• Tribology and Lubricants
• /
• v.34 no.6
• /
• pp.209-216
• /
• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2003.06a
• /
• pp.1836-1839
• /
• 2003

This paper describes the surface polishing characteristics of a flat and free surface ferromagnetic substance(SM45C) that magnetic abrasive polishing processed. The effects of the various working factors on the surface roughness are clarified by experiments respectively, such as magnetic flux density. rotation speed of magnetic head. working gap, feed rate of workpiece. diameter of magnetic abrasives. and shape of workpiece. On the basis of these experiments, the polishing mechanism is discussed and the characteristics of the polishing process are described. In addition, it is found experimentally that die ＆ mold surfaces are also polished precisely by this process

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.36 no.3
• /
• pp.259-264
• /
• 2012

Automatic magnetic abrasive polishing (MAP), which can be applied after machining of a mold on a machine tool without unloading, is very effective for finishing a free-form surface such as a complicated injection mold. This study aimed to improve the efficiency of MAP of a non-ferrous mold surface. The magnetic array table and control of the electromagnet polarity were applied in the MAP of a free-form surface. In this study, first, the magnetic flux density on the mold surface was simulated to determine the optimal conditions for the polarity array. Then, the MAP efficiency for polishing a non-ferrous mold surface was estimated in terms of the change in the radius of curvature and the magnetic flux density. The most improved surface roughness was observed not only in the upward tool path but also in the working area of larger magnetic flux density.

• Journal of the Korean Society for Precision Engineering
• /
• v.25 no.9
• /
• pp.32-37
• /
• 2008

Freestanding hydride vapor phase epitaxy grown GaN(Gallium Nitride) substrates subjected to various polishing methods were characterized for their surface and subsurface conditions, Although CMP(Chemical Mechanical Polishing) is one of the best approaches for reducing scratches and subsurface damages, the removal rate of Ga-polar surface in CMP is insignificant($0.1{\sim}0.3{\mu}m$/hr) as compared with that of N-polar surface, Therefore, conventional MP(Mechanical Polishing) is commonly used in the GaN substrate fabrication process, MP of (0001) surface of GaN has been demonstrated using diamond slurries with different abrasive sizes, Diamond abrasives of size ranging from 30nm to 100nm were dispersed in ethylene glycol solutions and mineral oil solutions, respectively. Significant change in the surface roughness ($R_a$ 0.15nm) and scratch-free surface were obtained by diamond slurry of 30nm in mean abrasive size dispersed in mineral oil solutions. However, MP process introduced subsurface damages confirmed by TEM (Transmission Electronic Microscope) and PL(Photo-Luminescence) analysis.

• Journal of the Korean Society for Precision Engineering
• /
• v.19 no.10
• /
• pp.212-220
• /
• 2002

The finishing process for die and mold manufacturing is very important because it influences the final quality of products. Injection molds need higher quality surface than general purpose dies and molds. Conventional polishing can not make mold surface down to nanometer roughness efficiently because of their loading and glazing. This paper focused on the development of fixed abrasive pad using water swelling mechanism of polymer binder network. Self-conditioning was recognized as the long term polishing stabilization tool without any loading or glazing because water makes fixed abrasives free by swelling of the pad. Consequently, stable nano-polishing process has been applied on the injection mold, from the experimental results with polished surface roughness of Ra 15.1nm on STD-11 die steel.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2001.04a
• /
• pp.1068-1071
• /
• 2001

Recently, the minimum line width shows a tendancy to decrease and the multi-level to increase in semiconductor. Therefore, a planarization technique is needed, which chemical polishing(CMP) is considered as one of the most important process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as microscratches, abrasive contaminations, and non-uniformity of polished wafer edges. Spin Etching can improve the defects of CMP. It uses abrasive-free chemical solution instead of slurry. Wafer rotates and chemical solution is simultaneously dispensed on a whole surface of the wafer. Thereby chemical reaction is occurred on the surface of wafer, material is removed. On this study, TEOS film is removed by CMP and Spin Etching, the results are estimated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU).

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 1997.10a
• /
• pp.935-938
• /
• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Proceedings of the KACD Conference
• /
• 2001.11a
• /
• pp.576.2-576
• /
• 2001

The purpose of this study was to evaluate the effect of dentinal sclerosis and tubular orientation on Class V restoration bonded with three dentin bonding agents using confocal laser scanning microscope(CLSM). Class V cavities were prepared from freshly extracted caries-free human teeth. thirty of these cavities were divided into two groups based upon the status of class V cavities: Group 1, cervical abrasive lesions without preparation; Group 2, artificially-prepared wedge-shaped cavities.(omitted)

• Journal of Korean Tunnelling and Underground Space Association
• /
• v.24 no.5
• /
• pp.395-409
• /
• 2022

To overcome the limitation of conventional rock excavation methods, the excavation with abrasive waterjet has been actively developed. The abrasive waterjet excavation method has the effect of reducing blasting vibration and enhancing the excavation efficiency by forming a continuous free surface on the rock. However, the waterjet cutting performance varies with rock fracturing characteristics. Thus, it is necessary to analyze the cutting performance for various rocks in order to effectively utilize the waterjet excavation. In this study, cutting experiments with the high pressure waterjet system were performed for basalt and granite specimens. Water pressure, standoff distance, and traverse speed were determined as effective parameters for the abrasive waterjet cutting. The cutting depth and width of basalt specimens were analyzed to compare with granite results. The averaged cutting depth of basalt was shown in 41% deeper than granite; in addition, the averaged cutting width of basalt was formed by 18.5% narrower than granite. The results of this study are expected to be useful basic data for applying rock excavation site with low strength and high porosity such as basalt.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.78-78
• /
• 2007

In semiconductor devices, Cu has been used for the formation of multilevel metal interconnects by the damascene technique. Also lower dielectric constant materials is needed for the below 65 nm technology node. However, the low-k materials has porous structure and they can be easily damaged by high down pressure during conventional CMP. Also, Cu surface are vulnerable to have surface scratches by abrasive particles in CMP slurry. In order to overcome these technical difficulties in CMP, electro-chemical mechanical planarization (ECMP) has been introduced. ECMP uses abrasive free electrolyte, soft pad and low down-force. Especially, electrolyte is an important process factor in ECMP. The purpose of this study was to characterize KOH and $KNO_3$ based electrolytes on electro-chemical mechanical. planarization. Also, the effect of additives such as an organic acid and oxidizer on ECMP behavior was investigated. The removal rate and static etch rate were measured to evaluate the effect of electro chemical reaction.