• 제목/요약/키워드: floating body MOSFET

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SOI (Silicon-on-Insulator) 기반의 비휘발성 메모리 소자의 부분공핍 및 완전공핍 상태에서의 프로그램 효율 (Program Efficiency of Nonvolatile Memory Device Based on SOI(Silicon-on-Insulator) under Partial and Full Depletion Conditions)

  • 조성재;박일한;이정훈;손영환;이종덕;신형철;박병국
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.395-396
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    • 2008

  • There is difficulty in predicting the program efficiency of NOR type nonvolatile memory device adopting channel hot electron injection (CHEI) as program operation mechanism accurately since MOSFET on SOI has floating body. In this study, the dependence of program efficiency for SOI nonvolatile memory device of 200 nm channel length on SOI depletion conditions, partial depletion and full depletion, was quantitatively investigated with the aid of numerical device simulation [1].

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