• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.351-354
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• 2002

The new enhanced method of temperature control need not any reference temperature, the system itself can find the melting temperature of gallium as a reference point by dithering input heat flux. If gallium is in melting state, the latent heat of fusion works, so gallium temperature does not change on dithering input heat flux. Also, the control method can determine the state of gallium; solid, liquid, or melting state by investigating the temperature in gallium. We apply this new temperature stabilization method to stabilize a Fabry-Perot cavity, which serves as a ultimate length measurement technique. We achieved 1 mK-temperature stability and 1.5426 nm/ 95 mm-length stability over 10 hours.

• Journal of Electrochemical Science and Technology
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• 제4권1호
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• pp.1-18
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• 2013

Gallium is an important element in the production of a variety of compound semiconductors for optoelectronic devices. Gallium has a low melting point and is easily oxidized to give oxides of different compositions that depend on the conditions of solutions containing Ga. Gallium electrode reaction is highly irreversible in acidic media at the dropping mercury electrode. The passive film on a gallium surface is formed during anodic oxidation of gallium metal in alkaline media. Besides, some results in published reports have not been consistent and reproducible. An increase in the demand of intermetallic compounds and semiconductors containing gallium gives rise to studies on electrosynthesis of them and an increase of gallium concentration in the environment with various application of gallium causes the development of electroanalysis tools of Ga. It is required to understand the electrochemistry of Ga and to predict the electrochemical behavior of Ga to meet these needs. Any review papers related to the electrochemistry of gallium have not been published since 1978, when the review on the subject was published by Popova et al. In this study, the redox behavior, anodic oxidation, and electrodeposition of gallium, and trace determination of gallium by stripping voltammetries will be reviewed.

• 센서학회지
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• 제18권1호
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• pp.86-94
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• 2009

Temperature measurement capability was inter-compared using the transfer standard platinum resistance thermometers(SPRT) among four laboratories of KRISS. The transfer SPRTs were primarily calibrated at the triple point of water and Ga melting point, then used at inter-comparison experiment. Temperature difference of calibration value between temperature laboratory and length laboratory at $20^{\circ}C$ was -0.7 mK and +2.4 mK at density laboratory. Temperature measured near $20^{\circ}C$, $25^{\circ}C$ and $30^{\circ}C$ at fluid flow laboratory was deviated by $34.2{\sim}80.4\;mK$ from the calibration values of the transfer SPRT. Ga melting points was inter-compared among three laboratories, and the difference of Ga melting points against the standard Ga melting point of temperature laboratory were $0.03{\sim}0.54\;mK$ at length laboratory and 0.02 mK at density laboratory.

• 센서학회지
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• 제13권6호
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• pp.411-416
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• 2004

In the international temperature scale of 1990 (ITS-90), standard platinum resistance thermometer (SPRT) is a defining standard thermometer used in the temperature range from 13.8033 K to $961^{\circ}C$. Uncertainty of SPRT is about several mK and uncertainty of defining fixed points of the ITS-90 which is used for calibrating SPRT is about several tenth of mK. Above $0^{\circ}C$. the defining fixed points are gallium melting point and indium, tin, zinc, aluminium and silver freezing points which are all realized using an electric furnace or a liquid bath. To realize freezing point of tin ($231.928^{\circ}C$) and zinc ($419.527^{\cir}C$), two 3-zone furnaces which have 3 electric heaters were manufactured. Temperature gradient of the constructed furnaces were tested. Uncertainty caused by temperature gradient of furnace and immersion effect of SPRT in the sealed-type freezing point cells were evaluated 0.038 mK for tin freezing point and 0.036 mK for zinc freezing point.

• 방사성폐기물학회지
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• 제19권2호
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• pp.161-176
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• 2021

In this study, the electrochemical behavior of Sm on the binary liquid Al-Ga cathode in the LiCl-KCl molten salt system is investigated. First, the co-reduction process of Sm(III)-Al(III), Sm(III)-Ga(III), and Sm(III)-Ga(III)-Al(III) on the W electrode (inert) were studied using cyclic voltammetry (CV), square-wave voltammetry (SWV) and open circuit potential (OCP) methods, respectively. It was identified that Sm(III) can be co-reduced with Al(III) or Ga(III) to form Al_zSm_y or Ga_xSm_y intermetallic compounds. Subsequently, the under-potential deposition of Sm(III) at the Al, Ga, and Al-Ga active cathode was performed to confirm the formation of Sm-based intermetallic compounds. The X-ray diffraction (XRD) and scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS) analyses indicated that Ga₃Sm and Ga₆Sm intermetallic compounds were formed on the Mo grid electrode (inert) during the potentiostatic electrolysis in LiCl-KCl-SmCl₃-AlCl₃-GaCl₃ melt, while only Ga₆Sm intermetallic compound was generated on the Al-Ga alloy electrode during the galvanostatic electrolysis in LiCl-KCl-SmCl₃ melt. The electrolysis results revealed that the interaction between Sm and Ga was predominant in the Al-Ga alloy electrode, with Al only acting as an additive to lower the melting point.

• 한국결정성장학회지
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• 제34권2호
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• pp.61-65
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• 2024

HVPE(Hydride vapor phase epitaxy) 공법은 기체상의 원료를 사용하여 박막 또는 단결정을 제조하는 공법이다. 화학적 기상증착법의 원리를 적용하여 난용융성 또는 고융점의 물질의 단결정을 성장할 수 있는 공법으로서, 질화갈륨(GaN) 단결정을 얻을 수 있는 공법 중 하나이다. 최근 동 공법을 이용하여 질화알루미늄(AlN) 단결정을 성장하고자 하는 연구가 많이 수행되어져 왔으나, 아직은 좋은 결과를 얻지 못하고 있다. 본 연구에서는 AlN 단결정을 HVPE 공법으로 성장하고자 하였다. 성장 공정에서 질소를 운송가스(Carrior gas)로 사용하였으며, 질소(N2)의 양의 변화에 따른 성장 결과를 고찰하여 보았다. 질소의 양이 증가함에 따른 성장 결정의 변화 양상을 확인할 수 있었다. 성장된 AlN 단결정의 형상을 광학 현미경을 사용하여 관찰하였고, 이중결정 X선 회절 분석(DCXRD, Double crystal X-ray diffractometry)을 이용하여, AlN 결정의 생성을 확인함과 동시에 성장된 단결정의 결정성도 알아보았다.