• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.351-354
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• 2002

The new enhanced method of temperature control need not any reference temperature, the system itself can find the melting temperature of gallium as a reference point by dithering input heat flux. If gallium is in melting state, the latent heat of fusion works, so gallium temperature does not change on dithering input heat flux. Also, the control method can determine the state of gallium; solid, liquid, or melting state by investigating the temperature in gallium. We apply this new temperature stabilization method to stabilize a Fabry-Perot cavity, which serves as a ultimate length measurement technique. We achieved 1 mK-temperature stability and 1.5426 nm/ 95 mm-length stability over 10 hours.

• Journal of Electrochemical Science and Technology
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• v.4 no.1
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• pp.1-18
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• 2013

Gallium is an important element in the production of a variety of compound semiconductors for optoelectronic devices. Gallium has a low melting point and is easily oxidized to give oxides of different compositions that depend on the conditions of solutions containing Ga. Gallium electrode reaction is highly irreversible in acidic media at the dropping mercury electrode. The passive film on a gallium surface is formed during anodic oxidation of gallium metal in alkaline media. Besides, some results in published reports have not been consistent and reproducible. An increase in the demand of intermetallic compounds and semiconductors containing gallium gives rise to studies on electrosynthesis of them and an increase of gallium concentration in the environment with various application of gallium causes the development of electroanalysis tools of Ga. It is required to understand the electrochemistry of Ga and to predict the electrochemical behavior of Ga to meet these needs. Any review papers related to the electrochemistry of gallium have not been published since 1978, when the review on the subject was published by Popova et al. In this study, the redox behavior, anodic oxidation, and electrodeposition of gallium, and trace determination of gallium by stripping voltammetries will be reviewed.

• Journal of Sensor Science and Technology
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• v.18 no.1
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• pp.86-94
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• 2009

Temperature measurement capability was inter-compared using the transfer standard platinum resistance thermometers(SPRT) among four laboratories of KRISS. The transfer SPRTs were primarily calibrated at the triple point of water and Ga melting point, then used at inter-comparison experiment. Temperature difference of calibration value between temperature laboratory and length laboratory at $20^{\circ}C$ was -0.7 mK and +2.4 mK at density laboratory. Temperature measured near $20^{\circ}C$, $25^{\circ}C$ and $30^{\circ}C$ at fluid flow laboratory was deviated by $34.2{\sim}80.4\;mK$ from the calibration values of the transfer SPRT. Ga melting points was inter-compared among three laboratories, and the difference of Ga melting points against the standard Ga melting point of temperature laboratory were $0.03{\sim}0.54\;mK$ at length laboratory and 0.02 mK at density laboratory.

• Journal of Sensor Science and Technology
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• v.13 no.6
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• pp.411-416
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• 2004

In the international temperature scale of 1990 (ITS-90), standard platinum resistance thermometer (SPRT) is a defining standard thermometer used in the temperature range from 13.8033 K to $961^{\circ}C$. Uncertainty of SPRT is about several mK and uncertainty of defining fixed points of the ITS-90 which is used for calibrating SPRT is about several tenth of mK. Above $0^{\circ}C$. the defining fixed points are gallium melting point and indium, tin, zinc, aluminium and silver freezing points which are all realized using an electric furnace or a liquid bath. To realize freezing point of tin ($231.928^{\circ}C$) and zinc ($419.527^{\cir}C$), two 3-zone furnaces which have 3 electric heaters were manufactured. Temperature gradient of the constructed furnaces were tested. Uncertainty caused by temperature gradient of furnace and immersion effect of SPRT in the sealed-type freezing point cells were evaluated 0.038 mK for tin freezing point and 0.036 mK for zinc freezing point.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.19 no.2
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• pp.161-176
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• 2021

In this study, the electrochemical behavior of Sm on the binary liquid Al-Ga cathode in the LiCl-KCl molten salt system is investigated. First, the co-reduction process of Sm(III)-Al(III), Sm(III)-Ga(III), and Sm(III)-Ga(III)-Al(III) on the W electrode (inert) were studied using cyclic voltammetry (CV), square-wave voltammetry (SWV) and open circuit potential (OCP) methods, respectively. It was identified that Sm(III) can be co-reduced with Al(III) or Ga(III) to form Al_zSm_y or Ga_xSm_y intermetallic compounds. Subsequently, the under-potential deposition of Sm(III) at the Al, Ga, and Al-Ga active cathode was performed to confirm the formation of Sm-based intermetallic compounds. The X-ray diffraction (XRD) and scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS) analyses indicated that Ga₃Sm and Ga₆Sm intermetallic compounds were formed on the Mo grid electrode (inert) during the potentiostatic electrolysis in LiCl-KCl-SmCl₃-AlCl₃-GaCl₃ melt, while only Ga₆Sm intermetallic compound was generated on the Al-Ga alloy electrode during the galvanostatic electrolysis in LiCl-KCl-SmCl₃ melt. The electrolysis results revealed that the interaction between Sm and Ga was predominant in the Al-Ga alloy electrode, with Al only acting as an additive to lower the melting point.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.2
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• pp.61-65
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• 2024

HVPE (Hydride vapor phase epitaxy) is a method of manufacturing thin films or single crystals using gaseous raw materials. This is a method that applies the principles of chemical vapor deposition to grow a single crystal of a material with low meltability or high melting point, and is one of the methods that can obtain a gallium nitride (GaN) single crystal. Recently, much research has been conducted to grow aluminum nitride (AlN) single crystals using this method, but good results have not yet been obtained. In this study, we attempted to grow AlN single crystals using the HVPE method. Nitrogen was used as a carrier gas in the growth process, and the growth results according to changes in the amount of nitrogen (N₂) were examined. Changes in growth crystals as the amount of nitrogen increased were confirmed. The shape of the grown AlN single crystal was observed using an optical microscope, and the rocking curve was measured using double crystal X-ray diffractometry (DCXRD) to confirm the creation of the AlN crystal. The crystallinity of single crystals was also investigated.