• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.266-266
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• 2010

마그네트론 스퍼터링을 이용하여 질소와 탄소를 함유한 티타늄 화합물을 합성하고, 조성 변화에 따른 색상 변화를 통해 티타늄 화합물로 구현할 수 있는 색상에 대해서 알아보았다. 스퍼터 타겟은 4"X1/4" 크기의 고순도(99.99%) 티타늄을 사용하였다. 시편은 알코올과 아세톤에서 각각 5분간 초음파 세척된 SUS304를 사용하여, 진공용기에 시편을 장착하고 압력을 $3{\times}10^{-6}\;Torr$까지 배기한 후, Ar 가스를 주입하여 진공도가 $2{\times}10^{-2}\;Torr$에 이르면 펄스 전원 공급 장치를 이용하여 800 V의 전압으로 1시간 동안 글로우 방전을 시켜 시편 청정을 실시하였다. 시편 청정이 끝나면 다시 $3{\times}10^{-6}\;Torr$까지 진공배기를 실시하고, Ar 가스를 진공용기 내로 공급하여 $1{\sim}3{\times}10^{-3}\;Torr$에서 스퍼터링을 실시하여 완충층으로 티타늄 박막을 코팅하였다. 티타늄 화합물은 티타늄을 스퍼터링 하면서 진공용기 내에 질소와 메탄가스를 적절한 비율로 공급함으로써 코팅하였다. 박막 증착 시 시편 온도는 $200^{\circ}C$, 타겟과의 거리는 12 cm를 유지하였으며, 시편을 회전시켜 코팅하였다. 티타늄 화합물의 두께와 미세구조, 조성 그리고 색상은 투과전자현미경(transmission electron microscope, TEM), 글로우 방전 분광기(glow discharge light spectroscope, GDLS), 및 색차계(spectrophotometer)를 사용하여 각각 분석하였다. TEM 분석결과 TiN의 박막 두께는 약 300 nm로 공극이 존재하지 않는 치밀한 다결정 구조를 나타내었고, TiCN은 약 600 nm로 TiN과 두 배의 두께 차이를 보였다. 이는 탄소의 공급원인 메탄가스의 주입으로 증착률이 증가한 것으로 판단된다. 또한 소량의 질소와 메탄가스의 유량 조절로 화합물의 조성을 변화시킬 수 있었으며, 이러한 조성 변화는 화합물의 색상변화로 나타났다. 따라서 본 연구에서 얻어진 결과를 외관 코팅 분야에 응용한다면 다양한 색상 구현과 외관의 경도, 내마모성, 내식성의 향상 등 많은 장점을 가질 것으로 판단된다.

• Journal of the Korean institute of surface engineering
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• v.52 no.4
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• pp.194-202
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• 2019

A systematic investigation was made on the influence of processing parameters such as gas composition and treatment temperature on the surface characteristics of hardened layers of low temperature plasma nitrided 316L Austenitic Stainless Steel. Various nitriding processes were conducted by changing temperature ($370^{\circ}C$ to $430^{\circ}C$) and changing $N_2$ percentage (10% to 25%) for 15 hours in the glow discharge environment of a gas mixture of $N_2$ and $H_2$ in a plasma nitriding system. In this process a constant pressure of 4 Torr was maintained. Increasing nitriding temperature from $370^{\circ}C$ to $430^{\circ}C$, increases the thickness of S phase layer and the surface hardness, and also makes an improvement in corrosion resistance, irrespective of nitrogen percent. On the other hand, increasing nitrogen percent from 10% to 25% at $430^{\circ}C$ decreases corrosion resistance although it increases the surface hardness and the thickness of S phase layer. Therefore, optimized condition was selected as nitriding temperature of $430^{\circ}C$ with 10% nitrogen, as at this condition, the treated sample showed better corrosion resistance. Moreover to further increase the thickness of S phase layer and surface hardness without compromising the corrosion behavior, further research was conducted by fixing the $N_2$ content at 10% with introducing various amount of $CH_4$ content from 0% to 5% in the nitriding atmosphere. The best treatment condition was determined as 10% $N_2$ and 5% $CH_4$ content at $430^{\circ}C$, where the thickness of S phase layer of about $17{\mu}m$ and a surface hardness of $980HV_{0.1}$ were obtained (before treatment $250HV_{0.1}$ hardness). This specimen also showed much higher pitting potential, i.e. better corrosion resistance, than specimens treated at different process conditions and the untreated one.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.106-109
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• 2022

The green-emitting Zn₂SiO₄:Mn²⁺ phosphor film was evaluated in a xenon excimer lamp. The phosphor film with 2 ㎛ thick was formed of monolithic structure on the inner side of quartz through a long-time annealing process of coated ZnO solution doped with Mn²⁺ ion and SiO₂ of quartz tube. The coated quartz was filled with 100 torr of xenon gas, and simultaneously both sides was melt and sealed. The xenon-field quartz tube was discharge by applying the voltage of 15 kV with a frequency of 26 kHz, and emitted the glow with dominant peak at 172 nm. The vacuum ultraviolet excited the inner-side coated Zn₂SiO₄:Mn²⁺ phosphor film, which emitted the pure and strong green light.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.30-37
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• 1989

The PIN type a-SiC:H/a-Si:H heterojunction solar cells were fabricated by using the rf glow discharge decomposition of $SiH_4$ mixed with $CH_4,B_2,H_6\;and\;PH_3.$ The efficiency of the solar cell of the $SnO_2/ITO$ was higher than that of ITO transparent oxide layer by 1.5%. The P layer was prepared with the thickness of $100{\AA}$ and $CH_4/SiH_4$ ration of 5. The I layer has been deposited on the P layer and it is not pure intrinsic but near N type. So $SiH_4$ mixed with $B_2H_6$ of 0.3ppm was used to change this N type nature to intrinsic having the thickness of 5000${\AA}$. And consecutively, the N layer was deposited with t ethickness of $400{\AA}$ using $SiH_4/PH_3$ mixtures. The solar cell demonstrated 0.94V of $V_{oc'}$ 14.6mA/cm of $J_{sc}$ and 58.2% of FF, resulting the efficiency of 8.0%. To minimize loss by the reflection of light, $MgF_2$ layer was coated on the lgass and the efficiency was improved by 0.5%. Therefore, the solar cell indicated overall efficiency of 8.5%.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.5-12
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• 1992

We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.433-433
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• 2012

As the requirement in patterning geometry continuously shrinks down, the termination of etch process at the exact time became crucial for the success in nano patterning technology. By virtue of real-time optical emission spectroscopy (OES), etch end point detection (EPD) technique continuously develops; however, it also faced with difficulty in low open ratio etching, typically in self aligned contact (SAC) and one cylinder contact (OCS), because of very small amount of optical emission from by-product gas species in the bulk plasma glow discharge. In developing etching process, one may observe that coupon test is being performed. It consumes costs and time for preparing the patterned sample wafers every test in priority, so the coupon wafer test instead of the whole patterned wafer is beneficial for testing and developing etch process condition. We also can observe that etch open area is varied with the number of coupons on a dummy wafer. However, this can be a misleading in OES study. If the coupon wafer test are monitored using OES, we can conjecture the endpoint by experienced method, but considering by data, the materials for residual area by being etched open area are needed to consider. In this research, we compare and analysis the OES data for coupon wafer test results for monitoring about the conditions that the areas except the patterns on the coupon wafers for real-time process monitoring. In this research, we compared two cases, first one is etching the coupon wafers attached on the carrier wafer that is covered by the photoresist, and other case is etching the coupon wafers on the chuck. For comparing the emission intensity, we chose the four chemical species (SiF2, N2, CO, CN), and for comparing the etched profile, measured by scanning electron microscope (SEM). In addition, we adopted the Dynamic Time Warping (DTW) algorithm for analyzing the chose OES data patterns, and analysis the covariance and coefficient for statistical method. After the result, coupon wafers are over-etched for without carrier wafer groups, while with carrier wafer groups are under-etched. And the CN emission intensity has significant difference compare with OES raw data. Based on these results, it necessary to reasonable analysis of the OES data to adopt the pre-data processing and algorithms, and the result will influence the reliability for relation of coupon wafer test and whole wafer test.

• Bulletin of the Korean Space Science Society
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• 2007.10a
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• pp.139-143
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• 2007

Electric propulsion has become a cost effective and sound engineering solution for many space applications. The success of SMART-1 and MUSES-C developed by European Space Agency (ESA) and Japan Aerospace Exploration Agency (JAXA) each proved that even small spacecraft could accomplish planetary mission with electric propulsion systems. A small electric propulsion system which is Hall effect thruster like SMART-1 is under development by SaTReC and GDPL (Glow Discharge Plasma Lab.) in KAIST for the next microsatellite, STSAT-3. To achieve optimized propulsion system, it is very necessary to understand plasma motions of Hall effect thruster. In this paper, we try to approach comprehensive plasma model with the particle simulation complementary to Particle In Cell (PIC) simulation. We think these two different approaches will help experimenters to optimize Hall effect thruster performances.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.222-227
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• 2008

In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the $BaTiO_3$ thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from $500-1000^{\circ}C$. XRD results showed that the highest crystal quality was obtained from the samples annealed at $600-700^{\circ}C$. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to $600^{\circ}C$; and 80 nm grains were obtained at $700^{\circ}C$. The surface roughness of the $BaTiO_3$ thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was $700^{\circ}C$. XPS results demonstrated that the binding energy of each element of the thin-film-type $BaTiO_3$ in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at $1000^{\circ}C$. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to $700^{\circ}C$. All of the results obtained in this study clearly demonstrate that an annealing temperature of $700^{\circ}C$ results in optimal structural properties of $BaTiO_3$ thin films in terms of their crystal quality, surface roughness, and composition.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.560-565
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• 2008

$(Pb_{0.98}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ (PLZT) thin films with $TiO_2$ buffer layers were deposited on Pt/Ti/$SiO_2$/Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films. And the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post annealing temperatures of $TiO_2$ buffer layers between a platinum bottom electrode and PLZT thin film. The ferroelectric properties of the PLZT thin films improved as increasing of the post annealing temperatures of $TiO_2$ layers, thereby reaching their maximum at $600^{\circ}C$.

• Clean Technology
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• v.16 no.3
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• pp.191-197
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• 2010

Repair reaction of plasma damaged porous methyl doped SiOCH films was carried out with silylation agents dissolved in supercritical carbon dioxide ($scCO_2$) at various reaction time, pressure, and temperature. While a decrease in the characteristic bands at $3150{\sim}3560cm^{-1}$ was detectable, the difference of methyl peaks was not identified apparently in the FT-IR spectra. The surface hydrophobicity was rapidly recovered by the silylation. In order to induce effective repair in bulk phase, the wafer was heat treated before reaction under vacuum or ambient condition. The contact angle was slightly increased after the treatment and completely recovered after the subsequent silylation. Methyl groups were decreased after the plasma damage, but their recovery was not identified apparently from the FT-IR, spectroscopic ellipsometry, and secondary ion mass spectroscopy analyses. Furthermore, Ti evaporator was performed in a vacuum chamber to evaluate the pore sealing effect. The GDS analysis revealed that the open pores in the plasma damaged films were efficiently sealed with the silylation in $scCO_2$.