• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.682-685
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• 2013

We have fabricated blue phosphorescent organic light-emitting devices (OLEDs) on a plastic substrate. The solution coated poly (9-vinylcarbazole) (PVK) host doped with Bis (3,5-difluoro-2-(2-pyridyl)phenyl_(2-carboxypyridyl)irdium(III) (FIrPic) guest molecules was used as an hole transporting emission layer. The device structure was ITO/PVK:FIrpic (50 nm, xwt%)/TAZ 50 nm)/LiF (0.5 nm)/Al (100 nm). The concentration of FIrpic molecule was varied from 1 wt% to 10 wt%. The OLED on plastic substrate exhibited maximum current efficiency of 18 cd/A with 5 wt% FIrpic molecules were doped into the PVK layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.163-163
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• 2012

차세대 모바일용 전자디스플레이로 각광받고 있는 FOLED (flexible organic light emitting display)의 연구에서 display의 신뢰성과 수명은 매우 중요한 연구 테마이다. OLED의 수명단축에 영향을 미치는 요소는 수분에 의한 열화가 가장 치명적이다. Barrier layer를 통한 수분의 주요 침투경로는 pin-hole과 void 등과 같은 defect에 의한 것으로 보인다. 수분의 침투 경로를 제어하는 OLED용 barrier layer의 요구조건은 WVTR (water vapor transmission rate)이 $10^{-6}g/m^2{\cdot}day$ 이하로 낮아야 한다. Barrier layer가 가져야 할 핵심적인 조건은 유연성을 가지면서 동시에 WVTR 값이 매우 낮아야 하는데, 아직까지 이를 만족하는 barrier layer의 개발은 아직 덜된 실정이다. 본 연구에서는 PET (polyethylene terephthalate) 기판에 sputtering법으로 barrier layer를 제조하였다. 증착에 이용한 타겟은 두가지 종류인 Al과 $Al_2O_3$를 사용하였으며, 다층박막으로 제조하였다. 제조된 barrier layer의 수분침투 특성은 WVTR의 측정으로, 유연성의 평가는 in-situ fatigue test를 수행하여 측정하였다. 종합적인 특성 평가를 위하여 SEM과 AFM (atomic force microscope) 관찰도 하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.274-274
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• 2013

We fabricate encapsulation-layer of OLED panel from organic-inorganic hybrid thin film by atomic layer deposition (ALD) molecular layer deposition (MLD) using Al2O3 as ALD process and Adipoyl Chloride (AC) and 1,4-Butanediamine as MLD process. Ellipsometry was employed to verify self-limiting reaction of MLD. Linear relationship between number of cycle and thickness was obtained. By such investigation, we found that desirable organic thin film fabrication is possible by MLD surface reaction in monolayer scale. Purging was carried out after dosing of each precursor to eliminate physically adsorbed precursor with surface. We also confirmed roughness of the organic thin film by atomic force microscopy (AFM). We deposit AC and 1,4-Butanediamine at $70^{\circ}C$ and investigated surface roughness as a function of increasing thickness of organic thin film. We confirmed precursor's functional group by IR spectrum. We calculated WVTR of organic-inorganic hybrid super-lattice epitaxial layer using Ca test. WVTR indicates super-lattice film can be possibly use as encapsulation in flexible devices.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.77-81
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• 2020

Commercialization of flexible OLED displays, such as rollable and foldable displays, has attracted tremendous interest in next-generation display markets. However, during bending deformation, cracking and delamination of thin films in the flexible display panels are the critical bottleneck for the commercialization. Therefore, measuring mechanical properties of the fragile thin films in the flexible display panels is essential to prevent mechanical failures of the devices. In this study, tensile properties of the metal and ceramic nano-thin films were quantitatively measured by using a direct tensile testing method on the water surface. Elastic modulus, tensile strength, and elongation of the sputtered Mo, MoTi thin films, and PECVD deposited SiN_x thin films were successfully measured. As a result, the tensile properties were varied depending on the deposition conditions and the film thickness. The measured tensile property values can be applied to stress analysis modeling for mechanically robust flexible displays.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.431-431
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• 2013

Flexible Organic Light Emitting Diode (OLED) displays are required for future devices. It is possible that plastic substrates are instead of glass substrates. But the plastic substrates are permeable to moisture and oxygen. This weak point can cause the degradation of fabricated flexible devices; therefore, encapsulation process for flexible substrate is needed to protect organic devices from moisture and oxygen. Y.G. Lee et al.(2009) [1] reported organic and inorganic multilayer structure as an encapsulation barrier for enhanced reliability and life-time.Flowable Oxide process is a low-temperature process which shows the excellent gap-fill characteristics and high deposition rate. Besides, planarization is expected by covering dust smoothly on the substrate surface. So, in this research, Bi-layer structured is used for encapsulation: Flowable Oxide Thin film by PECVD process and Al2O3 thin film by ALD process. The samples were analyzed by water vapor transmission rate (WVTR) using the Calcium test and film cross section images were obtained by FE-SEM.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.77-78
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• 2006

최근 flexible OLED의 구동에 사용하기 위한 유기박막트랜지스터(Organic Thin Film Transistor, OTFT)의 연구에서는 용매에 용해되어 spin coating이 가능한 재료의 개발에 관심을 두고 있다. 현재 pentacene으로는 아직 spin coating으로 제작할 수 있는 상용화된 제품이 없고 spin coating이 가능한 활성층 물질(active material)로 P3HT가 쓰이고 있다. 본 연구에서는 용해 가능한 P3HT 활성층 물질과 여러 종류의 용해 가능한 게이트 절연물(gate insulator, Gl)을 사용하여 안정된 소자를 구현할 수 있는 공정을 개발하는 목적으로 metal-insulator-semironductor(MIS) 소자를 제작하여 C-V 특성을 측정하고 분석하였다. 먼저 7mm${\times}$7mm 크기의 pyrex glass 시편 위에 바닥 전극으로 $1600{\AA}$ Au을 증착하고 spin coating 방식을 이용하여 PVP, PVA, PVK, BCB, Pl의 5종류의 게이트 절연층을 각각 형성하였고 그 위에 같은 방법으로 P3HT를 코팅하였다. P3HT 코팅 시 bake 공정의 유무와 spin rpm의 변화에 따른 P3HT의 두께를 측정하였다. Gl의 종류별로 주파수에 따른 capatltancc를 측정하여 비교, 분석하였다. C-V 측정 결과 PVP, PVA, PVK, BCB, Pl의 단위 면적당 capacitance 값은 각각 1.06, 2.73, 2.94, 3.43, $2.78nF/cm^2$로 측정되었다. Threshold voltage, $V_{th}$는 각각 -0.4, -0.7, -1.6, -0.1, -0.2V를 나타냈다. 주파수에 따른 capacitance 변화율을 측정한 결과 Gl 물질 모두 주파수가 높을수록 capacitance가 점점 감소하는 경향을 보였으나 1${\sim}$2nF 이내의 범위에서 작은 변화율만 나타냈다. P3HT의 두께와 bake 온도를 변화시켜 C-V 값을 측정한 결과 차이는 없었다. FE-SEM으로 관찰한 결과에서도 두께나 온도에 따른 P3HT의 표면 morphology 차이를 확인할 수 없었다. 본 연구에서 PVK와 P3HT의 조합이 수율(yield)면에서 가장 안정적이면서 $3.43\;nF/cm^2$의 가장 높은 capacitance 값을 나타내고 $V_{th}$ 값 또한 -1.6V로 가장 낮은 값을 보였다.

• The Journal of the Korea Contents Association
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• v.15 no.8
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• pp.69-76
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• 2015

With Various signs are installed at roadside to display the message which rather confuse the drivers. The technologies using advanced lighting system and LED have improved the visibility at nighttime but the problems with plural signs have yet to be resolved. In order to solve this problem, LED and the prismatic variable message sign have been applied. But, they have been provided limited information by the display limit. This research conducted to study patent and technical trend of the existing variable message signs to understand the present technology. And, we suggested next generation display to improve providing information. Therefore, we conducted to compare the LED and the OLED by technical and economical literature review. Also, this research conducted test of luminance contrast about the LED and the OLED display in order to understand the possibility of replacing road signs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.397-402
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• 2010

In this paper, we studied WVTR(water vapor transmission rate) properties of $Si_3N_4$ thin film that was deposited using TCP-CVD (transformer coupled plasma chemical vapor deposition) method for the possibility of OLED(organic light emitting diode) encapsulation. Considering the conventional OLED processing temperature limit of below $80^{\circ}C$, the $Si_3N_4$ thin films were deposited at room temperature. The $Si_3N_4$ thin films were prepared with the process conditions: $SiH_4$ and $N_2$, as reactive gases; working pressure below 15 mTorr; RF power for TCP below 500 W. Through MOCON test for WVTR, we analyzed water vapor permeation per day. We obtained that WVTR property below 6~0.05 gm/$m^2$/day at process conditions. The best preparation condition for $Si_3N_4$ thin film to get the best WVTR property of 0.05 gm/$m^2$/day were $SiH_4:N_2$ gas flow rate of 10:200 sccm, working pressure of 10 mTorr, working distance of 70 mm, TCP power of 500 W and film thickness of 200 nm. respectively. The proposed results indicates that the $Si_3N_4$ thin film could replace metal or glass as encapsulation for flexible OLED.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.260-264
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• 2012

We have investigated the effect of ambient gases on the structural, electrical, and optical characteristics of IZO thin films intended for use as anode contacts in the organic light emitting diodes (OLED) devices. These IZO thin films were deposited on the PES film by radio frequency (RF) magnetron sputtering under different ambient gases (Ar, Ar + O2, and Ar + H2) at room temperature. In order to investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon has been changed from 0.1 sccm to 0.5 sccm, respectively. All the IZO thin film has an (222) preferential orientation regardless of ambient gases. The electrical resistivity of the IZO film increased with increasing O2 flow rate, whereas the electrical resistivity decreased sharply under an Ar + H2 atmosphere and was nearly similar regardless of the H2 flow rate. The change of electrical resistivity with changes in the ambient gas composition was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. All the films showed the average transmittance over 85% in the visible range. The OLED device was fabricated with different IZO substrates made with the configuration of IZO/α-NPD/DPVB/Alq3/LiF/Al in order to elucidate the performance of the IZO substrate. The current density and the luminance of OLED devices with IZO thin films deposited in 0.5 sccm H2 ambient gas are the highest amongst all other films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.