• 한국재료학회지
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• 제24권12호
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• pp.689-693
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• 2014

Anti-reflection coating films have used to increase the transmittance of displays and enhance the efficiency of solar cells. Hydrophobic anti-reflection coating films were fabricated on a glass substrate by sol-gel method. To fabricate an anti-reflection film with a high transmittance, poly ethylene glycol (PEG) was added to tetraethyl orthosilicate (TEOS) solution. The content of PEG was changed from 1 to 4 wt% in order to control the morphology, thickness, and refractive index of the $SiO_2$ thin films. The reflectance and transmittance of both sides of the coated thin film fabricated with PEG 4 wt% solution were 0.3% and 99.4% at 500 nm wavelength. The refractive index and thickness of the thin film were n = 1.29 and d = 105 nm. Fluoro alkyl silane (FAS) was used for hydrophobic treatment on the surface of the anti-reflection thin film. The contact angle was increased from $13.2^{\circ}$ to $113.7^{\circ}$ after hydrophobic treatment.

• 한국재료학회지
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• 제28권4호
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• pp.235-240
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• 2018

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and $6.0{\times}10^{-6}$ torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100 W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/$TiO_2$/perovskite/HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of $88.5^{\circ}C$ with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of $135.4^{\circ}C$ with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8 % due to damage on the HTL. The two-step process offered an ECE higher than 6.25 % without HTL damage through a deposition temperature lower than $88^{\circ}C$ and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

• 한국세라믹학회지
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• 제48권4호
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• pp.328-333
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• 2011

The influence of Al-doped ZnO (AZO) thin films degraded under high temperature and damp heat on the performance deterioration of Cu(In,Ga)$Se_2$ (CIGS) solar cells was investigated. CIGS solar cells with AZO/CdS/CIGS/Mo structure were prepared on glass substrate and exposed to high temperature ($85^{\circ}C$) and damp heat ($85^{\circ}C$/85% RH) for 1000 h. As-prepared CIGS solar cells had 64.91% in fill factor (FF) and 12.04% in conversion efficiency. After exposed to high temperature, CIGS solar cell had 59.14% in FF and 9.78% in efficiency, while after exposed to damp heat, it had 54.00% in FF and 8.78% in efficiency. AZO thin films in the deteriorated CIGS solar cells showed increases in resistivity up to 3.1 times and 4.4 times compared to their initial resistivity after 1000 h of high temperature and damp heat exposure, respectively. These results can be explained by the decreases in carrier concentration and mobility due to diffusion or adsorption of oxygen and moisture in AZO thin films. It can be inferred that decreases in FF and conversion efficiency were caused by an increase in series resistance, which resulted from an increase in resistivity of AZO thin films degraded under high temperature and damp heat.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.131-131
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• 2003

The advent of photonic technologies in the field of communications and data transmission has been heavily increasing the demand in integrated optical (IO) circuits capable of accomplishing not only simple tasks like signal, but also more sophisticated functions like all-optical signal routing or active multiplexing/demultiplexing. In the last decade, sol-gel technology has been widely used to prepare optical materials. Sol-gel processes show many promises for the development of low-loss, high-performance glass integrated optical circuits. However, crack formation is likely to occur during heat treatment in thick gel films. In order to overcome the critical thickness limitation, the organic-modified silicate has been widely used. In this case coating matrices have been prepared from the organo-silanes of T structures, acidic catalyst and the as-prepared gel films have been heat-treated below 200$^{\circ}C$ to avoid the crack formation and the degradation of organic components. However, the films prepared in the acidic condition and the low heat temperature make the films contain high OH groups which is the major optical loss function. In this work, C$\sub$6/H$\sub$5/SiO$\sub$1.5/ films were prepared on silicon substrate by sol-gel method using base catalyst in a PTMS/NH$_4$OH/H$_2$O/C$_2$H$\sub$5/OH system. The sol showed spinable viscosity at 50 wt% of solid content, and neglectable viscosity change with time. The films were crack-free and transparent after curing at 450 $^{\circ}C$, and highly condensed to minimize OH content in C$\sub$6/H$\sub$5/SiO$\sub$1.5/ networks. The effects of heat treatment of the films are characterized on the critical thickness, the chemical composition and the refractive indices by means of SEM, FT-IR, TGA, prism coupler, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.44-44
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• 2008

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.665-668
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• 2008

Multi-layered thin films of $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$, Cr, Al were deposited on glass substrate by evaporation process. As high and low refractive index material, $Fe_2O_3$ and $Na_3AlF_6$ were selected and additionally Cu, Al and Cr were chosen as mid reflective layer respectively. Optical properties including reflectance were systematically studied depending on optical thickness of $Na_3AlF_6$ especially $0.25{\lambda}$ and $0.5{\lambda}$. In order to expect the experimental result, the simulation program, the Essential Macleod Program(EMP) was adopted and compared with the experimental data. Based on the results taken by spectrophotometer at viewing angle $45^{\circ}C$, the $Fe_2O_3/Na_3AlF_6/Fe_2O_3/Cu$ show the colour rage between red and orange in $0.25{\lambda}$ and green and pupple in $0.5{\lambda}$ respectively. When the Al was used as mid reflective layers in $Fe_2O_3/Na_3AlF_6/Fe_2O_3$ system, typical yellow colour and mixed colour between green and pupple were appeared in $0.25{\lambda}$ and $0.5{\lambda}$ of $Na_3AlF_6$ respectively. As compared the experimental result to simulation data, it was found out that the experimental data is relatively well matched with the EMP simulation data.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.