• 제목/요약/키워드: film resistance

검색결과 2,229건 처리시간 0.028초

텅스텐 전극에 입힌 폴리아닐린의 전기화학적 임피던스 (Electrochemical Impedance Analysis of Polyaniline-Film on Tungsten Electrodes)

  • 천정균;민병훈
    • 대한화학회지
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    • 제40권1호
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    • pp.37-43
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    • 1996
  • 텅스텐을 작업 전극으로 사용하여 순환 전압-전류법으로 합성한 폴리아닐린 막의 전기화학적 임피던스를 0.1M 황산 용액에서 측정하였다. 전기 전도성을 갖는 퍼텐셜 영역에서는 고분자 막의 큰 축전-용량과작은 저항이 직렬로 연결된 전기화학 쎌이 관측되었다. 순수한 텅스텐에 입혀진 폴리아닐린은 접촉 저항을 무시할 수 있었으나, 산화 전극 막이 입혀진 텅스텐의 경우는 산화 전극 막의 저항과 접촉 저항이 관측되었다. 측정된 임피던스 데이터로부터 전극의 등가 회로를 추정하였으며, 이 등가 회로를 토대로 하여 폴리아닐린-막 안에 혼입된 이온의 물질 이동 파라미터를 산출하였다.

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Resistance Distribution in Thin Film Type SFCL Elements with Shunt Layers of Different Thicknes

  • Kim, Hye-Rim;Hyun, Ok-Bae;Lee, Seung-Yup;Yu, Kwon-Kyu;Kim, In-Seon
    • 한국초전도ㆍ저온공학회논문지
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    • 제5권2호
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    • pp.41-45
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    • 2003
  • Resistance distribution in thin film type SFCL elements of different shunt layer thickness was investigated. The 300 nm thick film of 2 inch diameter was coated with a gold layer and patterned into 2 mm wide meander lines. The shunt layer thickness was varied by ion milling the shunt layer with Ar ions, and also by having the shunt layer grown in different thickness. The SFCL element was subjected to simulated AC fault current for measurements. It was immersed in liquid nitrogenduring the experiment. The resistance distribution was not affected by the shunt layer thickness at applied voltages that brought the temperature of the elements to similar values. This result could be explained with the concept of heat transfer from the film to the surroundings. The resistance distribution was independent of the shunt layer thickness because thick sapphire substrates of high thermal conductivity dominated the thermal conductance of the elements.

플라즈마 전해산화법에 의해 형성된 알루미늄 합금의 양극산화피막 내마모 특성에 관한 연구 (A Study on the Wear Resistance Characteristics of Anodic Oxide Films Formed on Aluminium alloy using a Plasma Electrolytic Oxidation)

  • 정우철;진연호;최진주;양재교
    • 한국표면공학회지
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    • 제51권6호
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    • pp.381-386
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    • 2018
  • In this study, plasma electrolytic oxidation (PEO) method was used to from anodic oxide films on Al alloy and their resistance and morphological characteristics were investigated as a function of film formation voltage and treatment time. Cross-sectional morphology and composition of the PEO films were analyzed by SEM (Scanning Electron Microscopy) and EDS (Energy Dispersive Spectroscopy). The PEO films showed increased surface roughness and thickness with of film formation voltage and treatment time. The wear resistance was found to be the best for the PEO film formed for 5 min at 500V which is attributed to be denser structure relatively and lower surface roughness.

이중절연 자기융착테이프 제조기술 (Manufacturing technology of two-layer self bonding insulating tape)

  • 조용석;이철호;심대섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.890-893
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    • 2001
  • Two-layer self bonding insulating tape consists of butyl rubber(IIR ; Isobutylene-isoprene rubber) adhesive layer and polyethylene protective film. Butyl rubber have inherent characteristics such as resistance to corrosion and water, low temperature flexibility, excellent electrical insulating properties also resistance to environmental effect such as ozone and ultraviolet. Polyethylene film was used for the purpose of good insulating properties and resistance to ozone and ultraviolet. The tape was manufactured using extrusion and calender method.

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비정질 칼코게나이드 반도체 박막 경계면의 전기적 특성 (Electrical characteristics of the this film interface of amorphous chalcogenide semiconductor)

  • 박창엽
    • 전기의세계
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    • 제29권2호
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    • pp.111-117
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    • 1980
  • Contacts formed by vacuum evaporation of As-Te-Si-Ge chalcogenide glass onto Al metal (99.9999%) are studied by measuring paralle capacitance C(V), Cp(w), resistance R(V), Rp(w), and I-V characteristics. The fact that contact metal alloying produced high-resistance region is confirmed from the measurements of parallel capacitance and resistance. From the I-V characteristics in the pre-switcing region, it is found that electronic conduction and sitching occurs in the vicinity of metal-amorphous semiconductor interface. From the experimental obsevations, it is concuded that the current flow in the thin film is space-charge limited current (SCLC) due to the tunneling of electrons through the energy barriers.

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NiCr 박막저항의 전기적 특성 연구 (The study on electrical properties of the NiCr thin film resistor)

  • 류제천;김동진;김용일;강전홍;김한준;유광민
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.275-278
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    • 2000
  • We were fabricated of NiCr thin film resistors(TFR) on A1$_2$O$_3$(99.5%) substrates by dc magnetic sputtering system. The characteristics of electrical resistance (Sheet resistance & Temperature-Coefficient of the resistance-value:TCR) by annealing condition and reactive gas on the resistors were studied.

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Improvement of Adhesion Strength of DLC Films on Nitrided Layer Prepared by Linear Ion Source

  • Shin, Chang-Seouk;Kim, Wang-Ryeol;Park, Min-Seok;Jung, Uoo-Chang;Chung, Won-Sub
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.177-179
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    • 2011
  • The purpose of this study is to enhance an adhesion between substrate and Diamond-like Carbon (DLC) film. DLC has many outstanding properties such as low friction, high wear resistance and corrosion resistance. However, it is difficult to achieve enough adhesion because of weak bonding between DLC film and the substrate. For improvement adhesion, a layer between DLC film and the substrate was prepared by dual post plasma. DLC film was deposited on nitrided layer by linear ion source. The composed compound layer between substrate and DLC film was investigated by Glow Discharge Spectrometer (GDS) and Scanning Electron Microscope (SEM). The synthesized bonding structure of DLC film was analyzed using a micro raman spectrometer. Mechanical properties were measured by nano-indentation. In order to clarify the mechanism for improvement in adhesive strength, it was observed by scratch test.

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강재의 마그네타이트 피복에 관한 연구 (Magnetite film on iron)

  • 김헌규;강탁
    • 한국표면공학회지
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    • 제25권2호
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    • pp.66-72
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    • 1992
  • Magnetite film on iron surface could be coated in strongly alkaline solution (12M NaH\OH) which contained additives such as NaHCO3, KCl and NaNO2, Iron plate was immersed in boiling solution ($130^{\circ}C$) contained above mentioned additives for 1 hour. There are some microcracks and these cracks proved to be the sites for the initiation of corrosion when immersed in 3% NaCl solution. To improve corrosion resistance of the coated steel plate, chromating was done as a post treatment. Chromate film was formed on magnetite oxide film potentiostatically at-918mV/SCE for five minutes at temperature of $70^{\circ}C$ in the alkaline solution containing 5g/l Na2Cr2O7.2H2O.Cr3O4 was electrodeposited on magnetite oxide film and Cr2O3 was electrodeposited on iron surface which was assumed as surface revealed due to microcracks. Increased corrosion resistance of chromated magnetite oxide film was proved in salt spray test & immersion test.

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Preparation of a Semi-Conductive Thin Film Sensor for Measuring Occlusal Force

  • Yu, Siwon;Kim, Nari;Lee, Youngjin
    • 센서학회지
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    • 제24권2호
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    • pp.88-92
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    • 2015
  • In order to study the semi-conductive characteristics of carbon black-filled ethylene-propylene-diene monomer (EPDM) composite film, which is used for measuring occlusal force, composite samples with volume ratios of carbon black to EPDM ranging from 30% to 70% were prepared. The process of making a composite film consists of two steps, which involve the preparation of a slurry composition and the fabrication of a thin film using solution casting and a lamination process. To prepare the slurry composition, we dispersed carbon black nanoparticles into an organic solvent before mixing with an EPDM solution in toluene. The mechanical and electrical properties of the resulting carbon black-filled EPDM film were then investigated, and the results showed that the electrical resistance of a film decreases with the increase in the carbon black content. Furthermore, improved elastic recovery was observed after cross-linking the EPDM.

Transparent ITO/Ag/i-ZnO Multilayer Thin Film enhances Lowing Sheet Resistance

  • Kim, Sungyoung;Kim, Sangbo;Heo, Jaeseok;Cho, Eou-Sik;Kwon, Sang Jik
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.187-187
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    • 2015
  • The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

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