• Title/Summary/Keyword: gas laser

Search Result 718, Processing Time 0.04 seconds

FPCB Cutting Process using ns and ps Laser (나노초 및 피코초 레이저를 이용한 FPCB의 절단특성 분석)

  • Shin, Dong-Sig;Lee, Jae-Hoon;Sohn, Hyon-Kee;Paik, Byoung-Man
    • Laser Solutions
    • /
    • v.11 no.4
    • /
    • pp.29-34
    • /
    • 2008
  • Ultraviolet laser micromachining has increasingly been applied to the electronics industry where precision machining of high-density, multi-layer, and multi material components is in a strong demand. Due to the ever-decreasing size of electronic products such as cellular phones, MP3 players, digital cameras, etc., flexible printed circuit board (FPCB), multi-layered with polymers and metals, tends to be thicker. In present, multi-layered FPCBs are being mechanically cut with a punching die. The mechanical cutting of FPCBs causes such defects as burr on layer edges, cracks in terminals, delamination and chipping of layers. In this study, the laser cutting mechanism of FPCB was examined to solve problems related to surface debris and short-circuiting that can be caused by the photo-thermal effect. The laser cutting of PI and FCCL, which are base materials of FPCB, was carried out using a pico-second laser(355nm, 532nm) and nano-second UV laser with adjusting variables such as the average/peak power, scanning speed, cycles, gas and materials. Points which special attention should be paid are that a fast scanning speed, low repetition rate and high peak power are required for precision machining.

  • PDF

A Study on the mechanism of $SiO_2$ film deposition by Laser CVD (레이져 CVD에 의한 $SiO_2$막의 형성기구 모델링에 관한 연구)

  • Ryoo, Ji-Ho;So, Hwang-Young;Kim, Young-Hoon;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
    • /
    • 1995.07c
    • /
    • pp.1149-1151
    • /
    • 1995
  • In order to examine the deposition mechanism for $SiO_2$ by ArF(193nm) excimer Laser using $Si_2H_6$ and $N_2O$ gas mixture, deposition rate and refractive index were measured and creative modeling on film deposition was established by suggesting now precursor and film growing mechanism.

  • PDF