• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.386-386
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• 2011

탄소나노튜브는 큰 길이 대 직경 비와 뛰어난 전기적 특성으로 인해 차세대 전계 방출 소자로 주목 받고 있다. 실질적인 전계방출 디스플레이로의 응용을 위한 대면적 제작과 유리 기판 사용을 위해 이용되었던 페이스트(paste)법은 높은 전기장 하에서 장시간 전계방출시 탄소나노튜브 전계방출원과 페이스트(paste)간의 낮은 접착력 때문에 발생하는 탄소나노튜브의 탈루현상(omission)과 유기물질(organic paste)에서 발생하는 탈기체(out-gassing) 문제점이 있었다. 최근 이런 문제점을 개선하기 위해 유기물질(organic paste)를 대체하여 금속바인더(metal binder) 물질을 사용한 결과들이 보고되고 있다. 본 연구에서는 유리기판 위에 제작된 탄소나노튜브 전계방출원의 수명 향상을 위하여 금속바인더와 후속 열처리법의 변화에 따른 전계방출 안정성을 분석하였다. 금속바인더는 접합층/ 접착층(soldering layer/ adhesive layer)으로 구성되어 있으며, 일반적인 소다석회유리(soda-lime glass)에 스퍼터(DC magnetron sputtering system)를 이용하여 증착하였다. 접착층은 유리기판과 접합층의 접착력 향상을 위해 사용되며, 접합층은 기판과 탄소나노튜브 전계방출원을 접합하는 역할과 전계방출 측정시 전극이 되기 때문에 우수한 전기 전도성과 내산화성을 필요로 한다. 본 실험에서는 일반적으로 유리기판과 접착력이 좋다고 알려진 Cr, Ti, Ni, Mo을 접착층으로 사용하였으며, 접합성과 전기전도성, 내산화성이 뛰어난 귀금속 계열의 금속을 접합층으로 사용하였다. 탄소나노튜브를 1,2-디클로로에탄(1,2-dichloroethane, DCE)에 분산시킨 용액을 스프레이방법을 이용하여 증착시켰으며, 후속 열처리 방법을 통하여 접합층과 결합시켰다. 금속바인더와 후속 열처리법의 변화에 따른 접착력과 표면형상(morphology)의 변화를 주사전자현미경(scanning electron microscopy)를 이용하여 분석하였으며, 다이오드 타입에 디씨 바이어스(DC bias)를 사용하여 전계방출특성을 측정하였다[1,2].

• Current Photovoltaic Research
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• 제3권3호
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

• 한국표면공학회지
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• 제51권3호
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• pp.139-148
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• 2018

In this study, surface analysis of Ni-Cr and Co-Cr alloys with addition of Ti and Mo for dental CAD/CAM use has been researched experimentally. The surface characteristics of the alloys were examined by Vickers hardness test, bonding strength test, surface roughness test, field-emission scanning electron microscopy, energy dispersive X-ray spectroscopy, and X-ray diffraction spectroscopy. The shrinkage of the sintered Ni-Cr alloy alloy was slightly larger than that of Ni-Cr-Ti alloy, and larger than Co-Cr alloy. Also, the addition of Mo showed a tendency to decrease shrinkage somewhat. From the result of XRD analysis, NiCr, $Ni_3Cr$ and $Ni_3Ti$ were observed in the sintered Ni-13Cr-xTi and Ni-13Cr-xMo alloys. In addition, ${\sigma}-CrCo$, $Co_2Mo_3$ and $TiCo_2$ were formed in the sintered Co-Cr-xTi and Co-Cr-xMo alloys. Surface hardness of Ti and Mo added alloy was higher than those of Ni-Cr and Co-Cr alloy. The bond strength between sintered alloy and porcelain was $16.1kgf/mm^2$ for Ni-13Cr alloy, $17.8kgf/mm^2$ for Ni-13Cr-5Ti alloy, and $8.2kgf/mm^2$ for Ni-13Cr-10Ti alloy, respectively.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.74-74
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• 2018

Ti-6Al-4V alloys have been widely used as orthopedic materials because of their excellent corrosion resistance and mechanical properties. However, it does not bind directly to the bone, so it requires a surface modification. This problem can be solved by nanotube and micropore formation. Plasma electrolytic oxidation (PEO) treatment for micropore, which combines high-voltage spark and electrochemical oxidation, is a new way of forming a ceramic coating on light metals such as titanium and its alloys. This method has excellent reproducibility and can easily control the shape and size of the Ti alloy. In this study, formation of bioactive surface by PEO-treatment after $2^{nd}$ ATO technique of Ti-6Al-4V alloy was invesgated by various instrument. Nanotube oxide surface structure was formed on the surface by anodic oxidation treatment in 0.8 wt.% NaF and 1M $H_3PO_4$ electrolytes. After nanotube formation, nanotube layer was removed by ultrasonic cleaning. PEO-treatment was carried out at 280V for 3 minutes in the electrolytic solution containing the bioactive substance (Mg, Zn, Mn, Sr, and Si). The surface of Ti-6Al-4V alloy was observed by field emission scanning electron microscopy (FE-SEM, S-4800 Hitachi, Japan). An energy dispersive X-ray spectrometer (EDS, Inca program, Oxford, UK) was used to analyze the spectra of physiologically active Si, Mn, Mg, Zn, and Sr ions. The PEO film formed on the Ti-6Al-4V alloy surface was characterized using an X-ray diffractometer (TF-XRD, X'pert Philips, Netherlands). It is confirmed that bioactive ions play an essential role in the normal bone growth and metabolism of the human skeletal tissues.

• The Journal of Advanced Prosthodontics
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• 제8권4호
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• pp.275-284
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• 2016

PURPOSE. The aim of this study was to evaluate the influence of different surface treatment methods on the microtensile bond strength of resin cement to resin nanoceramic (RNC). MATERIALS AND METHODS. RNC onlays (Lava Ultimate) (n=30) were treated using air abrasion with and without a universal adhesive, or HF etching followed by a universal adhesive with and without a silane coupling agent, or tribological silica coating with and without a universal adhesive, and divided into 6 groups. Onlays were luted with resin cement to dentin surfaces. A microtensile bond strength test was performed and evaluated by one-way ANOVA and Tukey HSD test (${\alpha}$=.05). A nanoscratch test, field emission scanning electron microscopy, and energy dispersive X-ray spectroscopy were used for micromorphologic analysis (${\alpha}$=.05). The roughness and elemental proportion were evaluated by Kruskal-Wallis test and Mann-Whitney U test. RESULTS. Tribological silica coating showed the highest roughness, followed by air abrasion and HF etching. After HF etching, the RNC surface presented a decrease in oxygen, silicon, and zirconium ratio with increasing carbon ratio. Air abrasion with universal adhesive showed the highest bond strength followed by tribological silica coating with universal adhesive. HF etching with universal adhesive showed the lowest bond strength. CONCLUSION. An improved understanding of the effect of surface treatment of RNC could enhance the durability of resin bonding when used for indirect restorations. When using RNC for restoration, effective and systemic surface roughening methods and an appropriate adhesive are required.

• 한국세라믹학회지
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• 제39권7호
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• pp.628-634
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• 2002

수열합성법에 의한 정방정 BaTiO$_3$ 분말의 생성속도 및 유전특성에 대해서 연구하였다. 초미립 BaTiO$_3$분말의 합성을 위한 출발물질로는 Ba(OH)$_2$. 8$H_2O$, TiO$_2$(anatase)가 사용되었으며, 광화제로써 KOH가 사용되었다. 수열합성은 20$0^{\circ}C$의 온도에서 1~168시간동안 이루어 졌으며, 정방정상으로의 상전이를 관찰하기 위하여 1100~130$0^{\circ}C$의 온도로 하소처리 하였다. 최적의 조건(20$0^{\circ}C$에서 168시간동안 수열합성 된 분말을 120$0^{\circ}C$에서 3시간 하소한 분말)에서 얻어진 분말은 0.5~0.7$mu extrm{m}$ 정도의 분말이었으며, 유전특성 평가결과 고유전율 재료로써 적합함을 알 수 있었다.

• 한국재료학회지
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• 제23권11호
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• pp.638-642
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• 2013

Chalcopyrite $CuInSe_2$(CIS) is considered to be an effective light-absorbing material for thin film photovoltaic solar cells. CIS thin films have been electrodeposited onto Mo coated and ITO glass substrates in potentiostatic mode at room temperature. The deposition mechanism of CIS thin films has been studied using the cyclic voltammetry (CV) technique. A cyclic voltammetric study was performed in unitary Cu, In, and Se systems, binary Cu-Se and In-Se systems, and a ternary Cu-In-Se system. The reduction peaks of the ITO substrate were examined in separate $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ solutions. Electrodeposition experiments were conducted with varying deposition potentials and electrolyte bath conditions. The morphological and compositional properties of the CIS thin films were examined by field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The surface morphology of as-deposited CIS films exhibits spherical and large-sized clusters. The deposition potential has a significant effect on the film morphology and/or grain size, such that the structure tended to grow according to the increase of the deposition potential. A CIS layer deposited at -0.6 V nearly approached the stoichiometric ratio of $CuIn_{0.8}Se_{1.8}$. The growth potential plays an important role in controlling the stoichiometry of CIS films.

• 한국재료학회지
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• 제23권11호
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• pp.661-665
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• 2013

We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.