• International Journal of Industrial Entomology and Biomaterials
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• v.26 no.2
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• pp.113-118
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• 2013

In this study, silk sericin films were prepared using different extraction methods, and the molecular conformation of sericin was examined using Fourier-transform infrared spectroscopy with attenuated total reflection geometry. Additionally, the effect of the film side (air-facing side or plate-facing side) on the molecular conformation of the sericin films was investigated. Interestingly, the molecular conformation of the sericin film depended on the film side. The molecular conformation of air-facing side of the sericin film was significantly influenced by extraction solution and time. The ${\beta}$-sheet crystallization and the crystallinity index of the sericin film markedly increased with an increase in the extraction time in hot water. The order of the crystallinity indices for the sericin films obtained with different extraction solutions was as follows: citric acid solution > urea solution >> hot water. In contrast, no remarkable differences were observed in the molecular conformation of the plate-facing side of the sericin film after extraction in hot water for different time periods. Urea and citric acid solution extractions showed remarkably higher crystallinity indices for sericin than those obtained after hot water extraction. However, no significant differences were observed in the crystallinity index of sericin between urea and citric acid solution extraction in plate-facing side of the film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.255-260
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• 1998

Behavior of solid phase crystallizations (SPC) of RF sputtered and LPCVD amorphous hydrogenated silicon film were investigated. LPCVD films showed the higher degree of crystallinity and larger grain size than sputtered films. The applicable degree of crystallinity was also obtained from sputtered films. The deposition method of amorphous silicon film influenced the behavior of post annealing SPC. Observed degree of crystallinity of sputtered films strongly depended on the partial pressure of hydrogen in deposition. The higher deposition temperature of sputtering provided the better crystallinity after SPC. Due to the high degree of poly-crystallinity, the retardation of larger grain growth was observed on sputtering film.

• International Journal of Industrial Entomology and Biomaterials
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• v.37 no.2
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• pp.36-42
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• 2018

Recently, silk sericin has attracted attention because of its unique properties as a biomaterial, including its UV resistance, moisturizing effect on skin, and wound-healing effect. Therefore, the preparation of sericin in various forms such as gel, film, fiber, and sponge is studied for cosmetic and biomedical applications, and the effect of the preparation conditions on the structure and properties of sericin forms is examined to maximize its performance. In this study, silk sericin films were prepared under different preparation conditions and heat-treated at high temperatures ($100-250^{\circ}C$) to examine the effect of heat treatment on the film structure. The order of the crystallinity index of the untreated sericin film is as follows: F25 (sericin film cast from formic acid) > WE25 (ethanol treated sericin film cast from water at $250^{\circ}C$) > W25 (sericin film cast from water at $250^{\circ}C$) > W100 (sericin film cast from water at $100^{\circ}C$). As the heat-treatment temperature was increased, the color of the sericin films changed gradually from colorless to yellow, brown, and black depending on the temperature. The crystallinity of the sericin film changed after the heat treatment, depending on the preparation condition. Whereas a sericin film cast from formic acid (F25) started to lose its crystallinity at $200^{\circ}C$, thus undergoing the highest loss of crystallinity among the sericin films studied, the rest (W25, WE25, and W100) showed a decrease in crystallinity at $250^{\circ}C$, owing to the disruption of the ${\beta}$-sheet crystallites due to heat.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.110-115
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• 1997

Li-doped ZnO films were prepared on Corning 1737 glass substrate by an rf magnetron sputtering technique using ZnO targets with various $Li_2CO_3$ contents ranging from 0 to 10 mol%. The effects of Li doping on the crystallinity and electrical properties of ZnO films were studied for their SAW filter applications. The film resistivity largely increased without suppressing the c-axis orientation and crystallinity with a small addition of Li. Heat treatment of the film at 40$0^{\circ}C$ induced that the film resistivity, c-axis orientation and crystallinity slightly increased. However, heat treatment of the film at 50$0^{\circ}C$ resulted in much lower resistivity than that of as-deposited film due to the increase of electron concentration caused by the evaporationof Li atoms from the ZnO film. Large addition of Li into the ZnO film rather diminished the film resistivity and suppressed the c-axis growth. It was concluded that a small doping of Li into the ZnO film and heat treatment at 40$0^{\circ}C$ caused the film resistivity to be high enough for SAW filter applications without suppression of the c-axis orientation and crystallinity.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.403-406
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• 2012

Effect of thickness on ZnO properties including the compositional ratio and crystallinity has been systematically investigated using a variety of characterization tools of x-ray diffraction, field emission scanning electron microscopy, x-ray fluorescence and x-ray photoelectron spectroscopy. Interestingly, it was observed that ZnO films below 80 nm in thickness were in oxygen deficiency, while the oxygen ratio was increased in the films above the thickness, although the compositional ratio of ZnO film was not linearly varied with increasing film thickness. Also, ZnO crystallinity, which is characterized by (002) diffraction pattern, was clearly improved with increasing film thickness. The properties of ZnO film with different sputtering time and the nature of direct current reactive sputtering process were discussed in terms of compositional ratio, especially oxygen ratio in ZnO film.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.713-718
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• 1997

Polyaniline free standing films cast from N-methyl-2-pyrrolidinone(NMP) solution, camphorsulfonic acid(HCSA), dodecylbenzensulfonic acid(HDBSA), inorganic matter(carbon black, graphite) and metal(silver) were prepared by processings. The properties of these films such as crystallinity, near-infrared absorption spectra and conductivity were investigated. The HCSA and HDBSA doped polyaniline films cast from m-cresol and chloroform solvents showed the metallic property and high crystallinity, respectively. The value of conductivity in the HCSA doped polyaniline film obtained 180 S/cm. We have obtained the value of conductivity 200 S/cm in the metal(silver) doped polyaniline film, which is higher than that of the HCSA doped polyaniline film. The metal(silver) doped polyaniline film shows good properties as a electromagnetic shielding material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.89-93
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• 1995

Effects of hydrogenation in amorphous silicon rile growths on Solid Phase Crystallization (SPC) was investigated using x-ray diffractometry, energy dispersive Spectroscopy, and Raman spectrum. Interdiffusion of barium(Ba) and aluminum(Al) compounds of corning substrate was observed in both of rf sputtering and LFCVD films under the low temperature(580$^{\circ}C$) annealing. Low degree of crystallinity resulted from the interdiffusion was obtained. Highly applicable degree of crystallinity was obtained through the mechanical damage induced surface activation on amorphous silicon films. X-ray diffraction intensity of (111) orientation was used to characterize the degree of crystallinity of SPC. Nucleation and growth rate in SPC could be controllable through the employed surface treatment. IIydrogenated LPCVD films showed the superior crystallinity to non-hydrogenated sputtering films. Insignificant effects of activation treatment in sputtered film was of activation treatment in sputtered film was observed on SPC.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1490-1492
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• 1998

The methastable state diamond films have been deposited on Si substrates using MWPCVD. Effects of each experimental parameters of MWPCVD including $CH_4$ conentrations, Oxygen additions, Operating pressure, etc. on the growth rate and crystallinity were invesitigated. The best crystallinity of the film at 3% methane concentration addition of oxygen to the $CH_4-H_2O$ mixture gave an improved film crystallinity at 50% oxygen concentration. Upon increasing the operating pressure, the growth rate and crystallinity were increased simultaneously.

• Progress in Superconductivity and Cryogenics
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• v.23 no.4
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• pp.1-5
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• 2021

Among elemental metals, niobium (Nb) has the highest superconducting transition temperature (T_c) at ambient pressure. Thus, Nb films have been used in superconducting electronics and radio frequency cavity applications. In this study, the depositional factors determining the crystallinity and T_c of Nb films were investigated. An Nb film grown at a sputtering temperature of 240℃ exhibited the maximum crystallinity of Nb and the minimum crystallinity of niobium oxide. X-ray photoelectron spectroscopy confirmed a maximum atomic percent of niobium and a minimum atomic percent of oxygen. A sputtering power of 210 W and a sputtering time of 50 min were the optimal conditions for Nb deposition, and the T_c of the optimized film (9.08 K) was close to that of bulk Nb (9.25 K). Transmission electron microscopy images of the thick film directly confirmed the removal of the typical in-plane compressive strain in the (110) plane caused by residual stress.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.733-739
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• 1998

C-axis oriented zinc oxide thin films were deposited on Cornign 1737 glass substrate by an rf magnetron sputtering technique. The effects of deposition parameters and post heat-treatment on the crystallinity and electical properties of ZnO films were investigaed. As-deposited ZnO films showed the strong c-axis growth and excellent crystallinity under the deposition conditions as follows: substrate temperature 350$^{\circ}C$ ; growth and excellent crystallinity under the deposition conditions as follows ; substrate temperature 350$^{\circ}C$ rf power 75W ; gas pressure 6m Torr; percentage of oxygen 50% The higher heat-treating temperatue was the stronger c-axis growth and the better crystallinity of the deposited ZnO films were. The resistivity of ZnO films was significantly affected by deposition parameters and post heat-treatment. With increasing increased. After post heat-treating at 400$^{\circ}C$ in air the resistivity of ZnO films increased but post heat-treat-ing temperature 500$^{\circ}C$ rather diminished the film resistivity.