• Title/Summary/Keyword: film studies

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Surface Treatment Effect on Electrochemical characteristics of Al Alloy for ship

  • Lee, Seung-Jun;Kim, Seong-Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.149-149
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    • 2017
  • Aluminum alloys have poor corrosion resistance compared to the pure aluminum due to the additive elements. Thus, anodizing technology artificially generating thick oxide films are widely applied nowadays in order to improve corrosion resistance. Anodizing is one of the surface modification techniques, which is commercially applicable to a large surface at a low price. However, most studies up to now have focused on its commercialization with hardly any research on the assessment and improvement of the physical characteristics of the anodized films. Therefore, this study aims to select the optimum temperature of sulfuric electrolyte to perform excellent corrosion resistance in the harsh marine environment through electrochemical experiment in the seawater upon generating porous films by variating the temperatures of sulfuric electrolyte. To fabricate uniform porous film of 5083 aluminum alloy, we conducted electro-polishing under the 25 V at $5^{\circ}C$ condition for three minutes using mixed solution of ethanol (95 %) and perchloric (70 %) acid with volume ratio of 4:1. Afterward, the first step surface modification was performed using sulfuric acid as an electrolyte where the electrolyte concentration was maintained at 10 vol.% by using a jacketed beaker. For anode, 5083 aluminum alloy with thickness of 5 mm and size of $2cm{\times}2cm$ was used, while platinum electrode was used for cathode. The distance between the two was maintained at 3 cm. Anodic polarization test was performed at scan rate of 2 mV/s up to +3.0 V vs open circuit potential in natural seawater. Surface morphology was compared using 3D analysis microscope to observe the damage behavior. As a result, the case of surface modification showed a significantly lower corrosion current density than that without modification, indicating excellent corrosion resistance.

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The electronic structure of the ion-beam-mixed Pt-Cu alloys by XPS and XANES

  • Lim, K.Y.;Lee, Y.S.;Chung, Y.D.;Lee, K.M.;Jeon, Y.;Whang, C.N.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1998.02a
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    • pp.133-133
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    • 1998
  • In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K a(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

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Coherent x-ray scattering to study dynamics in thin films (결맞는 X-선 산란을 이용한 박막의 표면 거동 연구)

  • Kim, Hyun-Jung
    • Journal of the Korean Vacuum Society
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    • v.14 no.3
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    • pp.143-146
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    • 2005
  • A new method of x-ray photon correlation spectroscopy (XPCS) using coherent x-rays is developed recently for probing the dynamics of surface height fluctuations as a function of lateral length scale. This emerging technique applies the principles of dynamic light scattering in the x-ray regime. The short wavelength and slow time scales characteristic of XPCS extend the phase space accessible to scattering studies beyond some restrictions by light and neutron. In this paper, we demonstrate XPCS to study the dynamics of surface fluctuations in thin supported polymer films. We present experimental verification of the theoretical predictions for the wave vector and temperature dependence of the capillary wave relaxation times for the supported polymer films at melt for the film thicknesses thicker than 4 times of the radius of gyration of polymer. We observed a deviation from the conventional capillary wave predictions in thinner films. The analysis will be discussed in terms of surface tension, viscosity and effective interactions with the substrate.

Structuyal and physical properties of thin copper films deposited on porous silicon (다공성 실리콘위에 증착된 Cu 박막의 구조적 물리적 특성)

  • 홍광표;권덕렬;박현아;이종무
    • Journal of the Korean Vacuum Society
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    • v.12 no.2
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    • pp.123-129
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    • 2003
  • Thin transparent Cu films in the thickness range of 10 ~ 40 nm are deposited by rf-magnetron sputtering on porous silicon (PS) anodized on p-type silicon in dark. Microstructural features of the Cu films are investigated using SEM, AFM and XRD techniques. The RMS roughness of the Cu films is found to be around 1.47 nm and the grain growth is columnar with a (111) preferred orientation and follows the Volmer-Weber mode. The photoluminescence studies showed that a broad luminiscence peak of PS near the blue-green region gets blue shifted (~0.05 eV) with a small reduction in intensity and therefore, Cu-related PL quenching is absent. The FTIR absorption spectra on the PS/Cu structure revealed no major change of the native PS peaks but only a reduction in the relative intensity. The I-V characteristic curves further establish the Schottky nature of the diode with an ideality factor of 2.77 and a barrier height of 0.678 eV. An electroluminiscence (EL) signal of small intensity could be detected for the above diode.

Effect of the oxygen flow ratio on the structural and electrical properties of indium zinc tin oxide (IZTO) films prepared by pulsed DC magnetron sputtering

  • Son, Dong-Jin;Nam, Eun-Kyoung;Jung, Dong-Geun;Ko, Yoon-Duk;Choi, Byung-Hyun;Kim, Young-Sung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.168-168
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    • 2010
  • Transparent conduction oxides (TCOs) films is extensively reported for optoelectronic devices application such as touch panels, solar cells, liquid crystal displays (LCDs), and organic light emitting diodes(OLEDs). Among the many TCO film, indium tin oxide(ITO) is in great demand due to the growth of flat panel display industry. However, indium is not only high cost but also its deposits dwindling. Therefore, many studies are being done on the transparent conductive oxides(TCOs). We fabricated a target of IZTO(In2O3:ZnO:SnO2=70:15:15 wt.%) reduced indium. Then, IZTO thin films were deposited on glass substrates by pulsed DC magnetron sputtering with various oxygen flow ratio. The substrate temperature was fixed at the room temperature. We investigated the electrical, optical, structural properties of IZTO thin films. The electrical properties of IZTO thin films were dependent on the oxygen partial pressure. As a result, the most excellent properties of IZTO thin films were obtained at the 3% of oxygen flow rate with the low resistivity of $7.236{\times}10^{-4}{\Omega}cm$. And also the optical properties of IZTO thin films were shown the good transmittance over 80%. These IZTO thin films were used to fabricated organic light emitting diodes(OLEDs) as anode and the device performances studied. The OLED with an IZTO anode deposited at optimized deposition condition showed good brightness properties. Therefore, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

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Photoelectrochamical characteristics of $WO_3$ on metal substrate for hydrogen production (텅스텐산화물/금속기판의 광전극 특성)

  • Go, GeunHo;Shinde, Pravin S.;Seo, SeonHee;Lee, Dongyoon;Lee, Wonjae
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.99.2-99.2
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    • 2011
  • Transparent conducting oxides (TCOs) supported on glass are widely used as substrates in PEC studies for photovoltaic hydrogen generation applications However, high sheet resistane ($10{\sim}15{\Omega}/cm^2$) and fragileness of glass-supported TCO substrates are the obstacles to produce the large area PEC cells. Such internal sheet resistance is detrimental to efficient collection of photogenerated majority charge carriers at the photoactive material and electrolyte interface. Moreover, these TCO substrates are very expensive and consume about 40~60% cost of the devices. Hence, a low sheet resistance of the substrate is a key point in improving the performance of PEC devices. Metallic substrates coated with a photoactive material would be a good choice for efficient charge collection. Such metal substrates based photanodes are best candidate for large-scale phtoelectrochemical water splitting for hydrogen generation. In this study, we report the enhanced PEC performance of $WO_3$ film on metal(chemical etched, bare) substrate. It is proposed that interface between $WO_3$ and the metal substrate is responsible for efficient charge transfer and demonstrated significant improvement in the photoelectrochmical performance. X-ray diffration and FESEM suduies reveled that $WO_3$ films are monoclinic, porous, polycrystalline with average grain size of ~50nm. Photocurrent of $WO_3$ prepared on metal substrates was measured in 0.5M $H_2SO_4$ electroyte under simulated $100mW/cm^2$ illumination.

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Diagnostic Studies of Plasmas in Saline Solutions: the Frequency Effects and the Electrode Erosion Mechanism

  • Hsu, Cheng-Che
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.16-16
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    • 2011
  • Plasmas in saline solutions receive considerable attention in recent years. How the operating parameters influence the plasma characteristics and how the electrode erosion occurs have been topics that require further study. In the first part of this talk, the effect of the frequency on the plasmas characteristics in saline solution driven by 50~1000 Hz AC power will be presented. Two distinct modes, namely bubble and jetting modes, are identified. The bubble mode occurs under low frequencies. In this mode, one mm-sized bubble is tightly attached to the electrode tip and oscillates with the applied voltage. With an increase in the frequency, it shows the jetting mode, in which many smaller bubbles are continuous formed and jetted away from the electrode surface. Multiple mechanisms that are potentially responsible to such a change in bubble dynamics have been proposed and the dominant mechanism is identified. From the Stark broadening of the hydrogen optical emission line, electron densities in both modes are estimated. It shows clearly that the driving frequency greatly influences the bubble dynamics, which in turn alters the plasma behavior. In the second part, the study of the erosion of a tungsten electrode immersed in saline solution under conditions suitable for bio-medical applications is presented. The electrode is immersed in 0.1 M saline solution and is positively or negatively biased using a DC power source up to 600 V. It is identified that when the electrode is positively biased, erosion by the surface electrolytic oxidation is the dominant mechanism with an applied voltage below 150 V. An increase in the applied voltage leads to the formation of the plasma and the damage by the plasma and the thermal effect becomes more prominent. The formation of the gas film at the electrode surface leads to the formation of the plasma and hinders the electrolytic erosion. In the negatively-biased electrode, no electrolytic oxidation is seen and the damage is mostly likely due to the plasma erosion and the thermal effect.

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Rear Surface Passivation with Al2O3 Layer by Reactive Magnetron Sputtering for High-Efficiency Silicon Solar Cell

  • Moon, Sun-Woo;Kim, Eun-Kyeom;Park, Won-Woong;Jeon, Jun-Hong;Choi, Jin-Young;Kim, Dong-Hwan;Han, Seung-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.211-211
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    • 2012
  • The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

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Voltammetric Determination of Copper(II) at Chemically Modified Carbon Paste Electrodes Containing Alga

  • Bae, Zun-Ung;Kim, Young-Lark;Chang, Hye-Young
    • Analytical Science and Technology
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    • v.8 no.4
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    • pp.611-615
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    • 1995
  • The design of appropriate chemically modified electrodes should allow development of new voltammetric measurement schemes with enhanced selectivity and sensitivity. Microorganism like algae has high ability to trap toxic and heavy metal ions and different affinities for metal ions. A copper(II) ion-selective carbon paste electrode was constructed by incorporating alga Anabaena into a conventional carbon paste mixture, and then the film of 10% Nafion was coated to avoid the swelling of the electrode surface. Copper ion could be deposited at the 25% algamodified electrode for 15 min without the applied potential while stirring the solution by only immersing the electrode in a buffer (pH 4.0) cot1taining copper(II). Temperature was controlled at $35^{\circ}C$. After preconcentration was carried out the electrode was transferred to a 0.1 M potassium chloride solution and was reduced at -0.6 volt at $25^{\circ}C$. The differential pulse anodic stripping voltammetry was employed. A well-defined oxidation peak could be obtained at -0.1 volt (vs SCE). In five deposition / measurement / regeneration cycles, the responses were reproducible and relative standard deviations were 3.3% for $8.0{\times}10^{-4}M$ copper(II). Calibration curve for copper was linear over the range from $2.0{\times}10^{-4}M$ to $1.0{\times}10^{-3}M$. The detection limit was $7.5{\times}10^{-5}M$. Studies of the effect of diverse ions showed that the coexisting metal ions had little or no effect for the determination of copper. But anions such as cyanide. oxalate and EDTA seriously interfered.

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Study on the Development of Finishing Design Methods for Building Structures Using the Metal Films (금속피막에 의한 건축 마감 의장 기법 개발에 관한 연구)

  • Lim, Ji-Taek;Jung, Hwa-Rang
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.22 no.1
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    • pp.183-189
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    • 2018
  • In this study, the bond strength between concrete and metal films was investigate according to changing water content ratio of substrate concrete by pull-out test in order to develop the new finishing design methods for building structures using the metal films. The following conclusions were obtained as a result of the studies. It was find that the colour of metal did not change before and after the metal spraying. Also, the water content ratio of substrate concrete must be controlled under 10% weight to confirm the standard bond strength of finishing material to concrete. 2.5 MPa. To enhance the bond strength between concrete and metal films, it is very effective to strengthen the concrete surface using the agent which strengthen the concrete surface and seal the pore of metal film by the sealing agents. Therefore, the control of concrete surface treatment and water content ratio are necessary to secure the bond strength of metal films.