• 제목/요약/키워드: field emission emitter

검색결과 184건 처리시간 0.023초

Active-Matrix Cathodes though Integration of Amorphous Silicon Thin-Film Transistor with triode -and Diode-Type field Emitters

  • Song, Yoon-Ho;Cho, Young-Rae;Hwang, Chi-Sun;Kim, Bong-Chul;Ahn, Seong-Deok;Chung, Choong-Heui;Kim, Do-Hyung;Uhm, Hyun-Seok;Lee, Jin-Ho;Cho, Kyoung-Ik
    • Journal of Information Display
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    • 제2권3호
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    • pp.72-77
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    • 2001
  • Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

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Carbon nanotubes for Field Emission Displays.

  • Milne, W.I.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.919-922
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    • 2004
  • The Field Emission Display is potentially an excellent display with high brightness and low power consumption with wide viewing angle but more work is still needed in order to identify the ideal electron emitter for such displays. This paper will review the work that we have carried out in Cambridge aver the past couple of years on optimisation of Carbon nanotubes for use as the cold cathode emitters that are possible candidates as the electron sources in second generation FEDs.

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A flat thin display with RF electron generation

  • Dijk, R. Van;Vissenberg, M.C.J.M.;Zwart, S.T. De
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.927-930
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    • 2004
  • We report on a new type of a flat and thin display with a secondary emission electron source. In this display device electrons are multiplied between two secondary emission plates under a high frequency electric field. This principle has a few important advantages over a field emission display: the emission comes from flat plates, which reduces the life-time problems of ion bombardment of field emitter tips. Furthermore, the electron emission is space charge limited which gives a uniform electron distribution. The electrons are extracted from the source and accelerated to a phosphor screen to generate light. Gray levels are made by pulse width modulation.

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탄소나노튜브의 분산이 탄소나노튜브 캐소드의 전계방출 특성에 미치는 영향 (Effect of CNT Particle Dispersion in CNT Paste on Field Emission Characteristics in Carbon Nanotube Cathode)

  • 안병건;성명석;신허영;김동희;김태식;조영래
    • 한국재료학회지
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    • 제14권11호
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    • pp.807-812
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    • 2004
  • The uniformity of emission mage and field emission properties of carbon nanotube(CNT) cathodes dependence on CNT particle dispersion were investigated for field emission displays. We used multi-walled carbon nanotubes (MWNTs) synthesized by CVD method as the field emitter materials. CNT dispersion in CNT ink was carried out by ultrasonication and shaking methods. According to CNT dispersion conditions, the uniformity of emission image and field emission properties of CNT cathodes were greatly affected. The smaller particles of filler materials and CNT powders provide the better properties of the CNT cathodes.

Field emitter array의 3차원 시뮬레이션 (3-dimensional simulation of field emitter array)

  • 정재훈;김영훈;이병호;이종덕
    • 전자공학회논문지D
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    • 제34D권4호
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    • pp.100-105
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    • 1997
  • 3-dimensional finite element mehtod (FEM) elecrical field analysis was performed to obtain electric fields on a field emission display (FED) tip in an array form. Because, unlike a single tip structure, there is no azimuthal symmetry for a tip aary, 3D analysis is necessary. To reduce memory requriement the simulatio was performed by applying the neumann boundary condition to the intermediate plane between tips to take the effect of the array on the electric field into account and corresponding current was calculated. To verify our algorithm, comparison between simulation resutls and experimental data from another paper was made and the difference was discussed.

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The Effects of Dielectric Coatings on Electron Emission from Tungsten

  • Al-Qudah, Ala'a M.;Alnawasreh, Shady S.;Madanat, Mazen A.;Trzaska, Oliwia;Matykiewicz, Danuta;Alrawshdeh, Saad S.;Hagmann, Mark J.;Mousa, Marwan S.
    • Applied Microscopy
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    • 제47권1호
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    • pp.36-42
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    • 2017
  • Field electron emission measurements were performed on dielectric-coated tungsten emitters, with apex radii in the nanometer and micrometer range, which were prepared by electrochemical etching in NaOH solution. Measurements were performed in a field electron microscopy (FEM) with a base pressure <$10^{-6}$ Pascal ($10^{-8}$ mbar). Four different types of dielectric were used, namely: (1) Clark Electromedical Instruments epoxylite resin, (2) Epidian 6 produced by Ciech Sarzyna S. A., (3) a Radionox solution of colloidal graphite; and (4) Molyslip 2001 E compound ($MoS_2$ and MoS). Current-voltage measurements and FEM images were used to investigate the characteristics of these composite emitters, and to assess how the different types of dielectric coating affect the suitability of the composite emitter as a potential electron source.

Transparent carbon nanotube field emission devices for field emission display and lamp

  • Cho, You-Suk;Lee, Se-Min;Park, Hee-Yong;Lee, Sun-Hee;An, Myung-Chan;Jeong, Se-Young;Kim, Do-Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1233-1234
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    • 2006
  • A simple new method to fabricate transparent carbon nanotube field emission devices was developed. The highly graphitized single wall carbon nanotubes were attached on Sn/ITO glass by arc discharge method. Post heat treatments below the deformation temperature of soda-lime glass guaranteed a good mechanical adhesion and electrical contact of the nanotubes. The Sn layer was oxidized below $400^{\circ}C$ and became transparent. As increasing the oxidation temperatures, the emission properties became stable and life time of emitter has been increased.

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Emission Behavior of Screen Printed CNT Field Emitters for Advanced Lamp Application

  • Leer, Myoung-Bok;Kim, Dae-Jun;Song, Yoon-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.691-692
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    • 2009
  • Screen printable CNT pastes were formulated including conductive nano particles (CNPs) and their properties were investigated with an expectation of stable cold cathodes for advanced lamp application. CNT cathodes showed a turn-on field of 1~1.5V/um, a life time of ~100 hours at an emission current density of 10uA/$cm^2$ for DC-bias. Detailed analysis of measured I-V was carried out by applying Fowler-Nordheim model to trace down the origin of emission property degradation.

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HIP에 의해 합성된 CN nanostructures의 구조 및 전계방출 특성 (Structure and Electron Emission Properties of CN Nanostructures Obtained by HIP Apparatus)

  • 오정근;이양두;문승일;양석현;이윤희;김남수;주병권
    • 한국전기전자재료학회논문지
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    • 제16권8호
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    • pp.723-730
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    • 2003
  • The CN(carbon nitrogen) nanofibers were formed by HIP(high isostatic pressure) process. From the field emission measurement, CN nanofibers shows an excellent characteristics of emitter, better than CNTs and carbon nanofibers. The structures obtained can be divided into three groups : bamboo-like fibers, corrugated structures and bead necklace-like fib res. Emission properties of CN nanofibers were investigated for spacing, between anode and cathode, variation. Turn-on fields was 1.4 v/$\mu\textrm{m}$. The time reliability and light emission test were carried out for about 100 hours. We suggest that CN nanofibers can be possibly applied to the high brightness flat lamp because of low turn-on field and time reliability