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김용태;윤기현;김태희;박경봉;곽상희
- Journal of the Korean Ceramic Society
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- v.37 no.1
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- pp.6-11
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- 2000
Electron emission from the Pb(ZrxTi1-x)O3 ferroelectrics by pulsed electric field has been investigated as a function of Zr/Ti ratios such as 35/65, 50/50 and 65/35 below 250kV/cm. Electrons were emitted regardless of the applied field polarity to the rear electrode. When the negative field was applied to the rear electrode, the electron emission charge was more stable. It was proved that the electrons were emitted at the edge of the upper electrode. The emission charge increased in order of 65/35>50/50>35/65. The electron emission characteristics were dependent on the ferroelectric properties such as polarization and coercive field. The emission charge and emission threshold field were affected by the polarization change and the coercive field, respectively. This result explains that the electron emission is a field emission with polarization induced surface potential by a modified Fowler-Nordheim plot of emission charge.
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Bark, Chung Wung
- Prospectives of Industrial Chemistry
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- v.24 no.1
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- pp.3-13
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- 2021
강유전체는 특유의 높은 유전상수와 자발분극으로 인해 반도체 소자 및 센서 등에서 널리 활용되어 왔다. 강유전체의 특성을 활용하여 광전소자에서 형성된 전하를 원하는 방향으로 쉽게 이동시킬 수 있는 특성을 가지고 있어 광전소재와 결합 시 특성 향상이 가능한 것으로 알려져 있다. 그러나 강유전체와 기존 태양전지와의 융합 연구들은 기초적인 단계의 연구가 산발적으로 진행되고 있으나, 아직 실용화 단계에는 이르지 못하고 있다. 본 서지에서는 최근에 활발히 연구되기 시작한 강유전 기반 광소자와 그 관련 연구를 소개하고자 한다. 특히 강유전체 자체를 활용한 태양전지와 유기태양전지, 실리콘 태양전지, 페로브스카이트 태양전지 등 최근 가장 활발히 연구되고 있는 태양전지 소재와 강유전체를 결합한 새로운 태양전지의 연구동향을 다룰 고자 한다. 이와 같은 자발분극에 의한 캐리어 이동의 변화는 에너지 소자 전반에 기여할 수 있을 것이다.

허창우
- Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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- 2003.05a
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- pp.501-504
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- 2003
In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.
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Park, Jae-Hwan
- Journal of the Korean Ceramic Society
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- v.38 no.10
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- pp.953-957
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- 2001
To study various relaxation phenomena of $Pb(Mg_{1/3}Nb_{2/3})O_3$ relaxor ferroelectrics, weak electric-field properties as well as strong electric-field properties were investigated in the frequency range from 1 Hz to 100 kHz. The temperature dependence of the dielectric properties were measured under the low electric-field of 1 V/mm in the phase transition temperature range from $-40^{\circ}C$ to $90^{\circ}C$. The dielectric properties obtained from the slope of the dielectric hysteresis loop and the temperature dependence of the pyroelectric properties were also investigated. When fitting all the experimental data with the Vogel-Fulcher relation, experimental data were agreed with the equation closely. Thus, dielectric relaxations could be modeled by the Vogel-Fulcher relation not only for the low electric-field but also for the high electric-field.
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