• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제32회 학술대회 초록집
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• pp.109-109
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1233-1236
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• 2005

We report a novel approach for encapsulating of cathode electrodes in DC plasma pixels. Anode and cathode electrodes are laterally placed on a single substrate. The encapsulated electrode minimizes the sputtering of the cathode without significantly altering the turn-on voltage-pressure characteristics. An abnormal glow in current-voltage characteristics is also observed.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.727-730
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• 2003

Thin tin oxide film with nano-size particle was prepared on silicon substrate by hydrothermal synthetic method and successive sol-gel spin coating method. The fabrication method of tin oxide film with ultrafine nano-size crystalline structure was tried to be applied to fabrication of micro gas sensor array on silicon substrate. The tin oxide film on silicon substrate was well patterned by chemical etching upto 5${\mu}{\textrm}{m}$width and showed very uniform flatness. The tin oxide film preparation method and patterning method were successfully applied to newly proposed 2-dimensional micro sensor fabrication.

• 접착 및 계면
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• 제5권2호
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• pp.1-7
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• 2004

A novel carboxyl terminated butadiene-acrylonitrile (CTBN) modified, low temperature cure epoxy film adhesive was developed in this paper. It can be cured at as low as $75^{\circ}C$ for 4 hours with a pressure of 0.1MPa. After post cure at $120^{\circ}C$ for 2 hours, the bonding strengths of Phosphoric Acid Anodizing(PAA) surface treated aluminum adherend were similar to those of structural film adhesives curing at $120^{\circ}C$. It is suitable to bond both metal/composite laminate-to-laminate and laminate to honeycomb structure.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.126-127
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• 2007

In this study, the fabrication technique of a plannar field emission structure with DLC were studied Electric properties of carbon film on silicon substrate in methanol solution was carried out with various current density, solution temperature and electrode spacing between anode and cathode. The DLC film deposited on the Si substrate, plannar $SiO_2$ was obtained due to the shape of bottom electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.120-123
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• 2002

In this study it had an excellent optical characteristic, it followed in the creation rate and the refractive index regulation to the ease. Chalcogenide produced the $As_{45}Se_{45}Te_{10}$ thin film and the $MgF_{2}$ thin film. It measured thin film plan simulation, and the thin film has a 1 -dimensional photonic band gap. The chalcogenide $As_{45}Se_{45}Te_{10}$ thin film was measured with the fact that it has a high refractive index (2.6~2.9). The $As_{45}Se_{45}Te_{10}$ and $MgF_{2}$ thin film, have a high refractive index and a low refractive index, it used a simulation and planed period 5-pairs structure, the result was from 500nm to 800nm. It will be able to confirm the characteristic which most of the incidence light reflects, the He-Ne (632.8nm) laser was irradiated in the thin film which stabilized the thin film. $As_{45}Se_{45}Te_{10}$ (high refractive index layer: H) and $MgF_{2}$ (low refractive index layer: L) results which plans the thin film with glass/LHLHLLHLHL/air structure, 632.8nm against transmitance, increased a lot. An application possibility with the filter against a specific wave length was confirmed.

• 대한화학회지
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• 제38권7호
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• pp.473-479
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• 1994

저압 화학 기상 증착법을 사용하여 $WF_6$의 환원반응으로 텅스텐 박막을 p형 실리콘 (100)표면위에 증착하였다. Cold-wall조건에서는 실리콘 기판과 $SiH_4$를 각각 이용하여 $WF_6$를 환원시켜 텅스텐 박막을 증착하였으며 hot-wall 조건에서는 $WF_6$를 $SiH_4$로 환원시켜 증착하였다. 박막의 결정구조는 어느 조건에서나 체심입방구조를 이루었으며, 증착조건에 따른 박막의 물리적 및 전기적 특성을 조사하였다. 증착된 박막을 온도 $800^{\circ}C$에서 열처리한 결과 hot-wall 조건의 박막이 $WSi_2$로 변화하였다. Hot-wall과 cold-wall조건에서의 박막을 분석한 결과 박막의 특성은 cold-wall조건이 우수하나 hot-wall조건에서는 열처리 방법에 의하여 실리콘 기판과 적합성이 우수한 것으로 알려진 $WSi_2$ 박막의 제조가 가능함을 알 수 있었다.

• 한국환경보건학회지
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• 제21권4호
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• pp.24-31
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• 1995

Gas sensing element, $\alpha-Fe_2O_3$ was synthesized by dehydration, reduction, and oxidation of $\alpha-FeOOH$, which was synthesized with $FeSO_4\cdot 7H_2O$ and NaOH. They were produced as a bulk-type, a thick film-type. Then, their responses and mechanisms of response to the gas of carbon monoxide were studied. The qualities of gas sefising elements are decided by the structure and the relative surface area. In the process of $\alpha-FeOOH$ synthesis, the effects of reaction conditions as the equivalent ratio, on the structure and the relative surface area of gas sensing element were observed. The changes of the structure were measured with XRD, SEM,TG-DTA and BET. The resistance changes of the synthesized gas sensor in the air were measured. The response ratio were also measured for the changes of working temperature and gas concentration. As a result of analysis with XRD, it was confirmed that the the best conditions for the synthesis of $\alpha-FeOOH$ were equivalent ratio 0.65. The thick film-type element of $\gamma-Fe_2O_3$ responded more quickly than the bulk-type did. The structure and the relative surface area of the $\rho-FeOOH$ were confirmed as the important factors deciding gas response charcteristics.

• 한국인터넷방송통신학회논문지
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• 제9권3호
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• pp.173-178
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• 2009

금속산화물 박막 소자를 제작하여 전기적 특성을 조사하였다. 소자는 Electrode를 TOP-TOP구조로 제작하였으며 스위칭 특성을 연구하기 위해 전극간의 산화금속박막의 전도특성이 측정되었다. 소자의 저항변화는 전압을 선형적으로 인가하여 측정하였다. 제작된 소자는 MIM구조로써 외부에서 인가하는 전기적 신호에 의하여 전기전도도가 큰 On-state와 전기전도도가 낮은 Off-state로 바뀌는 특성을 나타내었다. $Si/SiO_2/MgO$ 소자는 Forming에 의해 저항이 큰 상태에서 저항이 작은 상태로 전기적 특성이 변화하면서 스위칭 특성을 보였다. 본 연구를 통하여 산화금속은 차세대 비휘발성 메모리로는 물론 다른 전기적 응용이 기대되는 물질임을 확인하게 되었다.

• 한국결정학회지
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• 제6권2호
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• pp.134-140
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• 1995

Glass/SiNx/ZnO 적층 박막구조의 SAW 특성 변화를 분석하였다. ZnO 박막은 rf magnetron sputter를 이용하여, 산소를 반응성 가스로 Ar과 함께 진공챔버내에 주입시켜 증착하였고, 주로 산소량에 따른 박막의 특성변화를 관찰하였다. 산소분압은 ZnO 박막의 증착속도 및 결정성에 많은 영향을 주고 있었으며, rocking curve의 결과에 의하면 (002) 배향성을 가진 ZnO 박막의 c-축 수직도가 Ar과 산소의 유량비가 67/33에서 가장 좋은 2.17도를 보여주고 있다. 이 값은 ZnO 박막을 압전요소로 사용하기에 충분한 조건이다. SiNx의 두께를 7000Å, ZnO 박막의 두께를 5μm로 한 glass/SiNx/Al/ZnO의 박막 적층 구조의 SAW 특성을 보면 ZnO/glass 구조와 비교시 SAW 속도가 최대 2.2%까지 증가했음을 알 수 있었다.