• Journal of Surface Science and Engineering
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• v.49 no.3
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• pp.280-285
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• 2016

In this study, we investigated the influences of potassium fluoride(KF) addition on the surface characteristics of plasma electrolytic oxidation(PEO) coating produced on Al alloy. The PEO of marine grade Al alloy(5083 grade) was conducted in KOH 1g/L solution adding different concentrations of KF(0, 1 and 2 g/L) under a galvanostatic regime. With KF addition, unusual behavior was observed on the voltage-time characteristic curves, which can be characterized by the following process: (i) initial rapid increase in voltage (ii) a short plateau after 1st breakdown (iii) gradual increase in voltage (iv) intermittent fluctuation of voltage after 2nd breakdown. The SEM observation revealed irregular surface morphology with KF addition, as compared with one formed without KF addition, which had a reticulate structure. The XRD analysis detected the formation of aluminium hydroxide fluoride hydrate($H_{4.76}Al_2F_{3.24}O_{3.76}$) on surface grown by PEO process with KF. Particularly, at very early stage of the process (~ 120 s), thin film was formed having nanoporous structure, and F element was confirmed on surface by EDS analysis. The thickness and surface roughness of the coating increased with increasing KF concentration. As a result, KF addition was found to be less beneficial influences on PEO of marine grade Al alloy, and therefore needs further research to improve its capability.

• Journal of Surface Science and Engineering
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• v.50 no.5
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• pp.366-372
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• 2017

Plasma electrolytic oxidation(PEO) has attracted attention as a surface treatment which has high wear resistance and corrosion resistance. PEO is generally considered as cost-effective, environmentally friendly and superior in terms of coating performance. Most of studies about the PEO processes have been applied to light metals such as Al and Mg. Because the strength of Al and Mg is weaker than that of steel, there is a limit to the application. In this study, PEO process was used to form oxide coatings on Hot dipped aluminized(HDA) steel and the characteristics of the coating film according to the PEO current density were studied. The morphology was observed by SEM and component was analyzed by using EDS. The corrosion behaviors of PEO coating films were estimated by exposing salt spray test at 5 wt.% NaCl solution and measuring polarization curves in deaerated 3 wt.% NaCl solution. With the increase of PEO process current density, the pore size of the coating surface and the thickness of coating increased. It was confirmed that no Fe component was present on the coating surface. PEO coating films obviously showed good corrosion resistance compared with HDA. It is considered that the PEO coating acts as a barrier to protect the base material from external factors causing corrosion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• Journal of radiological science and technology
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• v.16 no.2
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• pp.27-38
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• 1993

To investigate relationships between image guality and exposure dose, Chest X-ray films were evaluated for the following points:how much scattered radiation can affect reduction in image quality and can be permissible diagnostically? For this purpose using a test charts and Burger's phantoms. The visual evaluation of their X-ray films and the measurements of scattered radiation were carried out. The dose of scattered radiation ranging from 20 to 25% was found to be for nothing in any diagnostic obstacle. In this range, surface doses were low of 17, 21, and $25{\mu}Gy$ for The thickness of the chest of 15, 20 and 25 cm respectively. Comparison of these high voltage X-ray films with low voltage ones showed a surface dose rate of 1:11.7. Therefore, X-ray quality, photosensitive materials(film and screen) and grid should be selected very carefully for the purpose of reduction in exposure dose.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.74-77
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• 2004

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.141-142
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• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $1.9{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is $700^{\circ}C$, 3hr. Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.581-586
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• 2007

[ $(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ ] (BSCT) powders, prepared by sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing method. The structural and dielectric properties were investigated as a function of the $Yb_2O_3$ doping contents. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed the typical XRD patterns of a cubic polycrystalline structure. The average thickness of all BSCT thick films was about $70{\mu}m$. The grain size of the BSCT thick film doped with 0.7 mol% $Yb_2O_3$ was approximately $6.2{\mu}m$. The Curie temperature and relative dielectric constant at room temperature decreased with increasing $Yb_2O_3$ amount. Relative dielectric constant and dielectric loss of the specimen doped with 0.1 mol% $Yb_2O_3$ were 4637 and 19 % at Curie temperature, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.821-825
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• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.852-856
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• 2014

$BaTiO_3$ nano powder can be synthesized by hydrate salt method at $120^{\circ}C$ in air. Decreasing the thickness of thick film, the nano dielectric particle is needed in electronic ceramics. However, the synthesis of $BaTiO_3$ nano particle at low temperature in air and their mechanism were not reported enough. And ultrasonic treatment can be tried because of low temperature process in air. Therefore, in this study, the $BaTiO_3$ nano powder was synthesised with the synthesis time and ultrasonic treatment at $120^{\circ}C$ in air. In the synthesis process, the effects of process were evaluated. From the experimental observation, the synthesis mechanism was proposed. The homogeneous $BaTiO_3$ particle was synthesised by KOH salt solution at $120^{\circ}C$ for 1hour. It was conformed that the ultrasonic treatment effected on the increase of synthesis rate. After cutting the salt powder using FIB, $BaTiO_3$ nano particles observed homogeneously in the cross-section of the salt particle.

• Polymer(Korea)
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• v.33 no.1
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• pp.91-95
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• 2009

We fabricated the electromagnetic (EM) noise absorber films for high temperature use by blending a soft magnetic powder with poly(amide imide) (PAI). The EM noise absorber films of PAI/soft magnet composite were prepared by casting the solution of poly(amide amic acid)/soft magnet powder into glass substrate with casting applicator device and then thermal imidization. The obtained films were fully characterized and their physical properties including thermal behavior, thermal stability and mechanical properties were studied. The EM noise absorption ability was also investigated using micro-strip line method. At 1 GHz, the power loss of composite film with 150 ${\mu}m$ thickness was about 25%.