• Title/Summary/Keyword: film structure

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Electrode characteristics of $AB_2$ type hydrogen storage alloy modified by Cr, La addition and fluorination ($AB_2$계 수소저장합금의 전극특성에 미치는 Cr, La 첨가 효과 및 표면 불화처리 효과)

  • Chang I.;Lee B. H.;Cho W. I.;Jang H.;Cho B. W.;Yun K. S.
    • Journal of the Korean Electrochemical Society
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    • v.1 no.1
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    • pp.45-51
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    • 1998
  • [ $AB_2-type$ ] alloy, one kind of hydrogen storage alloys used as an anode of Ni-MH batteries, has large discharge capacity but has remaining problems regarding initial activation, cycle life and self-discharge. This study investigates the effects of Cr-addition and fluorination after La-addition on $Zr_{0.7}Ti_{0.3}V_{0.4}Mn_{0.4}Ni_{1.2}$, composition $AB_2-type$ alloy. EPMA and SEM surface analysis techniques were used and the crystal structure was characterized by XRD analysis. In addition, electrodes were fabricated out of the alloys and characterized by constant current cycling test, electrochemical impedance spectroscopy and potentiodynamic polarization. Cr-addition was found to be effective to cycle life and self-discharge but ineffective to initial activation due to formation of stable oxide film on surface. Fluorination after La-addition to the alloys improved initial activation remarkably due to formation of highly reactive particles on surface.

Numerical Analysis of Bragg Reflector Type Film Bulk Acoustic Wave Resonator (수치적 계산을 이용한 Bragg Reflector형 탄성파 공진기의 특성 분석)

  • 김주형;이시형;안진호;주병권;이전국
    • Journal of the Korean Ceramic Society
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    • v.38 no.11
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    • pp.980-986
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    • 2001
  • Bragg reflector type FBAR was fabricated on the Si(100) substrate. We measured a frequency response of the resonator at 5.2 GHz and analyzed it by numerical calculation considering actual acoustic losses of each layer in the structure. We fabricated nine layer Bragg reflector of W-SiO$_2$pairs using r.f. sputtering method and fabricated AlN piezoelectric and Al electrodes using pulsed dc sputtering. The return loss(S$_{11}$) of the fabricated Bragg reflector type FBAR was 12 dB at 5.38 GHz and the series resonance frequency(f$_{s}$) was 5.376 GHz and the parallel resonance frequency(f$_{p}$) was 5.3865 GHz. Effective electro-mechanical coupling constant (K$_{eff{^2}}$) and Quality factors(Q$_{s}$), the Figures of Merit of the resonator, were about 0.48% and 411, respectively. We extracted acoustic parameters of AlN piezoelectric and reflection coefficient of the Bragg reflector by numerical calculation. We could know that material acoustic impedance and wave velocity of AlN piezoelectric decreased for intrinsic value and the electromechanical coupling constant(K$_2$) value was very low owing to the poor quality of the AlN piezoelectric. Reflection coefficient of Bragg reflector was 0.99966 and reflection band was very wide from 2.5 to 9.5 GHz.

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Analysis of C-V Characteristics of MIS Structure Based on OTFT Technology for Flexible AM-OLED (Flexible AM-OLED를 위한 OTFT 기술 기반의 MIS 구조 C-V 특성 분석)

  • Kim, Jung-Seok;Kim, Byoung-Min;Chang, Jong-Hyeon;Ju, Byeong-Kwon;Pak, Jung-Ho
    • Proceedings of the KIEE Conference
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    • 2006.10a
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    • pp.77-78
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    • 2006
  • 최근 flexible OLED의 구동에 사용하기 위한 유기박막트랜지스터(Organic Thin Film Transistor, OTFT)의 연구에서는 용매에 용해되어 spin coating이 가능한 재료의 개발에 관심을 두고 있다. 현재 pentacene으로는 아직 spin coating으로 제작할 수 있는 상용화된 제품이 없고 spin coating이 가능한 활성층 물질(active material)로 P3HT가 쓰이고 있다. 본 연구에서는 용해 가능한 P3HT 활성층 물질과 여러 종류의 용해 가능한 게이트 절연물(gate insulator, Gl)을 사용하여 안정된 소자를 구현할 수 있는 공정을 개발하는 목적으로 metal-insulator-semironductor(MIS) 소자를 제작하여 C-V 특성을 측정하고 분석하였다. 먼저 7mm${\times}$7mm 크기의 pyrex glass 시편 위에 바닥 전극으로 $1600{\AA}$ Au을 증착하고 spin coating 방식을 이용하여 PVP, PVA, PVK, BCB, Pl의 5종류의 게이트 절연층을 각각 형성하였고 그 위에 같은 방법으로 P3HT를 코팅하였다. P3HT 코팅 시 bake 공정의 유무와 spin rpm의 변화에 따른 P3HT의 두께를 측정하였다. Gl의 종류별로 주파수에 따른 capatltancc를 측정하여 비교, 분석하였다. C-V 측정 결과 PVP, PVA, PVK, BCB, Pl의 단위 면적당 capacitance 값은 각각 1.06, 2.73, 2.94, 3.43, $2.78nF/cm^2$로 측정되었다. Threshold voltage, $V_{th}$는 각각 -0.4, -0.7, -1.6, -0.1, -0.2V를 나타냈다. 주파수에 따른 capacitance 변화율을 측정한 결과 Gl 물질 모두 주파수가 높을수록 capacitance가 점점 감소하는 경향을 보였으나 1${\sim}$2nF 이내의 범위에서 작은 변화율만 나타냈다. P3HT의 두께와 bake 온도를 변화시켜 C-V 값을 측정한 결과 차이는 없었다. FE-SEM으로 관찰한 결과에서도 두께나 온도에 따른 P3HT의 표면 morphology 차이를 확인할 수 없었다. 본 연구에서 PVK와 P3HT의 조합이 수율(yield)면에서 가장 안정적이면서 $3.43\;nF/cm^2$의 가장 높은 capacitance 값을 나타내고 $V_{th}$ 값 또한 -1.6V로 가장 낮은 값을 보였다.

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Effect of Alkali and Heat Treatments of Ti-6Al-4V Alloy on the Precipitation of Calcium Phosphate (Ti-6Al-4V 합금의 알칼리 및 열처리가 인산칼슘 침착에 미치는 영향)

  • Park, Jae-Han;Lim, Ki-Jung;Kim, Sang-Mok;Kim, Byung-Ock;Han, Kyung-Yoon
    • Journal of Periodontal and Implant Science
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    • v.30 no.1
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    • pp.187-203
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    • 2000
  • The precipitation of calcium phosphate on implant surface has been known to accelerate osseointegration and to enhance osseous adaptation. The present study was performed to examine whether the precipitation of calcium phosphate on Ti-6Al-4V alloy could be affected by the immersion in NaOH solution and heat treatment. Ti-6Al-4V alloy plates of $15{\times}3.5{\times}1mm$ in dimension were polished sequentially from #240 to #2,000 emery paper and one surface of each specimen was additionally polished with $0.1{\mu}m$ alumina paste. Polished specimens were soaked in various concentrations of NaOH solution(0.1, 1.0, 3.0, 5.0, 7.0, 10.0 M) at $60^{\circ}C$ for 24 hours for alkali treatment, and 5.0 M NaOH treated specimens were heated for 1 hour at each temperature of 400, 500, 600, 700, $800^{\circ}C$. After the alkali and heat treatments, specimens were soaked in the Hank's solution with pH 7.4 at $36.5^{\circ}C$ for 30days.The surface ingredient change of Ti-6Al-4V alloy was evaluated by thin-film X-ray diffractometer(TF-XRD) and the surface microstructure was observed by scanning electron microscope(SEM), and the elements of surface were analyzed by X-ray photoelectron spectroscopy(XPS). The results were obtained as follows ; 1. The precipitation of calcium phosphate on Ti-6Al-4V alloy was accelerated by the immersion in NaOH solution and heat treatment. 2. In Alkali treatment for the precipitation of calcium phosphate on Ti-6Al-4V alloy, the optimal concentration of NaOH solution was 5.0 M. 3. In heat treatment after alkali treatment in 5.0 M NaOH solution, the crystal formation on alloy surface was enhanced by increasing temperature. In heat treated alloys at $600^{\circ}C$, latticed structure and prominences of calcium phosphate layer were most dense. On heat treated alloy surface at the higher temperature(${\geq}700^{\circ}C$), main crystal form was titanium oxide rather than apatite. The above results suggested that the precipitation of calcium phosphate on the surface of Ti-6Al-4V alloy could be induced by alkali treatment in 5.0 M-NaOH solution and by heat treatment at $600^{\circ}C$.

Swelling Behavior and Hydration Number of Langmuir-Blodgett Films of Metal-Palmitate Deposited on a Piezoelectric Quartz Crystal Plate (압전수정결정판 위에 적층된 금속-Palmitate Langmuir-Blodgett 막의 팽창거동 및 수화수)

  • Jong-Jae Chung;Byung-Il Seo;Hai-Won Lee
    • Journal of the Korean Chemical Society
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    • v.37 no.3
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    • pp.302-308
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    • 1993
  • Monolayers of calcium palmitate were deposited on a piezoelectric quartz crystal plate by the Langmuir-Blodgett(LB) technique, and it was found from frequency changes of the quartz crystal deposited LB films. The usual carbonyl absorbance at 1704 cm$^{-1}C$ was replaced by the split band in the 1540~1590 cm$^{-1}C$. The two absorptions at 1580 cm$^{-1}C$ and 1540 cm$^{-1}C$ were assigned to the antisymmetric stretching vibration of the calcium carboxylate group and the hydrated species due to the lowering carbonyl stretching frequency by hydrogen bonding$^1$ respectively. Besides, it was demonstrated by X-ray diffraction analysis. The swelling behaviour of LB films in water phase at 23$^{\circ}C$ was observed from the frequency change of the LB films deposited quartz crystal with time. Calcium palmitate LB films has been found to swell substantially in water without flaking, whereas hexadecanol LB films hardly swelled in water. Amount of swelling of calcium palmitate LB films was equivalent to 47 wt.${\%}$ of the dry LB films, which means that ca. 7 water molecules were incorporated per calcium palmitate amphiphile. Chemical structure of calcium palmitate LB film was estimated as [CH$_3$(CH$_2$)$_{14}$COO]$_2$Ca${\cdot}$XH$_2$O, and the hydration number was 1.

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Fabrication of Silane-crosslinked Proton Exchange Membranes by Radiation and Evaluation of Fuel Cell Performance (방사선을 이용한 실란 가교구조의 유/무기 복합 수소이온 교환막 제조 및 연료전지 성능 평가)

  • Lee, Ji-Hong;Sohn, Joon-Yong;Shin, Dong-Won;Song, Ju-Myung;Lee, Young-Moo;Nho, Young-Chang;Shin, Jun-Hwa
    • Polymer(Korea)
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    • v.36 no.4
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    • pp.525-530
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    • 2012
  • In this study, silane-crosslinked organic/inorganic composite membranes were prepared by simultaneous irradiation grafting of binary monomer mixtures (styrene and 3-(trimethoxysilyl)propyl methacrylate (TMSPM)) with various compositions onto a poly(ethylene-alt-tetraethylene) (ETFE) film and followed by sol-gel processing and sulfonation to provide a silane-crosslinked structure and a proton conducting ability, respectively. The Fourier transform infrared spectroscopy (FTIR) and thermo gravimetric analysis (TGA) were utilized to confirm the crosslinking of ETFE-g-PS/PTMSPM films. The prepared membranes with similar ion exchange capacity but a different TMSPM content were selected and their membrane properties were compared. The ETFE-g-PSSA/PTMSPM membranes were characterized by water uptake, dimensional stability, and proton conductivity after sulfonation. The membrane electrode assemblies (MEA) of the prepared membranes were fabricated and their single cell performances were measured.

Facile Chemical Growth of Cu(OH)2 Thin Film Electrodes for High Performance Supercapacitors (간단한 화학적 합성을 통한 고성능 슈퍼캐패시터용 수산화 구리 전극)

  • Patil, U.M.;Nam, Min Sik;Shinde, N.M.;Jun, Seong Chan
    • KEPCO Journal on Electric Power and Energy
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    • v.1 no.1
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    • pp.175-180
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    • 2015
  • A facile soft chemical synthesis route is used to grow nano-buds of copper hydroxide [$Cu(OH)_2$] thin films on stainless steel substrate[SS]. Besides different chemical methods for synthesis of $Cu(OH)_2$ nanostructure, the chemical bath deposition (CBD) is attractive for its simplicity and environment friendly condition. The structural, morphological, and electro-chemical properties of $Cu(OH)_2$ thin films are studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD) measurement techniques. The results showed that, facile chemical synthesis route allows to form the polycrystalline, granular nano-buds of $Cu(OH)_2$ thin films. The electrochemical properties of $Cu(OH)_2$ thin films are studied in an aqueous 1 M KOH electrolyte using cyclic voltammetry. The sample exhibited supercapacitive behavior with $340Fg^{-1}$ specific capacitance. Moreover, electrochemical capacitive measurements of $Cu(OH)_2/SS$ electrode exhibit a high specific energy and power density about ${\sim}83Wh\;kg^{-1}$ and ${\sim}3.1kW\;kg^{-1}$, respectively, at $1mA\;cm^{-2}$ current density. The superior electrochemical properties of copper hydroxide ($Cu(OH)_2/SS$) electrode with nano-buds like structure mutually improves pseudocapacitive performance. This work evokes scalable chemical synthesis with the enhanced supercapacitive performance of $Cu(OH)_2/SS$ electrode in energy storage devices.

Generation of Testability on High Density /Speed ATM MCM and Its Library Build-up using BCB Thin Film Substrate (고속/고집적 ATM Switching MCM 구현을 위한 설계 Library 구축 밀 시험성 확보)

  • 김승곤;지성근;우준환;임성완
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.2
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    • pp.37-43
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    • 1999
  • Modules of the system that requires large capacity and high-speed information processing are implemented in the form of MCM that allows high-speed data processing, high density circuit integration and widely applied to such fields as ATM, GPS and PCS. Hence we developed the ATM switching module that is consisted of three chips and 2.48 Gbps data throughput, in the form of 10 multi-layer by Cu/Photo-BCB and 491pin PBGA which size is $48 \times 48 \textrm {mm}^2$. hnologies required for the development of the MCM includes extracting parameters for designing the substrate/package through the interconnect characterization to implement the high-speed characteristics, thermal management at the high-density MCM, and the generation of the testability that is one of the most difficult issues for developing the MCM. For the development of the ATM Switching MCM, we extracted signaling delay, via characteristics and crosstalk parameters through the interconnect characterization on the MCM-D. For the thermal management of 15.6 Watt under the high-density structure, we carried out the thermal analysis. formed 1.108 thermal vias through the substrate, and performed heat-proofing processing for the entire package so that it can keep the temperature less than $85^{\circ}C$. Lastly, in order to ensure the testability, we verified the substrate through fine pitch probing and applied the Boundary Scan Test (BST) for verifying the complex packaging/assembling processes, through which we developed an efficient and cost-effective product.

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Growth and Optical Conductivity Properties for BaAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy(HWE)법에 의한 BaAl2Se4 단결정 박막 성장과 광전도 특성)

  • Jeong, Junwoo;Lee, Kijung;Hong, Kwangjoon
    • Journal of Sensor Science and Technology
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    • v.24 no.6
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    • pp.404-411
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    • 2015
  • A stoichiometric mixture of evaporating materials for $BaAl_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaAl_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaAl_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.29{\times}10^{-16}cm^{-3}$ and $278cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaAl_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.4205eV-(4.3112{\times}10^{-4}eV/K)T^2/(T+232 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaAl_2Se_4$ have been estimated to be 249.4 meV and 263.4 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n =1 and $C_{31}$-exciton peaks for n=31.

The Road Map of Animation Festival in Korea through the Comparative Analysis of 4 International Animation Festivals (4대 국제애니메이션영화제 비교분석을 통한 한국애니메이션영화제 발전방향)

  • Choi, Young-Chul;Choi, Seung-Rak
    • Cartoon and Animation Studies
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    • s.25
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    • pp.177-201
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    • 2011
  • This article intends to draw the Road map of Korean International Animation Festival through the research of background and its identity of 4 International Animation Film Festivals Such as Annecy, Zagreb, Ottawa and Hiroshima. I was given opportunity to visit Annecy since 2009, it brought me to the real attraction of animation for watching of pleasure and passion of the people those who love animations. For the combining more advanced system and structure for Animation Festival in Korea, I had to do research all the information from the documents from the Annecy Collections. though I have not get the chance to go others except Annecy, However, I could get their background and history whenever I met the other Festival Committee Members. These Festivals showed us successful Road Map for the Animation Festivals in Korea as a role model. For the getting advanced system of Animation Festivals in Korea. It requires the animation theater for animation, effort for the Audiences's Convenience and international network composition system. However, the last task of us is to make people to entertain and enjoy the animation Films, its world of attraction.