• 대한화학회지
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• 제34권6호
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• pp.622-628
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• 1990

장미 구성요소 중 꽃잎 부분을 $NH_3$ 감응센서에 고정시켜서 글루타민 조직센서를 제조하여 pH, 완충용액, 조직 양 및 여러 가지 방해물질의 영향과 전극의 수명 등에 관하여 조사하였다. 그 결과 37$^{\circ}C$에서 pH 7.8, 0.2M 인산완충용액을 사용하였을 때, $8.0 {\times} 10^{-4}$ ∼$5.0 {\times} 10^{-2}$ M 글루타민 직선범위와 52 mV/decade의 감응기울기를 나타내었다. 이 때 사용한 조직 양은 50 mg이었다. 본 센서는 선택성이 탁월한 것으로 나타났다. 이 센서를 장미의 다른 구성요소와 비교하였다. 실제 글루타민의 정량에 유용하게 사용될 것으로 나타났다.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.1-5
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• 2013

In this paper, we investigated the etching characteristics of the TaN thin films and the surface reaction of TaN thin films after etching process. The etching characteristics of the TaN thin films were carried out using inductively coupled plasma (ICP). The etch rate and the selectivity of TaN to $SiO_2$ and TaN to PR were measured by varying the gas mixing ratio, RF power, DC-bias voltage, and process pressure in CF-based plasma. The surface reaction of TaN thin films were determined by x-ray photoelectron spectroscopy (XPS).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.117-118
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• 2006

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20% and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a O2 addition of 2 sccm into the $BCl_3/(BCl_3+ Ar)$ of 20% plasma.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.15-21
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• 2009

High-order harmonic generation from a solid surface affected by the contrast of a laser pulse was studied using an oscillating mirror model. High-order harmonics generated from solid surfaces have unusual properties such as spectral redshift, and an intensity difference between even- and odd-order harmonics which is not reported for high-order harmonics generated by a gas medium. We confirmed that high-order harmonics from solid surfaces have selectivity of polarization as well as cut-off extension and the enhancement of conversion efficiency proportional to laser intensity. And the principle of operation and the characteristics of a plasma mirror system developed for achieving high contrast laser pulses to pursue the experimental realization of high-harmonic generation from solid surfaces are reported. Energy fluence on the plasma mirrors is tunable between $10\;J/cm^2$ and $1000\;J/cm^2$ and around 1000 shots are available before the plasma mirrors require replacement.

• Bulletin of the Korean Chemical Society
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• 제34권8호
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• pp.2399-2402
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• 2013

The catalytic pyrolysis of cellulose was carried out over SAPO-11 for the first time. Pyrolyzer-gas chromatography/mass spectroscopy was used for the in-situ analysis of the pyrolysis products. The acid sites of SAPO-11 converted most levoglucosan produced from the non-catalytic pyrolysis of cellulose to furans. In particular, the selectivity toward light furans, such as furfural, furan and 2-methyl furan, was high. When the catalyst/cellulose ratio was increased from 1/1 to 3/1 and 5/1, the increase in the quantity of acid sites led to the promotion of deoxygenation and the resultant increase of the contents of light furan compounds. Because furans can be used as basic feedstock materials, the augmentation of the economical value of bio-oil through the catalytic upgrading over SAPO-11 is considerable.

• Korean Chemical Engineering Research
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• 제56권2호
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• pp.269-274
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• 2018

All the $Ni-Co-Ce-ZrO_2$ mixed oxides are prepared by co-precipitations methods. Methanation of CO and $H_2$ reaction is screened tested over different fractions of cerium (2, 4, 7 and 12 wt.%) over $Ni-Co/ZrO_2$ bimetallic catalysts are investigated. The mixed oxides are characterized by XRD, CO-Chemisorption, TGA and screened methanation of CO and $H_2$ at $360^{\circ}C$ for 3000 min on stream at typical ratio $CO:H_2=1:1$. In $Ni-Co/CeZrO_2$ series 2 wt.% Ce loading catalyst shows most promising catalyst for $CH_4$ selectivity than $CO_2$, which directs more stability with less coke formation. The high activity is attributed to the better bimetallic synergy and the well-developed crystalline phases of NiO, $ZrO_2$ and $Ce-ZrO_2$. Other bimetallic mixed oxides NCoZ, $NCoC^{4-12}Z$ has faster deactivation with low methanation activity. Finally, 2 wt.% Ce loading catalyst was found to be optimal coke resistant catalyst.

• 한국연소학회지
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• 제10권4호
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• pp.24-32
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• 2005

Various types of plasma source applied in $CH_4$ decomposition process are compared. DBD by pulse and AC power, spark by pulse and AC power, rotating arc and hollow cathode plasma are chosen to be compared. The results show that $CH_4$ conversion per given unit power is relatively high in hollow cathode plasma and rotating arc that induces rather high temperature condition and that is why both thermal dehydration and plasma induced decomposition contribute for the overall process. In case of DBD wherein high temperature electron and low temperature gas molecule coexist, the process shows low conversion rate, for in rather low temperature condition the contribution of thermal dehydration is lowered. Selectivity of $C_2H_6$ and $C_2H_2$ is shown to be a good parameter of the relative contribution of plasma chemistry in the overall process. From the results we concluded that required condition of plasma source for a cost effective and high yield $CH_4$ decomposition is to have characteristics of both thermal plasma and non thermal plasma in which temperature is high above a certain threshold state for thermal dehydration and electron induced collision is maximized in the same breath.

• Environmental Engineering Research
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• 제10권1호
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• pp.38-44
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• 2005

Electro-thermal production of white phosphorus(WP, P4) generates substantial amount of highly toxic phossy water and sludges. Because of their high phosphorus contents and lack of reliable processing technology, large tonnages of these hazardous wastes have accumulated from current and past operations in the United States. In this study, two different methods for treatment of phosphorus sludge were investigated. These were bulk removal of WP by physical separation(froth flotation) and transformation of WP to oxyphosphorus compounds by air oxidation in the sludge medium. Kerosene, among other collectors, resulted in selective flotation of WP from the associated mineral gangue. Solvent action of kerosene occurring on the WP surface(by rendering WP particles hydrophobic) might produce the high selectivity of WP. The WP recovery in the froth was 79.3% from a sludge assaying 34.2% of WP. In the oxidation study, air gas was dispersed in the sludge medium by the rapid rotation of the impeller blades. The high level of sludge agitation intensity caused a fast completion of the oxidation reactions and it resulted in the high percentage conversion of WP to PO4-3 with PO3-3 making up almost all portion of oxyphosphorus compounds. The WP analysis on the treated sludge showed that supernatant solution and solid residue contained an average of 4.2 μg/L and 143 ppm respectively from the sludge containing about 26 g of WP. Further investigation will be required on operational factors to better understand the processes and achieve an optimum condition.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.