• International Journal of Automotive Technology
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• 제4권2호
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• pp.65-75
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• 2003

A HEV evaluation program, funded by ADEME, was carried out by a group of Laboratories of different specialties in order to evaluate and compare consumption, emission and component technologies of the three first HEVs put on the market (Toyota Prius, Nissan Tino and Honda Insight). This paper presents the results obtained until now. These results show good consumption and emission performance of the tested vehicles compared to conventional ones. The energy management seems to be globally the same for the three vehicles excepting for cold stans where the Insight allows a very earlier stop of the engine compared to the Tino and especially to the Prius. A mapping of the engine consumption of the Prius and the Insight was performed in order to furnish data for the simulation models. The Permanent Magnet motors of the Prius and Tino have different number of pair poles and then different emf at a given speed. The low emf values of the Prius allow operation at high speed with less field weakening control than for the Tino. The inverters of the Prius and the Tino, controlled by a PWM at respectively 5 kHz and 7 kHz switching frequency, are made of IGBTs with high commutation performances.

• 천문학회보
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• 제36권1호
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• pp.47.2-47.2
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• 2011

Gravitational waves from the pulsar glitch can be detected by next generation gravitational wave observatories. We investigate characteristics of the modes that can emit the gravitational waves excited by three different types of perturbations satisfying conservation of total rest mass and angular momentum. These perturbations mimic the pulsar glitch theories i.e., change of moment of inertia due to the star quakes or angular momentum transfer by vortex unpinning at crust-core interface. We carry out numerical hydrodynamic simulations using the pseudo-Newtonian method which makes weak field approximation for the dynamics, but taking all forms of energies into account to compute the Newtonian potential. Unlike other works, we found that the first and second strongest modes that give gravitational waves are $^2p_1$ and $H_1$ rather than$^2f$. We also found that vortex unpinning model excites the inertial mode in quadrupole moment quite effectively. The inertial mode may evolve into the non-axisymmetric r-mode.

• 한국결정학회지
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• 제11권4호
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.630-630
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• 2013

Recently, atomically smooth hexagonal boron nitride(h-BN) known as a white graphene has drawn great attention since the discovery of graphene. h-BN is a III-V compound and has a honeycomb structure very similar to graphene with smaller lattice mismatch. Because of strong covalent sp2bonds like graphene, h-BN provides a high thermal conductivity and mechanical strength as well as chemical stability of h-BN superior to graphene. While graphene has a high electrical conductivity, h-BN has a highly dielectric property as an insulator with optical band gap up to 6eV. Similar to the graphene, h-BN can be applied to a variety of field, such as gate dielectric layers/substrate, ultraviolet emitter, transparent membrane, and protective coatings. However, up until recently, obtaining and controlling good quality monolayer h-BN layers have been too difficult and challenging. In this work, we investigate the controlled synthesis of h-BN layers according to the growth condition, time, temperature, and gas partial pressure. h-BN is obtained by using chemical vapor deposition on Cu foil with ammonia borane (BH3NH3) as a source for h-BN. Scanning Transmission Electron Microscopy (STEM, JEOL-JEM-ARM200F) is used for imaging and structural analysis of h-BN layer. Sample's surface morphology is characterized by Field emission scanning electron microscopy (SEM, JEOL JSM-7100F). h-BN is analyzed by Raman spectroscopy (HORIBA, ARAMIS) and its topographic variations by Atomic force microscopy (AFM, Park Systems XE-100).

• Membrane and Water Treatment
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• 제2권1호
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• pp.25-37
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• 2011

PES UF membranes containing silver were prepared to impart antibacterial properties for waste water treatment. Asymmetric membranes for antibacterial application were prepared from polyethersulfone (PES) and silver nitrate ($AgNO_3$) (PES/$AgNO_3$=15/2 by weight) solution in N-Methyl-2-pyrrolidone (NMP) via simple wet phase inversion technique. These membranes were characterized by polyvinylpyrrolidone (PVP) and polyethylene glycol (PEG) of different molecular weights (1000 ppm in water) at room temperature and on operating pressure of 5 bars. It was observed that the water flux of PES-$AgNO_3$ membrane is slightly lower than virgin PES but still increased linearly with the increment of pressure applied. The morphology of the resulting membranes was examined using Field-Emission Scanning Electron Microscope (FESEM) coupled with Energy Dispersive Spectroscopy (EDS). Elemental analysis using EDS proved that silver is successfully loaded on the membrane surfaces. Due to the success of loading silver on membrane surfaces, antibacterial activities were evaluated via agar diffusion method against Escherichia coli (E.coli) and Staphylococcus aureus (S.aureus) culture. By incorporating 2 wt% of silver nitrate, PES-$AgNO_3$ showed significant inhibition ring on both E.coli and S.aureus. Filtration of E.coli solution (OD 0.31) showed satisfactory rejection data with ~100% inhibition growth after 24 hours incubation at $37^{\circ}C$. Resultant membranes also exhibit better tensile strength (compared to virgin PES) up to 71% may be due to the suggested interactions. The residual silver during fabrication was measured using ICP-MS and result showed that the residual silver content of PES-$AgNO_3$ membrane was only ~1% of the original silver added in the polymer solution. These studies have shown that PES-$AgNO_3$ UF membranes are potential in improving the filtration in water treatment.

• 한국표면공학회지
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• 제42권1호
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• pp.41-46
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• 2009

The fit between dental implant fixture and zirconia abutment is affected by many variables during the fabrication process by CAD/CAM program and milling working. The purpose of this study was to evaluate the surface compatibility and electrochemical behaviors of zirconia abutment for prosthodontics. Zirconia abutments were prepared and fabricated using zirconia block and milling machine. For stabilization of zirconia abutments, sintering was carried out at $1500^{\circ}F$ for 7 hrs. The specimens were cut and polished for gap observation. The gap between dental implant fixture and zirconia abutment was observed using field-emission scanning electron microscopy (FE-SEM). The hardness and corrosion resistance of zirconia abutments were observed with vickers hardness tester and potentiostat. The gap between dental implant fixture and zirconia abutment was $5{\sim}12{\mu}m$ for small gap, and $40{\sim}60{\mu}m$ for large gap. The hardness of zirconia surface was 1275.5 Hv and showed micro-machined scratch on the surface. The corrosion potentials of zirconia abutment/fixture was .290 mV and metal abutment/fixture was .280 mV, whereas $|E_{pit}-E_{corr}|$ of zirconia abutment/fixture (172 mV) was higher than that of metal abutment/fixture (150 mV). The corrosion morphology of metal abutment/fixture showed the many pit on the surface in compared with zirconia abutment/fixture.

• 대한치과보철학회지
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• 제45권5호
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• pp.675-686
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• 2007

Statement of problem: Titanium nitride(TiN) coatings are the most general and popular coating method and used to improve the properties of metallic surface for industrial purposes. When TiN coating applied to the abutment screw, frictional resistance would be reduced, as a results, the greater preload and prevention of the screw loosening could be expected. Purpose: The purpose of this study was to investigate mechanical properties of TiN coated film of various coating thickness on the titanium alloy surface and to evaluate proper coating thickness. Material and method: 95 Titanium alloy (Ti-6Al-4V) discs of 15 mm in diameter and 3 mm in thickness were prepared for TiN coating and divided into 7 groups in this study. Acceding to coating deposition time (CDT) with TiN by using Arc ion plating, were divided into 7 groups : Group A (CDT 30min), Group B (CDT 60min), Group C (CDT 90min), Group D (CDT 120min), Group E (CDT 150min), Group F(CDT 180min) and Group G (no CDT) as a control group. TiN coating surface was observed with Atomic Force Microscope(AFM), field emission scanning electron microscopy(FE-SEM) and examined with scratch tester, wear tester. Result: 1. Coating thickness fir each coated group was increased in proportion to coating deposition time. 2. Surface of all coated groups except Group A was homogeneous and smooth. However, surface of none coated Group G had scratch. 3. Adhesion strength for each coated group was increased in proportion to coating deposition time. 4. Wear resistance for each coated group was increased in proportion to coating deposition time. 5. Surface roughness in Group A, B, C was increased in proportion to coating deposition time. But, surface roughness in Group D, E, F was showed decreased tendency in proportion to coating deposition time. Conclusion: According to coating deposition time, mechanical properties of TiN coated film were changed. It was considered that 120 minutes coating deposition time ($1.32{\mu}m$ in coating thickness) is necessary.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.5-6
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• 2002

The new spectrometer for X-ray Induced Electron Emission Spectroscopy (XIEES) .has been recently developed in KRISS in collaboration with PTI (Russia). The spectrometer allows to perform research using the XAFS, SXAFS, XANES techniques (D.C.Koningsberger and R.Prins, 1988) as well as the number of techniques from XIEES field(L.A.Bakaleinikov et all, 1992). The experiments may be carried out with registration of transmitted through the sample x-rays (to investigate bulk samples) or/and total electron yield (TEY) from the sample surface that gives the high (down to several atomic mono-layers in soft x-ray region) near surface sensitivity. The combination of these methods together give the possibility to obtain a quantitative information on elemental composition, chemical state, atomic structure for powder samples and solids, including non-crystalline materials (the long range order is not required). The optical design of spectrometer is made according to Johannesson true focusing schematics and presented on the Fig.1. Five stepping motors are used to maintain the focusing condition during the photon energy scan (crystal angle, crystal position along rail, sample goniometer rail angle, sample goniometer position along rail and sample goniometer angle relatively of rail). All movements can be done independently and simultaneously that speeds up the setting of photon energy and allows the using of crystals with different Rowland radil. At present six curved crystals with different d-values and one flat synthetic multilayer are installed on revolver-type monochromator. This arrangement allows the wide range of x-rays from 100 eV up to 25 keV to be obtained. Another 4 stepping motors set exit slit width, sample angle, channeltron position and x-ray detector position. The differential pumping allows to unite vacuum chambers of spectrometer and x-ray generator avoiding the absorption of soft x-rays on Be foil of a window and in atmosphere. Another feature of vacuum system is separation of walls of vacuum chamber (which are deformed by the atmospheric pressure) from optical elements of spectrometer. This warrantees that the optical elements are precisely positioned. The detecting system of the spectrometer consists of two proportional counters, one scintillating detector and one channeltron detector. First proportional counter can be used as I/sub 0/-detector in transmission mode or by measuring the fluorescence from exit slit edge. The last installation can be used to measure the reference data (that is necessary in XANES measurements), in this case the reference sample is installed on slit knife edge. The second proportional counter measures the intensity of x-rays transmitted through the sample. The scintillating detector is used in the same way but on the air for the hard x-rays and for alignment purposes. Total electron yield from the sample is measured by channeltron. The spectrometer is fully controlled by special software that gives the high flexibility and reliability in carrying out of the experiments. Fig.2 and fig.3 present the typical XAFS spectra measured with spectrometer.