• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.155-158
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• 2002

Eu-doped lead zirconium titanate $Pb_{1.1}(Zr_{0.3}Ti_{0.7})O_{3}$ thin films on the Pt/Ti/$SiO_2$/Si substrates prepared by a metalorganic decomposition (MOD) method. The effect on the structural and electrical properties of the films measured according to Eu content. Eu-doping altered significantly the dielectric and ferroelectric properties. The remanent polarization and coercive field decreased with increasing the concentration of Eu content. The dielectric constant and dielectric loss of the film decreased with increasing Eu contents. The 3 mol% of Eu-doped PZT thin film showed large remanent polarization and the fatigue characteristic of the film did not change up to $10^9$ switching cycles.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.266-272
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• 2000

Sputtered $MoS_2$ thin films provide lubrication and wear improvements for vacuum and space applications. In this study, deposition of $MoS_2$ thin films by R.F. magnetron sputtering was studied with regard to the micro-structural change of $MoS_2$ film and mechanical properties. The coating parameters such as the working pressure, the RF power, the substrate temperature, the etching time were varied to determine how these parameters affected the film morphology and mechanical properties of deposited films. The best wear properties and critical load were observed with the film deposited at $70^{\circ}C$, 1.0$\times$$10^{ -3}$ Torr, 170W and 1 hour deposition time. The critical load increased with the increase of sputter etching time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

• The korean journal of orthodontics
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• v.21 no.1 s.33
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• pp.7-16
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• 1991

To estimate the possibility of the application of TiN ion-plating to the orthodontic appliance, colorimetric properties, and characteristics of ion-plated film as well as adhesive strength of TiN film to the substrate and mechanical properties of ion-plated orthodontic appliance were investigated. The obtained results were as follows: 1) TiN ion-plated film had the colorimetric properties which were the hue of about 2.5 Y, the brightness of about 6, and the chroma of about 4 by the standard color chip of JIS. 2) TiN ion-plated film was $2{\mu}m$ in thickness and its deposition pattern was rather irregular. 3) TiN phase was confirmed on the X-ray diffraction pattern. 4) Critical load for delamination of ion-plated film from stainless steel band was 10N. 5) Tensile and yield strength of ion-plated specimen was increased about 10Kg $f/mm^2$, while elongation was decreased $1\%$ compairing to the values of the non ion-plated specimen.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1838-1840
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• 1996

In order to study the relationship between the physical properties of glow discharge plasma and the physical behavior of TiN thin film, electrical characteristics of RF discharge plasma driven at 13.56MHz in a parallel-plate electrode system were measured. Plasma parameters, such as electron density and temperature, are also studied since they may be considered as one of the very important factors deciding the physical properties of TiN thin film under given conditions of applied biasd voltage and pressure. The TiN thin film were fabricated over a wide range of discharge conditions, and some of the general relationships between the measured plasma parameters and the properties of TiN thin film were discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.234-240
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• 2001

Using RF magnetron sputtering, amorphous carbon(a-C) thin films as electron filed emitter were fabricated. these a-C thin films were deposited on Si(001) substrate at several temperatures. The field electron emission property of these a-C thin films was estimated by a diode technique. As the result, we observed that the field emission properties of the films were changed singnificantly with the substrate temperature and structural features of a-C film. The field emission properties were promoted by higher substrate temperatures. Furthermore N-doped a-C film exhibits more field emission property than that of undoped a-C film. These results are explained as change of surface morphology and structural properties of a-C film.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• Journal of the Korean institute of surface engineering
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• v.26 no.2
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• pp.45-54
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• 1993

In this study, magnetic properties of anodized Al film deposited with ferro-magnetic metals in the capacity of perpendicular magnetic recording media were measured and evaluated to find out the role of structure and morphology of the oxide films on magnetic characteristics. The object of this work was to present the conditions of magnetic thin film formation with more superior magnetic property. Anodizing was carried out under various conditions, and then the anodized film were electro-deposited with Co, Ni, Fe and their alloys. Coercive force and residual magnetization in perpendicular direction increased as the pore length of anodized film increased. It was attributed to the increase of the amount of depoisted metals and the ratio of length/diameter of pores. Morphology of anodized films in phosperic acid was not similar to that of sulfuric acid, and thin films in the former solution had perpendcular magnetic anisostropy because of large diameter, irregular length and distribution of the pores. It was found that magnetic properties of the thin films, which had doubled layer of two metals, were dominated by the metal electrodeposited on the surface of the anodized oxide films.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.713-718
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• 1997

Polyaniline free standing films cast from N-methyl-2-pyrrolidinone(NMP) solution, camphorsulfonic acid(HCSA), dodecylbenzensulfonic acid(HDBSA), inorganic matter(carbon black, graphite) and metal(silver) were prepared by processings. The properties of these films such as crystallinity, near-infrared absorption spectra and conductivity were investigated. The HCSA and HDBSA doped polyaniline films cast from m-cresol and chloroform solvents showed the metallic property and high crystallinity, respectively. The value of conductivity in the HCSA doped polyaniline film obtained 180 S/cm. We have obtained the value of conductivity 200 S/cm in the metal(silver) doped polyaniline film, which is higher than that of the HCSA doped polyaniline film. The metal(silver) doped polyaniline film shows good properties as a electromagnetic shielding material.

• Journal of Korea Multimedia Society
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• v.25 no.6
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• pp.866-877
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• 2022

With respect to the advent of realistic media, the so-called future cinema theory or the theory of the end of cinema that cinema will be transformed by the advent of realistic media, or that realistic media will expel film media and replace them are being put forward as if they were orthodoxy. Therefore, this paper argues that the future cinematic theory and the theory of the end of cinema the cinema are inferred from the false premise that the superiority and inferiority relationship and substitute relationship established only between video media of the same type with the same properties are also established even between realistic media and film media, which have different properties. And it is concluded that realistic media and film media will coexist because they have different properties, functions, uses, and utilities.