• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.207.1-207.1
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• 2008

• Progress in Superconductivity
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• 제2권1호
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• pp.43-46
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• 2000

We report on the tunneling spectroscopy of tunnel junctions using d-wave superconductor in relation to Andreev reflection. The zero bias conductance peak (ZBCP) which has maximum on [110] direction of ab-plane is observed on metal $Au/YBa_2Cu_3O_y$ tunnel junctions while it is suppressed on the ferromagnetic $Co/Au/YBa_2Cu_3O_y$ tunnel junctions. The effects of Andreev reflection on the differential conductance of each junction are dependent on the tunnel direction. For the $Co/Au/YBa_2Cu_3O_y$ junction, the suppression of Andreev reflection takes place by spin-polarized quasiparticles tunneling from a ferromagnetic material to a d-wave superconductor. By comparing these experimental results with recent theoretical works on Andreev reflection, the existence of Andreev bound state due to the d-wave symmetry of the pair potential is verified in high-$T_c$ superconductor.

• 한국초전도ㆍ저온공학회논문지
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• 제18권2호
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• pp.5-7
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• 2016

We present an experimental investigation of the superconducting transition temperatures, $T_c$, of superconductor/ferromagnet bilayers with varying the thickness of ferromagnetic layer. FeN was used for the ferromagnetic (F) layer, and NbN and Nb were used for the superconducting (S) layer. The results were obtained using three different-thickness series of the S layer of the S/F bilayers: NbN/FeN with NbN thickness, $d_{NbN}{\approx}9.3nm$ and $d_{NbN}{\approx}10nm$, and Nb/FeN with Nb thickness $d_{Nb}{\approx}15nm$. $T_c$ drops sharply with increasing thickness of the ferromagnetic layer, $d_{FeN}$, before maximal suppression of superconductivity at $d_{FeN}{\approx}6.3nm$ for $d_{NbN}{\approx}10nm$ and at $d_{FeN}{\approx}2.5nm$ for $d_{Nb}{\approx}15nm$, respectively. After shallow minimum of $T_c$, a weak $T_c$ oscillation was observed in NbN/FeN bilayers, but it was hardly observable in Nb/FeN bilayers.

• Journal of Magnetics
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• 제10권2호
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• pp.66-70
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• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.321.2-321.2
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• 2007

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.235.1-235.1
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• 2007

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.205.2-205.2
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• 2007

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2011년도 임시총회 및 하계학술연구발표회
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• pp.41-41
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• 2011

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2013년도 자성 및 자성재료 국제학술대회
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• pp.122-122
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• 2013

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.170-171
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• 2002

최근에 스핀트로닉스 주요 관심 소자의 하나인 자성체와 반도체 하이브리드형 쇼트키 장벽 다이오드 (Schottky Barrier Diode; SBD) 소자는 금속과 반도체간의 장벽전압에 의해 다수 전자가 이동하는 현상을 이용한 것으로서 과거에 신호 검파용으로 사용하던 금속 접촉 다이오드와 유사한 구조와 원리를 가진다. 내부 저항이 작고 동작속도가 빨라서 PC의 전원 장치와 같이 고속, 고효율을 요구하는 환경에 많이 사용된다. 쇼트키 장벽 소신호 다이오드와 쇼트키 장벽 정류기의 구분은 불분명하며 보통 0.5 A를 기준으로 구분한다. (중략)