• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.87-90
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• 2002

In recent year, BLT($Bi_{3.25}La_{0.75}Ti_{3}O_{12}$) has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $Bi_{3.25}La_{0.75}Ti_3O_{12}$ Target with a ceramic process. The BLT target was sintered at ${1100^{\circ}C}$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric properly as a functions of post annealing temperatures. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample of ${700^{\circ}C}$. This sample exhibited the (117) preferred crystal orientation, current density of $3{\times}10^{-8}A/cm^2$, a remanent polarization of $8{\mu}C/cm^2$ and a coercive field of 42.1 KV/cm respectively.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.72-83
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• 1993

Abstract A new and versatile method for the preparation of biphenyl thioester series was studied in ferroelectric liquid crystal. Many of the resulting liquid crystal showed a ferroelectric chiral smectic C phase in addition to the chiral nematic and smectic A phase. We obtained a large spontaneous polarization exceeding $10^{-8}$C/c$m^2$ in new biphenyl thioester series. It was found that the size and polarity of the substituent in chiral carbon influenced the magnitude of spontaneous polarization. The series allow us to determine the influence of substituent size in the chiral carbon the existence and the stability of the Sc* phase.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.287-288
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• 2004

We report on the development of ferronematic liquid crystals, new materials that consist of a dilute suspension of ferroelectric particles in a nematic liquid crystal host. The particles share their ferroelectric properties with the nematic liquid crystal and impose a spontaneous dielectric polarization of about 10 nC/$cm^2$ to the entire medium, typical for many ferroelectric liquid crystals. As expected, these new materials have enhanced dielectric anisotropy and are sensitive to the sign of an applied electric field. The potential of their use in a number of devices are discussed.

• Journal of Information Display
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• v.12 no.3
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• pp.129-134
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• 2011

The universal current reversal method is used for the simultaneous measurement of response time (${\tau}$), azimuthal angle (${\varphi}_o$), spontaneous polarization ($P_S$), and rotational viscosity (${\gamma}_{\varphi}$) of two ferroelectric liquid crystals (FLCs). The application of AC field in FLCs results in reorientational current, which is further analyzed to obtain various parameters. The variation in the parameters with temperature follows the typical trend predicted by the theory. The theoretical curve fits well into the experimental data. Its comparison with traditional current reversal method is confirmed to address certain limitations of that method.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.237-237
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• 2006

P(VDF/TrFE(72/28) ultrathin films were used in the fabrication of Metal-Ferroelectric polymer-Metal (MFM) single bit device with special emphasis on uniform film surface, faster dipole switching time under applied external field and longer memory retention time. AFM and FTIR-GIRAS were complementary in analyzing surface crystalline morphology and the resultant change in chain orientation with varying thermal history. DC-EFM technique was used to 'write-read-erase' the data on the memory bit in a much faster time than P-E studies. The results obtained from this study will enable us to have a good understanding of the ferroelectric and piezoelectric behavior of P(VDF/TrFE)(72/28) thin films suitable for high density data storage applications.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.2
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• pp.18-22
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Sio$_2$/Si substrate at 4,000 [rpm] for 10 seconds. The structural characteristics of the surface were analyzed by fractal dimension. The thickness of BST ceramics thin films was about 260∼280 [nm]. The property of the leakage current was stable with 10-9∼10-11[A] when the applied voltage was 0∼3[V]. BST thin films ha low leakage current properties when fractal dimension was low and a coating area was high.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.673-679
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• 2006

The discovery of ferroelectric barium titanate (BaTiO$_3$) in 1942 began the present era of dielectrics-based electronic ceramics. Ferroelectric barium titanate has a high dielectric constant and after the recognition of BaTiO$_3$ as a new ferroelectric compound, various attractive electrical properties have been extensively studied and reported. Since then, pioneering work on valence-compensated semiconduction led to the discovery of the positive temperature coefficient (PTC) of the resistance effect found in doped BaTiO$_3$. Significant progress has since followed with respect to understanding the PTC phenomena, advancing materials capabilities, and developing devices for sensor and switching applications. In this paper, the theoretical aspects of the various PTC models are discussed and the future trends of practical applications for PTC devices are briefly mentioned.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.2-211.2
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• 2014

Epitaxial complex oxide thin film heterostructures have attracted a great attention for their multifunctional properties, such as ferroelectricity, and ferromagnetism. Two dimensional electron gas (2DEG) confined at the interface between two insulating perovskite oxides such as LaAlO3/SrTiO3 interface, provides opportunities to expand various electronic and memory devices in nano-scale. Recently, it was reported that the conductivity of 2DEG could be controlled by external electric field. However, the switched conductivity of 2DEG was not stable with time, resulting in relaxation due to the reaction between charged surface on LaAlO3 layer and atmospheric conditions. In this report, we demonstrated a way to control the conductivity of 2DEG in non-volatile way integrating ferroelectric materials into LAO/STO heterostructure. We fabricated epitaxial Pb(Zr0.2Ti0.8)O3 films on LAO/STO heterostructure by pulsed laser deposition. The conductivity of 2DEG was reproducibly controlled with 3-order magnitude by switching the spontaneous polarization of PZT layer. The controlled conductivity was stable with time without relaxation over 60 hours. This is also consistent with robust polarization state of PZT layer confirmed by piezoresponse force microscopy. This work demonstrates a model system to combine ferroelectric material and 2DEG, which guides a way to realize novel multifunctional electronic devices.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.190-193
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• 2006

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_{3}O_{12}$, thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si(100) substrates by a MOCVD process. Fabricated BGT thin films were found to be random oriental ions, which were confirmed by X-ray diffraction and scanning electron microscope analysis. The remanent polarization value ($2P_r$) of the BGT thin film annealed at $720^{\circ}C$ was $45.13{\mu}C/cm^2$, at an applied voltage of 5 V. The BGT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied voltage of 5 V. These results indicate that the randomly oriented BGT thin film is a promising candidate among ferroelectric materials useful in lead-free nonvolatile ferroelectric random access memory applications.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.835-839
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• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.