• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.162-162
• /
• 2013

Magnetic properties of 3d transition metals were determined by exchange interaction between magnetic ions that was characterized by the exchange integral. Bulk Mn material is one of transition metals that have been well known as an anti-ferromagnetic material due to an anti-parallel spin with negative exchange integral. Here we report on the MBE growth of Mn on $BaTiO_3$ (001) substrate and induced ferromagnetism. The bcc ${\alpha}$-Mn single crystal film has been grown on $BaTiO_3$ (100) substrate. The XRD and Raman results indicated that the structural phase transitions of $BaTiO_3$ substrate induced a lattice distortion at the interface. Consequently, the grown Mn film exhibits ferromagnetism with strong saturation magnetization of 495 emu/$cm^3$ at 320 K. The electrical resistivity of the Mn film strongly depended on the crystal structure of $BaTiO_3$ substrate.

• Journal of Magnetics
• /
• v.10 no.4
• /
• pp.163-170
• /
• 2005

The RF integrated noise filters are fabricated by photolithography. The stack for the electromagnetic noise filters consists of the nano-granular ($Co_{41}Fe_{38}AI_{13}O_8$) soft magnetic film / $SiO_2$ / Cu transmission line / seed layer (Cu/Ti) / $SiO_2$-substrate. A good signal-attenuation feature along with a low signal-reflection feature is observed in the present filters. Especially in the noise filter incorporated with a $Co_{41}Fe_{38}AI_{13}O_8$ magnetic film with lateral dimensions of $2000{\mu}m$ wide, 15 mm long and $1{\mu}m$ thick, the maximum magnitude of signal attenuation reaches -55 dB, and the magnitude of signal reflection is below -10 dB in the overall frequency range. And this level of signal attenuation is much larger than that of a noise filter incorporated with a Fe magnetic film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.77-80
• /
• 2001

Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

• Journal of the Korean Magnetics Society
• /
• v.7 no.3
• /
• pp.129-133
• /
• 1997

To investigate the influence of the Hf concentration and the annealing effect in $Co_{1-x}Hf_x$(X=0.16, 0.24 at.%) systems, ferromagnetic resonance experiments have been carried out. Spin wave resonance spectra for all samples consist of several volume modes and one (or two) surface mode. It is suggested that both surfaces of the film have a perpendicular hard axis to the film plane (negative surface anisotropy). The surface anisotropy $K_{s2}$ at substrate-film interface is varied slowly from -0.07 to -0.32 erg/$\textrm{cm}^2$ and the surface anisotropy $K_{s1}$ at film-air interface is varied from 0.18 to -0.47 erg/ $\textrm{cm}^2$ with increasing annealing temperature in the amorphous $Co_{84}Hf_{16}$ thin films. Also, the surface anisotropy $K_{s2}$ is varied slowly from -0.31 to -0.41 erg/$\textrm{cm}^2$ and the surface anisotropy $K_{s1}$is varied from -0.19 to -0.60 erg/$\textrm{cm}^2$ with increasing annealing temperature in the amporphous $Co_{84}Hf_{16}$ thin films. We conjecture that the variation of surface anisotropy $K_{s1}$ is due to the increase of Co concentration resulted from Hf oxidation for low temperature annealing(150~175 $^{\circ}C$) and the diffusion of Co atoms near the film surfaces for high temperature annealing (200~225 $^{\circ}C$).

• Journal of the Korean Magnetics Society
• /
• v.16 no.3
• /
• pp.186-191
• /
• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Journal of the Korean Magnetics Society
• /
• v.7 no.1
• /
• pp.31-37
• /
• 1997

The magnetoresistance and the saturation field behavior of the Co-Ag nano granular films as a function of the composition and the ferromagnetic underlayer and overlayermaterials were investigated. The maximum magnetoresistance of 23% and the saturation field of 2.3 kOe at room temperature were obtained in the as-deposited 3000$\AA$ $Co_{30}Ag_{70}$ single alloy films. The magnetoresistance and the saturation field of 100$\AA$ $Co_{30}Ag-{70}$ alloy film were 3.65 % and 3.0 kOe respectively. Those of the sandwiched films with 200$\AA$ Fe were 3.3 % and 1.23 kOe respectively. The saturation field of the sandwiched alloy films could be reduced by the exchange coupling between the ferromagnetic layers and the alloy layer. The effective depth of the exchange coupling was approximately 150$\AA$ in each Fe layer. Among the Fe, Co, and FeNi, the most effective materials to reduce the saturation field of the sandwiched alloy films was Fe.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.12 no.1
• /
• pp.36-41
• /
• 2002

Abstract The stoichiometric and double-ordered perovskite $Sr_2FeMoO_6$ (SFMO) polycrystalline ceramics were fabricated by sintering at above $900^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SMO polycrystals showed good ferromagnetic properties andmagnetrotesistqnce ratios of about 15 % at 8K and 3 % at room temperature. Amorphous SFMO thin films were deposited on $LaA1O_3$ and $SrTiO_3$ single crystal substrates using rf sputtering method with the SFMO polycrystalline ceramic target. Double-ordered perovskite polycrystalline SFMO thin films were fabricated by solid state crystallization by annealing the deposited amorphous films at above $680^{\circ}C$ in $H_2$(5%)/Ar reductive ambient. SFMO thin films exhibited ferromagnetic behavior. Their magnetroresistance ratios, however, were only 0.3~0.5% at 8K and disappeared with increasing the measuring temperature. This was attributed to the absence of magnetic spin tunneling between grains due to the porous structure and non-stoichiometric composition of the deposited films.

• Journal of the Korean Magnetics Society
• /
• v.23 no.5
• /
• pp.154-158
• /
• 2013

We have analyzed the magnetization curves measures by using VSM and MOKE in synthetic antiferromagnetic coupled CoB/Ru/CoB thin film. The measured results were compared with calculated ones by Stoner-Wohlfarth model based on the magnetization behavior of two ferromagnetic layers ($M_1$, $M_2$). The calculated total magnetization ($M_{tot}=M_1+M_2$) and single layer magnetization($M_1$) behaviors were compared with measured results by using VSM and MOKE, respectively. The total magnetization curve ($M_{tot}=M_1+M_2$) showed reversible magnetization behavior with flopping field of about 50 Oe. While single layer magnetization ($M_1$) behaviors showed irreversible magnetization behavior in the field range of $H_F$ < H < $H_F$. These magnetization behaviors were explained by the angle difference between magnetization directions of two ferromagnetic layers in SAF sample.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2003.06a
• /
• pp.266-267
• /
• 2003

The most distinguishing character of diluted magnetic semiconductors (DMSs) is a strong interaction between sp-carriers and localized d-spins (sp-d exchange interaction). Recently many "room-temperature (RT) ferromagnetic DMS" have been reported. However, it should be noted that their sp-d exchange interactions have not been confirmed yet. The lack of a clear evidence of the sp-d exchange interaction causes the controversy on the origin of the observed ferromagnetism. For the detection of the sp-d exchange interaction, magneto-optical spectroscopy such as a magnetic circular dichroism (MCD) measurement is the most powerful tool. By using the MCD spectroscopy, we have shown the sp-d exchange interactions in Zn$_{l-x}$Cr$_{x}$Te. Recently, we have obtained the RT ferromagnetism in a Zn$_{l-x}$Cr$_{x}$Te (x = 0.20) film.0) film.

• Journal of the Korean Vacuum Society
• /
• v.12 no.S1
• /
• pp.100-103
• /
• 2003

The magnetoresistance (MR) of $La_{1-\chi}S_{\chi}CoO_{3-\delta}$ films prepared by pulsed-laser deposition were investigated in order to clarify the magnetotransport properties around the metal-insulator transition. For the films in the metallic state ($\chi$ > 0.25), the MR(T) manifests a small peak at the Curie temperature due to the spin-disorder scattering. The transition of the film into the insulating state ($\chi\;\leq$ 0.25) is accompanied by an essential growth of the MR and results in a significant increase in the MR(T) with decreasing temperature, due to a phase separation into the ferromagnetic-metal clusters and the insulating matrix.