• Korean Journal of Heritage: History & Science
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• v.54 no.4
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• pp.22-35
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• 2021

Recently, as the climate changes rapidly and the prevalence of airborne fine particulate matter increases, the pattern of pollutants in the atmospheric environment is also changing. Therefore, the importance of studying the stability of pigments used in colored cultural properties is emerging. Hoecheong is an inorganic blue glass pigment called smalt; it is made by using cobalt as a coloring element in potash glass, and was widely used in colored cultural assets, such as murals and paintings. In this study, we collected three other hoecheong pigments to analyze their properties. The percentage of Co and K contained are different according to the manufacturer, and the smalt-3 sample has a lower cobalt content (15.1 wt.%) and higher potassium content (29.6 wt.%). After this analysis, colored specimens were prepared. Prepared specimens were exposed to ultra-violet rays, CO₂/NO₂, and NaCl, which are known to have the greatest influence on the stability of pigments. We found that factors affecting the color stability were NO₂ gas, ultra-violet rays, and water-soluble salts (NaCl). Among them, NO₂ has the most severe impact on color change of the pigments. Results of the component analysis showed that the color change depends on the potassium and cobalt content of the hoecheong pigment. Among the specimens, smalt-3 showed the most vulnerability after exposure to NO₂ gas and water-soluble salts. Pigment film stability is affected by watersoluble salts, giving rise not only to color change, but also weakening the physical properties of the film. However, there was no significant change in composition and color after exposure to CO₂ gas. In conclusion, we found that hoecheong pigments underwent color change and increased instability of the coating film when exposed to any of the atmospheric environmental factors used in this study, except for CO₂.

• Solar Energy
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• v.10 no.3
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• pp.60-65
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• 1990

[ $n^+-p^+$ ] InP homojunction solar cells were fabricated by thermal diffusion of sulphur into a $p^+$-InP wafer($p=4{\times}10^{18}cm^{-3}$), and a SiO film($600{\AA}$ thick) was coated on the $n^+$ layer as an antireflection(AR) coating by an e-beam evaporator. The volume of the cells were $5{\times}5{\times}0.3mm^3$. The front contact grids of the cells with 16 finger pattern of which width and space were $20{\mu}m$ and $300{\mu}m$ respectively, were formed by photo-lithography technique. The junction depth of sulphur were as shallow as about 0.4r m We found out the fabricated solar cells that, with increasing the diffusion time, short circuit current densities($J_{sc}$), series resistances($R_s$) and energy conversion efficiencies(${\eta}$) were increased. The cells show good spectral responses in the region of $5,000-9,000{\AA}$. The short circuit current density, the open circuit voltage( $V_{oc}$), the fill factor(F.F) and the energy conversion efficiency of the cell were $13.16mA/cm^2$, 0.38V, 53.74% and 10.1% respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.251-252
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• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• Polymer(Korea)
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• v.36 no.6
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• pp.810-815
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• 2012

The cation exchange polymer, poly(styrene sulfonic acid) (PSSA), was coated onto polyamide (PA) thin film composite reverse osmosis (RO) membranes. Then these membranes were investigated for the model foulants, bovine serum albumin (BSA), humic acid (HA), and sodium alginate (SA) to check whether there are some improvement. The contact angle of PSSA coated PA RO membrane showed $58^{\circ}$ from $78^{\circ}$, the value of PA RO membrane, which confirmed successful hydrophilization. As the operating pressure increased (2, 4, 8 atm for BSA, HA and SA 100 ppm in feed solution), the fouling phenomena was worse for both none- and PSSA-coated membranes. The fouling increased in the order of BSA>SA>HA due to the interactions between sulfonic acid in PSSA and functional groups of foulants. On the other hand more significant fouling reduction was observed in the order of HA>SA>BSA. The photographs of scanning electron microscopy showed the same trend. As a result, there was the improvement of fouling phenomena for the PSSA coated RO membranes, distinctly in the case of HA.

• Membrane Journal
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• v.22 no.4
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• pp.272-279
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• 2012

The neutral polymer, poly (vinyl alcohol) (PVA), was coated onto polyamide (PA) thin film composite reverse osmosis (RO) membranes. And then these membranes were investigated for the model foulants, bovine serum albumin (BSA), humic acid (HA), and sodium alginate (SA) whether there are aome improvement. As the operating pressure increased with 2, 4, 8 atm for BSA, HA and SA 100 ppm in feed solution, the fouling phenomena was worse for both none and PSSA coated membranes. The fouling occurred in the sequence of BSA > HA > SA due to the interactions between PVA snd functional groups of foulants, and on the other hand the fouling reduction was observed in the order of HA > BSA > SA. The observation of scanning electron microscopy photographs showed the same trend. As a result, there should be the improvement of fouling phenomena for the PVA coated RO membranes and the case of HA was shown distinct.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.7-15
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• 2004

The ferroelectric SBT thin films as a material of capacitors for non-volatile FRAMs have some problems that its remanent polarization value is relatively low and the crystallization temperature is quite high abovc 80$0^{\circ}C$. Therefore, in this paper, SBTN solution with S $r_{0.9}$B $i_{2.1}$T $a_{1.8}$N $b_{0.2}$$O_{9}$ composition was synthesized by sol-gel method. Sr(O $C_2$ $H_{5}$)$_2$, Bi(TMHD)$_3$, Ta(O $C_2$ $H_{5}$)$_{5}$and Nb(O $C_2$ $H_{5}$)$_{5}$ were used as precursors, which were dissolved in 2-methoxyethanol. SBTN thin films with 200 nm thickness were deposited on Pt/Ti $O_2$/ $SiO_2$/Si substrates by spin-coating. UV-irradiation in a power of 200 W for 10 min and rapid thermal annealing in a 5-Torr-oxygen ambient at 76$0^{\circ}C$ for 60 sec were used to promote crystallization. The films were well crystallized and fine-grained after annealing at $650^{\circ}C$ in oxygen ambient. The electrical characteristics of 2Pr=11.94 $\mu$C/$\textrm{cm}^2$, Ps＋/Pr＋=0.54 at the applied voltage of 5 V were obtained for a 200-nm-thick SBTN films. This results show that 2Pr values of the UV irradiated and rapid thermal annealed SBTN thin films at the applied voltage of 5 V were about 57% higher than those of no additional processed SBTN thin films. thin films.lms.s.s.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.5
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• pp.475-480
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• 2017

In this paper, the conductivity of the fine pattern is improved in the insulating substrate by laser-induced forward transfer (LIFT) process. The high laser beam energy generated in conventional laser induced deposition processes induces problems such as low deposition density and oxidation of micro-patterns. These problems were improved by using a polymer coating layer for improved deposition accuracy and conductivity. Chromium and copper were used to deposit micro-patterns on silicon wafers. A multi-pulse laser beam was irradiated on a metal thin film to form a seed layer on an insulating substrate(SiO2) and electroless plating was applied on the seed layer to form a micro-pattern and structure. Irradiating the laser beam with multiple scanning method revealed that the energy of the laser beam improved the deposition density and the surface quality of the deposition layer and that the electric conductivity can be used as the microelectrode pattern. Measuring the resistivity after depositing the microelectrode by using the laser direct drawing method and electroless plating indicated that the resistivity of the microelectrode pattern was $6.4{\Omega}$, the resistance after plating was $2.6{\Omega}$, and the surface texture of the microelectrode pattern was uniformly deposited. Because the surface texture was uniform and densely deposited, the electrical conductivity was improved about three fold.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.631-635
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• 2017

We report facile solution processing of mesoporous hematite (${\alpha}-Fe_2O_3$) thin films for high efficiency solar-driven water splitting. $Fe_2O_3$ thin films were prepared on fluorine doped tin oxide(FTO) conducting substrates by spin coating of a precursor solution followed by annealing at $550^{\circ}C$ for 30 min. in air ambient. Specifically, the precursor solution was prepared by dissolving non-toxic $FeCl_3$ as an Fe source in highly versatile dimethyl sulfoxide(DMSO) as a solvent. The as-deposited and annealed thin films were characterized for their morphological, structural and optical properties using field-emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and UV-Vis absorption spectroscopy. The photoelectrochemical performance of the precursor (${\alpha}-FeOOH$) and annealed (${\alpha}-Fe_2O_3$) films were characterized and it was found that the ${\alpha}-Fe_2O_3$ film exhibited an increased photocurrent density of ${\sim}0.78mA/cm^2$ at 1.23 V vs. RHE, which is about 3.4 times higher than that of the ${\alpha}-FeOOH$ films ($0.23mA/cm^2$ at 1.23 V vs. RHE). The improved performance can be attributed to the improved crystallinity and porosity of ${\alpha}-Fe_2O_3$ thin films after annealing treatment at higher temperatures. Detailed electrical characterization was further carried out to elucidate the enhanced PEC performance of ${\alpha}-Fe_2O_3$ thin films.

• Polymer(Korea)
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• v.30 no.3
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• pp.230-237
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• 2006

Copolymers(HSA-98-20, HSA-98-0, HSA-98+20) which we acrylic resin containing 80% solid content were synthesized by the reaction of monomers, including methyl methacrylate, n-butyl acrylate, and 2-hydroxyethyl acrylate with a functional monomer, acetoacetoxyethyl methacrylate (AAEM), which nay give improvements in cross-linking density and physical properties of films. The physical properties of prepared acrylic resins, containing AAEM, are as follows viscosities, $1420\sim5760cps$ ; number average molecular weight, $2080\sim2300g/mol$; polydispersity index, $2.07\sim2.19$ ; and conversions, $88\sim93%$. In the next step, high-solid coatings (HSA-98-20C, HSA-98-0C, HSA-98+20C) were prepared by the curing reaction between acrylic resins containing 80% solid content and isocyanate at room temperature. Various properties were examined on the film coated with the prepared high-solid coatings. The introduction of AAEM to the coatings enhanced the abrasion resistance and solvent resistance, which indicated the possible use of high- solid coatings for top-coating materials of automobile. Since the curing by viscoelastic measurement occurred in sequence of HSA-98+20C > HSA-98-0C > HSA-98-20C, it was concluded that the curing rates became faster with incresing $T_g$ values.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.51-54
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• 2007

By substituting Cr in inverse-spinel $Fe_3O_4,\;Cr_xFe_{3-x}O_4$ thin film samples were prepared by sol-gel spin-coating method and their structural electronic, and magnetic properties were analyzed. X-ray diffraction indicates that the lattice constant decrease with increasing Cr composition (x). This result can be explained in terms of occupation of octahedral sites by $Cr^{3+}$ ions with smaller ionic radius than that of $Fe^{3+}$ Vibrating sample magnetometry measurements on the samples at room temperature revealed that saturation magnetization ($M_s$) decrease by Cr substitution, explainable by comparing spin magnetic moment among the related transition-metal ions. A decrease of magnetoresistence effect with x was observed, similar to that of $M_s$. The coercivity of the $Cr_xFe_{3-x}O_4$ films was found to increase with x, attributed to the increase of magnetic anisotropy by the existence of octahedral $Cr^{3+}(d^3)$.