• 제목/요약/키워드: fixed bias

검색결과 199건 처리시간 0.023초

Different approaches for numerical modeling of seismic soil-structure interaction: impacts on the seismic response of a simplified reinforced concrete integral bridge

  • Dhar, Sreya;Ozcebe, Ali Guney;Dasgupta, Kaustubh;Petrini, Lorenza;Paolucci, Roberto
    • Earthquakes and Structures
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    • 제17권4호
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    • pp.373-385
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    • 2019
  • In this article, different frequently adopted modeling aspects of linear and nonlinear dynamic soil-structure interaction (SSI) are studied on a pile-supported integral abutment bridge structure using the open-source platform OpenSees (McKenna et al. 2000, Mazzoni et al. 2007, McKenna and Fenves 2008) for a 2D domain. Analyzed approaches are as follows: (i) free field input at the base of fixed base bridge; (ii) SSI input at the base of fixed base bridge; (iii) SSI model with two dimensional quadrilateral soil elements interacting with bridge and incident input motion propagating upwards at model bottom boundary (with and without considering the effect of abutment backfill response); (iv) simplified SSI model by idealizing the interaction between structural and soil elements through nonlinear springs (with and without considering the effect of abutment backfill response). Salient conclusions of this paper include: (i) free-field motions may differ significantly from those computed at the base of the bridge foundations, thus put a significant bias on the inertial component of SSI; (ii) conventional modeling of SSI through series of soil springs and dashpot system seems to stay on the safer side under dynamic conditions when one considers the seismic actions on the structure by considering a fully coupled SSI model; (iii) consideration of abutment-backfill in the SSI model positively affects the general response of the bridge, as a result of large passive resistance that may develop behind the abutments.

Influence of the hydrogen post-annealing on the electrical properties of metal/alumina/silicon-nitride/silicon-oxide/silicon capacitors for flash memories

  • Kim, Hee-Dong;An, Ho-Myoung;Seo, Yu-Jeong;Zhang, Yong-Jie;Kim, Tae-Geun
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.122-122
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    • 2008
  • Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

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강자성 공명법을 이용한 CoFe/MnIr 박막의 교환 결합 에너지 분석 (Analysis of Exchange Coupling Energy by Ferromagnetic Resonance Method in CoFe/MnIr Bilayers)

  • 김동영
    • 한국자기학회지
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    • 제22권6호
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    • pp.204-209
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    • 2012
  • 본 연구에서는 CoFe/MnIr 이중층 구조의 계면에 존재하는 비상보성 반강자성(AF) 스핀들에 의한 교환 결합 에너지 특성을 강자성 공명(FMR) 측정법을 이용하여 분석하였다. MnIr의 두께가 $t_{AF}$= 0, 3 및 10 nm 재료를 열처리한 한 후 이들 재료의 FMR 신호를 측정하였으며, $t_{AF}$= 0 nm 재료를 기준으로 하여 $t_{AF}$= 3 및 10 nm 재료의 교환 바이어스 자기장($H_{ex}$)과 회전 이방성 자기장($H_{ra}$)을 도출하였다. $300^{\circ}C$에서 열처리한 재료의 경우, $H_{ex}$$H_{ra}$의 합은 MnIr의 임계 두께에 무관하게 동일한 값을 보이는데, 이는 비상보성 AF 스핀들이 모두 한 방향으로 정열 되었음을 의미한다. 이들 결과로부터 비상보성 AF 스핀들 중에서 일부분은 CoFe/MnIr의 계면에 고정되어 $H_{ex}$로 발현되어 나타나고, 나머지 부분은 자기장의 방향에 따라서 회전하므로 $H_{ra}$로 발현되고 있음을 알 수 있었다. 따라서 교환 결합 에너지는 교환 바이어스 에너지 및 회전 이방성 에너지의 합으로 표현될 수 있음을 보였다.

Meta-analysis of the Relation Between the VDR Gene TaqIpolymorphism and Genetic Susceptibility to Prostate Cancer in Asian Populations

  • Guo, Ya-Jie;Shi, Ze-Ming;Liu, Jun-Da;Lei, Ning;Chen, Qiu-Hong;Tang, Ying
    • Asian Pacific Journal of Cancer Prevention
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    • 제13권9호
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    • pp.4441-4444
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    • 2012
  • Background: Polymorphisms of the Taq I gene have been associated with prostate cancer risk. Methods:We applied a fixed-effects model to combine odds ratios (ORs) and 95% confidence intervals (95% CI). The Egger's test was carried out to evaluate potential publication bias. Results: A total of 10 case-control studies enrolling 1,141 prostate cancer patients and 1,685 controls were included in this meta-analysis. Compared with the T allele, the OR for the C allele was 0.81 (0.70-0.94). The ORs for CT and CC+CT genotypes were 0.86 (0.74-1.01) and 0.84 (0.73-0.97) compared to wide type genotype (homozygote TT). Conclusions: The present meta-analysis suggests that the TF gene Taq I polymorphism may reduce the prostate cancer risk in Asian populations.

$Cl_2/Ar$ 유도 결합 플라즈마에 의한 gold 박막의 식각특성 (Etching characteristics of gold thin films using inductively coupled $Cl_2/Ar$ plasma)

  • 장윤성;김동표;김창일;장의구;이수재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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    • pp.7-11
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    • 2002
  • In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

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Al$_2$O$_3$ formation on Si by catalytic chemical vapour deposition

  • Ogita, Yoh-Ichiro;Shinshi Iehara;Toshiyuki Tomita
    • E2M - 전기 전자와 첨단 소재
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    • 제16권9호
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    • pp.63.1-63
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    • 2003
  • Catalytic chemical vapor deposition (Cat-CVD) has been developed to deposit alumina(Al$_2$O$_3$) thin films on silicon (Si) crystal using N$_2$ bubbled tir-methyl aluminium [Al(CH$_3$)$_3$, TMA] and molecular oxygen (O$_2$) as source species and tungsten wires as a catalyzer. The catalyzer dissociated TMA at approximately 600$^{\circ}C$ The maximum deposition rate was 18 nm/min at a catalyzer temperature of 1000 and substrate temperature of 800$^{\circ}C$. Metal oxide semiconductor (MOS) diodes were fabricated using gates composed of 32.5-nm-thick alumina film deposited as a substrate temperature of 400oC. The capacitance measurements resulted in a relatively dielectric constant of 7, 4, fixed charge density of 1.74*10e12/$\textrm{cm}^2$, small hysteresis voltage of 0.12V, and very few interface trapping charge. The leakage current was 5.01*10e-7 A/$\textrm{cm}^2$ at a gate bias of 1V.

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HBr/Ar/CHF3 혼합가스를 이용한 ZnO 박막의 유도결합 플라즈마 식각 (Etching Characteristics of ZnO Thin Films Using Inductively Coupled Plasma of HBr/Ar/CHF3 Gas Mixtures)

  • 김문근;함용현;권광호;이현우
    • 한국전기전자재료학회논문지
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    • 제23권12호
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    • pp.915-918
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    • 2010
  • In this work, the etching characteristics of ZnO thin films were investigated using an inductively coupled plasma(ICP) of HBr/Ar/$CHF_3$ gas mixtures. The plasma characteristics were analyzed by a quadrupole mass spectrometer (QMS) and double langmuir probe (DLP). The surface reaction of the ZnO thin films was investigated using X-ray photoelectron spectroscopy (XPS). The etch rate of ZnO was measured as a function of the $CHF_3$ mixing ratio in the range of 0-15% in an HBr:Ar=5:2 plasma at a fixed gas pressure (6mTorr), input power (700 W), bias power (200 W) and total gas flow rate(50sccm). The etch rate of the ZnO films decreased with increasing $CHF_3$ fraction due to the etch-blocking polymer layer formation.

Accuracy Analysis of GNSS-derived Orthometric Heights on the Leveling Loop Disconnected Area

  • Jung, Sung Chae;Kwon, Jay Hyoun;Lee, Jisun
    • 한국측량학회지
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    • 제36권1호
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    • pp.1-8
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    • 2018
  • To compensate for the shortcomings of spirit leveling, research on the determination of GNSS (Global Navigation Satellite System)-derived orthometric height has been actively carried out. However, most analyses were primarily performed inland. In this study, the influences of the arrangement of control points, observation duration, and geoid model on the accuracy of the GNSS-derived orthometric height have been analyzed to suggest the proper method to apply the determination of GNSS-derived orthometric height to the leveling loop disconnected area. As a result, it was found that two known points located near the unknown points need to be fixed in the leveling loop disconnected area. Further, 3 cm level of accuracy can be achieved if the GNSS survey is performed over two days, for four hours per day. In terms of the geoid model, the latest national geoid model should be applied rather than the EGM08 (Earth Gravitational Model 2008) to minimize regional bias and increase accuracy. Future research is necessary to apply the determination of the GNSS-derived orthometric height technique as a method to connect with the islands because the vertical reference system used inland and that used for the islands in Korea are still different.

The GSTT1 Null Genotype Contributes to Increased Risk of Prostate Cancer in Asians: a Meta-analysis

  • Pan, Zhao-Jun;Huang, Wei-Jia;Zou, Zi-Hao;Gao, Xing-Cheng
    • Asian Pacific Journal of Cancer Prevention
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    • 제13권6호
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    • pp.2635-2638
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    • 2012
  • Background: Many studies have investigated the association between glutathione S-transferase T 1 (GSTT1) null genotype and risk of prostate cancer, but the impact of GSTT1 null genotype in Asians is still unclear owing to inconsistencies across results. Thie present meta-analysis aimed to quantify the strength of the association between GSTT1 null genotype and risk of prostate cancer. Methods: We searched the PubMed, Embase and Wangfang databases for studies of associations between the GSTT1 null genotype and risk of prostate cancer in Asians and estimated summary odds ratio (OR) with their 95% confidence interval (95% CI). Results: A total of 11 case-control studies with 3,118 subjects were included in this meta-analysis, which showed the GSTT1 null genotype to be significantly associated with increased risk of prostate cancer in Asians (random-effects OR = 1.49, 95% CI 1.15-1.92, P = 0.002), also after adjustment for heterogeneity (fixed-effects OR = 1.45, 95% CI 1.23-1.70, P < 0.001). No evidence of publication bias was observed. Conclusions: This meta-analysis of available data suggested the GSTT1 null genotype does contribute to increased risk of prostate cancer in Asians.

The XRCC1 Arg280His Gene Polymorphism and Hepatocellular Carcinoma Risk: A Meta-analysis

  • Li, Lu-Ping;Wu, Wei;Li, Xing-Hai;Song, Shu-Sen
    • Asian Pacific Journal of Cancer Prevention
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    • 제14권3호
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    • pp.2033-2036
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    • 2013
  • Many studies have suggested that the XRCC1 Arg280His gene polymorphism might be involved in the development of hepatocellular carcinoma (HCC). However, the results have been inconsistent. In this study, the authors performed a meta-analysis to assess the association between XRCC1 Arg280His and HCC susceptibility. Published literature from PubMed, EMBASE and CNKI Data was searched. Pooled odds ratios (ORs) and 95% confidence intervals (CIs) were calculated using fixed- or random-effects models when appropriate. Begg's test was used to measure publication bias. A total of 7 case-control studies covering 1,448 HCC cases and 1,544 controls were included. No significant variation in HCC risk was detected in any of the genetic models overall. In the stratified analysis, four studies with sample sizes over 300 produced similar results. The corresponding pooled ORs were not substantially altered after the exclusion of three studies deviating from Hardy-Weinberg equilibrium in the control group, which indicated reliability for our meta-analysis results.