• Title/Summary/Keyword: gap filler material

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MIG-WELDING OF MAGNESIUM ALLOYS WITH PARTICULAR CONSIDERATION OF DROP DETACHMENT

  • Wohlfahrt, H.;Rethmeier, M.;Wiesner, S.
    • Proceedings of the KWS Conference
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    • 2002.10a
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    • pp.94-100
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    • 2002
  • During the last years, great progress has been made in the fields of welding power sources and filler materials for the MIG-welding of magnesium alloys. This advice resulted in a better welding process, md, therefore, in highly improved welding results. Furthermore the gap between short-circuiting- and spray-arc-trunsfer could be closed by the triggered short-circuiting- and the short-circuiting-arc with pulse overlay. A crucial contribution to the welding process is the energy input into the filler material. Many problems result from the physical properties of magnesium, for instance its narrow interval between melting point 600$^{\circ}C$ and vaporization point 1100$^{\circ}C$. The energy input into the filler material has to be regulated in such a way that the wire will melt but not vaporize. For th is reason, special characteristics of power sources hue been examined and optimized with the help of high-speed-photographs of the welding process with particular consideration of the drop detachment. An important improvement of the weld seam profile has been achieved by using filler material of only 1.2 mm in diameter. The experiments hue been made with 2.5 mm thick extruded profiles of AZ31 and AZ6l. The results of tensile testing showed strength values of 80 to 100% of the base metal. B ending angles up to 60$^{\circ}$ have been reached. The fatigue strength under reversed bending of the examined magnesium alloys after welding reaches 50% of the strength of the base metal. When the seam reinforcement is ground of the fatigue strength can be raised up to 75% of the base metal.

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Bondability of Different Electronic Materials by Micro Heat source (마이크로 열원에 의한 이종전자재료의 접합성)

  • 이철인;서용진;신영의;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1994.11a
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    • pp.206-209
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    • 1994
  • This paper has been researched bondability of electronic devices, such as lead frame and thick film of Ag/Pd on an alumina substrate by different heat sources. To obtain the bonds with high quality, it is very important to control both the thermal distribution of the bonds and it stability, because electronics components is consist of different materials. Therefore, this paper clarifies not only heat mechanism of micro parallel gap resistance bonding method and pulse heat tip bonding method but also investigates selection of heat sources with micro-electronic materials for bonding. Finally, it is realzed fluxless bonding process with filler metal such as plating layers.

Hot Wire Laser Welding of Multilayer for Narrow Gap - Analysis of Wire Melting/Transfer and Arc Formation Phenomenon by High Speed Imaging - (내로우 갭 적용을 위한 핫와이어 송급 레이저용접 - 고속촬영을 통한 와이어 용융/이행 현상과 아크 포메이션 분석 -)

  • Kim, Kyounghak;Bang, Hansur;Bang, Heeseon;Kaplan, Alexander F.H.;Nasstrom, Jonas;Frostevarg, Jan
    • Journal of Welding and Joining
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    • v.34 no.5
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    • pp.26-32
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    • 2016
  • In this study, Hot-wire laser welding (HWLW) without keyhole which deposits filler material by feeding hot wire into the process zone has been performed to increase process performance. From the analysis of High Speed Imaging (HSI), for higher voltage, the process is prone to arc formation and drop transfer, which is disagreeable transfer mode. It is necessary that arc formation and drop (globular) transfer should be avoided by lower voltage. Therefore, continuous wire melting and transfer mode is preferred when adopting this process. The HWLW technique has high potential in terms of performance, precision, robustness and controllability for thick section of narrow gap.

R&D Review on the Gap Fill of an Engineered Barrier for an HLW Repository (고준위폐기물처분장 공학적방벽의 갭채움재 기술현황)

  • Lee, Jae Owan;Choi, Young-Chul;Kim, Jin-Seop;Choi, Heui-Joo
    • Tunnel and Underground Space
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    • v.24 no.6
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    • pp.405-417
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    • 2014
  • In a high-level waste repository, the gap fill of the engineered barrier is an important component that influences the performance of the buffer and backfill. This paper reviewed the overseas status of R&D on the gap fill used engineered barriers, through which the concept of the gap fill, manufacturing techniques, pellet-molding characteristics, and emplacement techniques were summarized. The concept of a gap fill differs for each country depending on its disposal type and concept. Bentonite has been considered a major material of a gap fill, and clay as an inert filler. Gap fill was used in the form of pellets, granules, or a pellet-granule blend. Pellets are manufactured through one of the following techniques: static compaction, roller compression, or extrusion-cutting. Among these techniques, countries have focused on developing advanced technologies of roller compression and extrusion-cutting techniques for industrial pellet production. The dry density and integrity of the pellet are sensitive to water content, constituent material, manufacturing technique, and pellet size, and are less sensitive to the pressure applied during the manufacturing. For the emplacement of the gap fill, pouring, pouring and tamping, and pouring with vibration techniques were used in the buffer gap of the vertical deposition hole; blowing through the use of shotcrete technology and auger placement and compaction techniques have been used in the gap of horizontal deposition hole and tunnel. However, these emplacement techniques are still technically at the beginning stage, and thus additional research and development are expected to be needed.

Dissolution Phenomenon of the Base Metal during TLP Bonding Using the Modified Base Metal Powder and Ni Base Filler Metal Powder (유사 조성의 모재분말과 Ni기 삽입금속 혼합분말을 사용한 천이액상확산 접합 시 모재의 용해현상)

  • Song, Woo-Young;Ye, Chang-Ho;Kang, Chung-Yun
    • Journal of Welding and Joining
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    • v.25 no.3
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    • pp.64-71
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    • 2007
  • The dissolution phenomenon of the solid phase powder and base metal by liquid phase insert metal during Transient Liquid Phase bonding using the mixed powder composed of the modified GTD111(base metal) powder and the GNi3 (Ni-l4Cr-9.5Co-3.5Al-2.5B) powder was investigated. In case of the mixed powder contains modified GTD111 powder 50wt%, all of the powder was melted by liquid phase at 1423K. At the temperature between solidus and liquidus of GNi3, liquid phase penetrated into the boundary of the modified GTD111 powder and solid particle separated from powder was melted easily because area of reaction was increased. With increasing mixing ratio of the modified GTD111, it needed the higher temperature to melt all of the modified GTD111 powder. During Transient Liquid Phase bonding using the mixed powder composed of the modified GTD111 50wt% and GNi3 50wt% as insert metal, width of the bonded interlayer was increased with increasing bonding temperature by reaction of the base metal and liquid phase in insert metal. Dissolution of the base metal and modified powder by liquid phase progressed all together and after all of the powder was melted nearly, the dissolution of the base metal occurred quickly.

Alloy Design and Powder Manufacturing of Al-Cu-Si alloy for Low-Temperature Aluminum Brazing (저온 알루미늄 브레이징용 Al-Cu-Si-Sn 합금 설계 및 분말 제조)

  • Heeyeon Kim;Chun Woong Park;Won Hee Lee;Young Do Kim
    • Journal of Powder Materials
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    • v.30 no.4
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    • pp.339-345
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    • 2023
  • This study investigates the melting point and brazing properties of the aluminum (Al)-copper (Cu)-silicon (Si)-tin (Sn) alloy fabricated for low-temperature brazing based on the alloy design. Specifically, the Al-20Cu-10Si-Sn alloy is examined and confirmed to possess a melting point of approximately 520℃. Analysis of the melting point of the alloy based on composition reveals that the melting temperature tends to decrease with increasing Cu and Si content, along with a corresponding decrease as the Sn content rises. This study verifies that the Al-20Cu-10Si-5Sn alloy exhibits high liquidity and favorable mechanical properties for brazing through the joint gap filling test and Vickers hardness measurements. Additionally, a powder fabricated using the Al-20Cu-10Si-5Sn alloy demonstrates a melting point of around 515℃ following melting point analysis. Consequently, it is deemed highly suitable for use as a low-temperature Al brazing material.

Junction of Porous SiC Semiconductor and Ag Alloy (다공질 SiC 반도체와 Ag계 합금의 접합)

  • Pai, Chul-Hoon
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.3
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    • pp.576-583
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    • 2018
  • Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.