 2012
  • The grain growth is very important because of its great influence on the various materials properties. Therefore, in this study, the effects of anisotropic grain boundary energy on grain growth in 2-D have been investigated with a large scale phase field simulation model on PC. A $2000{\times}2000$ grid system and the initial number of grains of about 73,000 were used in the computer simulation. The anisotropic ratio of grain boundary energy, ${\sigma}_{max}/{\sigma}_{min}$, has been varied from 1 to 3. As the anisotropy increased, the grain growth exponent, n, increased from 2.05 to 2.37. The grain size distribution showed a central plateau in the isotropic case, and was changed into no central plateau and the increasing population of very small grains in the anisotropic case, resulting from slowly disappearing grains. Finally, simulated microstructures were compared according to anisotropy.

Radiation induced grain boundary segregation in ferritic/martensitic steels

  • Xia, L.D.;Ji, Y.Z.;Liu, W.B.;Chen, H.;Yang, Z.G.;Zhang, C.;Chen, L.Q.
    • Nuclear Engineering and Technology
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    • v.52 no.1
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    • pp.148-154
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    • 2020
  • The radiation induced segregation of Cr at grain boundaries (GBs) in Ferritic/Martensitic steels was modeled assuming vacancy and interstitialcy diffusion mechanisms. In particular, the dependence of segregation on temperature and grain boundary misorientation angle was analyzed. It is found that Cr enriches at grain boundaries at low temperatures primarily through the interstitialcy mechanism while depletes at high temperatures predominantly through the vacancy mechanism. There is a crossover from Cr enrichment to depletion at an intermediate temperature where the Cr:Fe vacancy and interstitialcy diffusion coefficient ratios intersect. The bell-shape Cr enrichment response is attributed to the decreasing void sinks inside the grains as temperature rises. It is also shown that low angle grain boundaries (LAGBs) and special Σ coincidence-site lattice (CSL) grain boundaries exhibit suppressed radiation induced segregation (RIS) response while high angle grain boundaries (HAGBs) have high RIS segregation. This different behavior is attributed to the variations in dislocation density at different grain boundaries.