• 제목/요약/키워드: field resistance

검색결과 2,422건 처리시간 0.031초

외부 교류지장에 대한 Bi-2223테이프의 통전손실 특성 (Transport Loss Characteristics of a Bi-2223 Tape in External AC Magnetic Fields)

  • 류경우;김창완;차귀수
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제50권6호
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    • pp.290-295
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    • 2001
  • The transport loss of a Bi-2223 tape exposed to external magnetic fields was investigated. The results show that the transport loss is independent on voltage lead arrangements in case the magnetization loss is compensated. A serous increase of the transport loss due to external AC magnetic field is observed. The loss is described well by dynamic resistance loss in relatively high fields, but another mechanism than the dynamic resistance must be responsible for the increase of the loss in low fields. The transport loss is also dependent strongly on the orientation of the external fields.

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Ge25Se75-based ReRAM 소자의 전계에 의한 저항 변화에 대한 연구 (Field-induced Resistive Switching in Ge25Se75-based ReRAM Device)

  • 김장한;남기현;정홍배
    • 한국전기전자재료학회논문지
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    • 제25권3호
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    • pp.182-186
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    • 2012
  • Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

직류전동기의 새로운 파라미터 추정기법에 관한 연구 (A Study on the New Parameter Estimation Technique of Direct Current Motor)

  • 김종수;김성환
    • Journal of Advanced Marine Engineering and Technology
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    • 제31권4호
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    • pp.441-447
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    • 2007
  • The speed and torque control performance of the DC motor used in the industrial field is affected by the change of parameters. In particular the change of armature resistance can be greatly originated from various load conditions. Accordingly a large number of studies to estimate those problems in the servo motor control field have already been under way. In this paper, the armature resistance on the DC motor under several load and speed conditions is estimated by the Artificial Neural Network(ANN), and the validity is proven by the speed estimation of sensorless speed control system.

전도성 고분자를 이용한 전자파 차폐효과 (The Electromagnetic Shielding Effectiveness Using Conducting Polymers)

  • 하남규;김종은;서광석
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.306-309
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    • 2000
  • The conductive polymers, polyaniline (PANI) emeraldine base and 3, 4-polyethylene dioxythiophene (PEDOT) were synthesized and coated on the PET film primer-dealt with acryl type to find out the electromagnetic shielding effectiveness. When conductive polymer such as PANI and PEDOT is used, if the thickness of coating increases then the electromagnetic shielding effectiveness increases, too, but the visible light transmittance decreases. For PANI, when its conductivity increased, its electromagnetic shielding effectiveness increased, too. For PANI, if the surface resistance is about 140 $\Omega$/$\square$, the shielding effectiveness is about 11 dB in the far field, and about 13 dB in the near field at 1 GHz. For PEDOT, when the surface resistance is about 200 $\Omega$/$\square$, the shielding effectiveness is about 3 dB.

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열산화법에 의한 phosphorus 에미터 pile-up (Pile-up of phosphorus emitters using thermal oxidation)

  • 부현필;강민구;이경동;이종한;탁성주;김영도;박성은;김동환
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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    • pp.122.1-122.1
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    • 2011
  • Phosphorus is known to pile-up at the silicon surface when it is thermally oxidized. A thin layer, about 40nm thick from the silicon surface, is created containing more phosphorus than the bulk of the emitter. This layer has a gaussian profile with the peak at the surface of the silicon. In this study the pile-up effect was studied if this layer can act as a front surface field for solar cells. The effect was also tested if its high dose of phosphorus at the silicon surface can lower the contact resistance with the front metal contact. P-type wafers were first doped with phosphorus to create an n-type emitter. The doping was done using either a furnace or ion implantation. The wafers were then oxidized using dry thermal oxidation. The effect of the pile-up as a front surface field was checked by measuring the minority carrier lifetime using a QSSPC. The contact resistance of the wafers were also measured to see if the pile-up effect can lower the series resistance.

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Transient loss analysis of non-insulation high temperature superconducting coil using the field-based data profiling method

  • Hoon Jung;Yoon Seok Chae;June Hee Han;Ji Hyung Kim;Seung Hoon Lee;Ho Chan Kim;Young Soo Yoon;Ho Min Kim
    • 한국초전도ㆍ저온공학회논문지
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    • 제25권3호
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    • pp.38-42
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    • 2023
  • The evaluation of no-insulation (NI) high-temperature superconducting (HTS) typically uses the lumped equivalent circuit (LEC) model. Constant parameters in the NI HTS LEC model accurately predict voltage and central magnetic field at currents below the critical current. However, it is difficult to find constant circuit parameters that simultaneously satisfy the measured voltage and magnetic field under overcurrent conditions. Recent research highlights changes in contact resistance during transient conditions, which may impact power loss estimation in NI HTS coils. Therefore, we confirm the influence of contact resistance changes on loss calculation in the transient state for NI HTS coil. To achieve this, we introduce a measurement data analysis method based on the LEC model and compare it with the LEC model using constant circuit parameters.

SABiT 공법적용 인쇄회로기판의 은 페이스트 범프 크기 및 제작 조건에 따른 전기 저항 특성 (Characterization of Electrical Resistance for SABiT Technology-Applied PCB : Dependence of Bump Size and Fabrication Condition)

  • 송철호;김영훈;이상민;목지수;양용석
    • 한국전기전자재료학회논문지
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    • 제23권4호
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    • pp.298-302
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    • 2010
  • We investigated the resistance change behavior of SABiT (Samsung Advanced Bump interconnection Technology) technology-applied PCB (Printed Circuit Board) with the various bump sizes and fabrication conditions. Many testing samples with different bump size, prepreg thickness, number of print on the formation of Ag paste bump, were made. The resistance of Ag paste bump itself was calculated from the Ag paste resistivity and bump size, measured by using 4-point probe method and FE-SEM (Field Emission Scanning Electron Microscope), respectively. The contact resistance between Ag paste bump and conducting Cu line were obtained by subtracting the Cu line and bump resistances from the measured total resistance. It was found that the contact resistance drastically changed with the variation of Ag paste bump size and the contact resistance had the largest influence on total resistance. We found that the bump size and contact resistance obeyed the power law relationship. The resistance of a circuit in PCB can be estimated from this kind of relationship as the bump size and fabrication technique vary.

RELATIONSHIP BETWEEN STATIC AND DYNAMIC MAGNETORESISTANCE BEHAVIOR OF METALLIC ARTIFICIAL SUPERLATTICES

  • Song, Yong-Jin;Joo, Seung-Ki
    • 한국자기학회지
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    • 제5권5호
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    • pp.567-569
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    • 1995
  • By using the ac field source which can change the applied field magnitude, frequency and dc offset field, the dynamic magnetoresistance characteristics of permalloy based multilayers which have different R-H(resistance-magnetic field) curves were monitored and compared with static magnetoresistance curves that were measured with electromagnet of VSM. Output of each sample according to the external field strength was identified and optimum bias position could be obtained.

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지반위에 놓인 콘크리트 슬래브의 수직하중에 대한 슬래브 하부의 수평 저항의 영향 분석 (Effect of Horizontal Resistance at Slab Bottom on Behavior of Concrete Slabs-on-Grade under Vertical Loads)

  • 심재수;김성민
    • 한국도로학회논문집
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    • 제7권4호
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    • pp.141-150
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    • 2005
  • 지반위에 놓인 콘크리트 슬래브가 수직 하중을 받을 때 지반의 전단저항과 슬래브 하부와 지반과의 마찰 등에 의해 생기는 슬래브 하부의 수평저항을 고려하여 지반위에 놓인 콘크리트 슬래브의 거동을 분석하였다. 슬래브 하부의 수평 저항을 고려하기 위한 해석 공식을 유도하였고 퓨리에변환을 이용한 변환영역에서 이러한 공식의 해를 구하였다. 또한 판요소와 쉘요소를 이용한 유한요소법에 의한 모델을 개발하여 수치 해석 결과도 도출하였다. 이러한 해석 공식과 수치해석 모델을 이용한 해석 결과를 비교 분석하였고 매우 비슷한 결과가 도출되는 것을 알 수 있었다. 콘크리트 슬래브의 응력 분포에 슬래브 하부의 수평저항이 미치는 민감성을 여러 가지의 다른 슬래브의 두께, 탄성계수, 그리고 지반의 수직탄성계수 등을 고려하여 분석하였다. 해석 결과에서 슬래브 하부의 수평 저항은 슬래브의 응력에 매우 큰 영향을 미칠 수 있다는 것을 발견하였다.

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