• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.215-218
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• 2002

In this paper, we propose a microstrip line tunable phase shifter. If we vary the applied bias voltage, the relative dielectric constant of ferroelectrics also changes and we designed tunable phase shifter using Au/BSTO/MgO/Au structure. We also used a coupling structure to increase the amount of phase shift at certain frequency in a limited size and we could reduce the loss by reducing the line width.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.227-229
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• 2002

In this paper, we report on a microstrip line voltage controlled tunable bandpass filter. We used the characteristic the relative dielectric constant of thin film ferroelectrics depends on the applied dr voltage. we designed using Au/BSTO/MgO/Au structure. We cascaded many resonators for large furling range sustaining 1 GHz renter frequency, narrow band, low IL ($\leq$4 dB). We could design the BPF of which center frequency is 16 GHz, 1.9 GHz tuning range, the narrow bandwidth within 800 MHz, low insertion loss less than 3 dB by adjusting the gap of 3 cascaded resonators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.109-112
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• 1999

The PZT(10/90)/(90/17) heterolayered thin films were fabricated by the spin-coaling on the Pt/Ti/SiO$_2$/Si substrate using the PZT(10/90) and PZT(70/10) metal alkoxide solutions. The effect of heterolayered thin films on the ferroelectrics and electrical properties have been investigated. The lower PZT layers provided the nucleation site for the formation of a perovskite phase of the upper PZT films. Dielectric constant increased with increasing the number of coatings, and it was about 569.9 at PZT-6 heterolayered films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.184-188
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• 2014

The electro-optic properties in Langmuir Blodgett films of poly (vinylidene fluoride trifluoroethylene) are investigated in the crossover region between two and three dimensions. The absence of finite size effect is observed in the films thinner than 20 nm, which confirms that these films are two dimensional ferroelectrics. The copolymer LB film of P(VDF-TrFE) exhibits the largest electro-optic response(26 pm/V) at 10 layer thickness. The cross-over behavior of electro-optic effect around the 10 layer thickness was discussed with the formation of nanomesa after thermal annealing.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.370-379
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• 2000

Simple ways to build up mixed-metal molecules which can act as potential single-source precursors to multimetallic oxides are reviewed. Emphasis is given to Lewis acid-base reactions between metal alkoxides M(OR)/sub n/, and between metal alkoxides and more accessible oxide precursors, carboxylates M(O₂CR)/sub n/ and β-diketonates M(β-dik)/sub n/. Characterization of the precursors is achieved in the solid state (single crystal X-ray diffraction, FT-IR) and by multinuclear NMR in solution. The reactions proceed toward the formation of aggregates in which the different metals display their usual coordinations numbers, often six for transition metals, as shown. Strategies for fixing the stoichiometry between the metals are developed. The reactivity of the MM species (dissociation, effects of chemical modifiers, of other metallic species, hydrolytic or non-hydrolytic condensation, etc.) will be indicated. Transformations into oxides are illustrated on precursors for titanates or niobates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.611-615
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• 2003

Eu-doped lead zirconate titanate(Pb$\sub$1.1/(Zr$\sub$0.6/Ti$\sub$0.4/)O$_3$; PZT) thin films on the Pt/Ti/SiO$_2$/Si substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Eu content. Eu-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Eu content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Eu content. The 0.5 mol% of Eu-doped PZT thin film showed improved fatigue characteristic comparing to the undoped PZT thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.57-60
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• 2003

This paper describes the modeling and simulation results for film bulk acoustic resonators(FBAR). We present the frequency tuning mechanisms, analytical solutions of the wave equation and the influence of the thickness of the electrodes. The impedance for PZT based FBAR is derived utilizing proper boundary conditions and their material parameters. Ferroelectrics-based RF filter composed of FBARs are designed.

• Journal of the Korean Magnetic Resonance Society
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• v.21 no.2
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• pp.63-66
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• 2017

The $^{14}N$ NMR spectra for $(NH_4)_2SO_4$ crystals were obtained near the phase transition temperature $T_C=223K$, and were found to precisely reflect the symmetry change in the crystal at this first-order phase transition. Changes in the resonance frequencies near $T_C$ were attributed to the structural phase transition. In the ferroelectric and paraelectric phases, two inequivalent NH4 groups were distinguished in the $^{14}N$ NMR spectra. The two types, $NH_4$(1) and $NH_4$(2), have slightly different local environments. Consequently, we conclude that the phase transition is caused by the change in the environment of the $^{14}N$ nuclei in the $NH_4$ groups, rather than by the $SO_4$ groups.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.42-45
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• 2002

Properties of lead zirconate titanate ferroelectric thin films prepared by rapid thermal annealing/direct insertion thermal annealing were investigated. The remnant polarization (Pr), saturation polarization (Ps), and coercive force (Ec) of typical samples annealed by rapid thermal annealing (RTA) are about 13.7 $\mu$ C/cm$^2$, 27.1 $\mu$C/cm$^2$, and 55.6 kV/cm, respectively. The dielectric constant of the sample is about 786, the dielectric loss tangent is about 2.4% at 1 kHz. Furthermore, ferroelectric, conduction, and piezoelectric properties of the thin films annealed by RTA process and the direct insertion thermal annealing (DITA) process were compared. The influence of temperature in the dry process on the above properties was also investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.362-363
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• 2006

In this study, the filter was designed for tuning center frequency and fabricated using ($Sr,Ba)TiO_3$ ferroelectrics and $YBa_2CuO_7$ high temperature superconductor thin film. The best result in figure of merit was 35 when the $Ba_{0.5}Sr_{0.5}TiO_3$ thin film deposition temperature was $600^{\circ}C$, the post anneal condition was $600^{\circ}C$, 10min in 1atm, $O_2$. When using $20{\mu}m$ IDC pattern gap. The higher tunability was obtained than using $30{\mu}m$ pattern gap.