• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.313-320
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• 1995

We investigated the preferred orientation, electrical and magnetic properties of the Mn-Zn ferrite thin films deposited on SiO2/Si(100) by ion beam sputtering. The Cu-added Mn-Zn ferrite thin films had a preferred orientation of (111) with a weak orientation, (311). While the Zn-added one had a strong (111) preferred orientation. The saturation magnetization of the Cu- or Zn-doped Mn-Zn ferrite films increased with increasing substrate temperature (Ts) due to the increase of grain size and the enhancement of crystallinity. For the same reason the coercivity of Cu- or Zn-doped Mn-Zn ferrite films deposited at low Ts increased with increasing Ts, but those of the films deposited at high Ts slightly decreased not only because the defect density of the films decreases but because more grains have multi-domains with increasing Ts. The resistivity of Cu- or Zn-added Mn-Zn ferrite thin fims measured by complex impedance method decreased with increasing Ts due to the ehhancement of crystallinity as well as due to the increase of grain size.

• Journal of Magnetics
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• v.7 no.2
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• pp.51-54
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• 2002

The crystallization of amorphous Ba-ferrite/sapphire(001) thin films was studied in real-time synchrotron x-ray scattering experiments. In the sputter-grown amorphous films, we found the existence of epitaxial $Fe_3O_4$ interfacial crystallites (50-${\AA}$-thick), well aligned $[0.03^circ$full-width at half-maximum (FWHM)] to the sapphire [001] direction. The amorphous precursor was crystallized to epitaxial Ba-ferrite and \alpha-Fe_2O_3$grains in two steps; i) the nucleation of crystalline \alpha-Fe_2O_3$ phase started at $300^circ{C}$ together with the transformation of the $Fe_3O_4$ crystallites to the \alpha-Fe_2O_3$ crystallites, ii) the nucleation of Ba-ferrite phase occurred at temperature above $600^circ{C}$. In the crystallized films irrespective of the film thickness, the crystal domain size of the \alpha-Fe_2O_3$grains was about 250 ${\AA}$ in the film plane, similar to that of the Ba-ferrite grains.

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.168-172
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• 2001

Co-Zn ferrite thin films grown on thermally oxidized silicon wafers were fabricated by a sol-gel method. Magnetic and structural properties of Co-Zn thin films were investigated by using x-ray diffractometer (XRD), atomic force microscopy (AFM), auger electron spectroscopy (AES) and a vibrating sample magnetometer (VSM). Co-Zn ferrite thin films annealed at 400 $^{\circ}C$ presented have only a single phase spinel structure without any preferred crystallite orientation. Their surface roughness of Co-Zn ferrite thin films was shown as less than 3 nm and the grain size was about 40 nm for annealing temperatures over 600 $^{\circ}C$. A moderate saturation magnetization of Co-Zn ferrite thin films for recording media was obtained in this study and there is no significant difference of their magnetic property with those external fields of parallel and perpendicular to planes of the films. The maximum value of the coercivity was obtained as 1,900 Oe for Co-Zn ferrite thin film annealed at 600 $^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.658-663
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• 1998

Ferrite plating enables were grown by ferrite by plating method in solution at low temperature(<10$0^{\circ}C$). This faciltates the fabrication of new ferrite thin film devices using non- heat-resistant materials(plastic, GaAs ect) as substrates. Combining the ferrite plating with sonochemistry, application of power ultrasonic waves to stimulate chemical reactions, the crystallinity and qualities of films were improved. Modifying the reactions cell and plating conditions further improved the film quality.

• Journal of the Korean Ceramic Society
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• v.37 no.5
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• pp.425-431
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• 2000

Cobalt ferrite thin films on Corming glass substrate were fabricated by a sol-gel method. Cobalt ferrite thin films with the grain size of 20-35 nm and thickness of 50nm were obtained. Rapid thermal annealing (RTA) and Annealing processes were adopted for comparison of characteristics of the films. Coercivity values were changed with thermal condition and magnetization values were increased as a function of soaking time. With prolonged soaking time, however, it was decreased because of the diffusion of cations from the glass substrate. The RTA process in preparation of cobalt ferrite thin film was the effective way to prevent and to form a single spinel phase in reduced soaking time. The film heated at 600$^{\circ}C$ for 30 minutes by RTA had coercivity of 2,600 Oe, saturation magnetization 460 emu/㎤, and Mr$.$$\delta$ of 1.43 memu/$\textrm{cm}^2$.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.405-407
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• 2000

Polycrystalline films of Ni- and Co-ferrites films are prepared from aqueous solution at $90^{\circ}C$ by ferrite plating, which are subjected to Fe$^57$ conversion electron Mossbauer spectroscopy in backscatter mode. The average angle of Fe spins relative to the film plane is evaluated as 18 degree and 82 degree for the Ni- and Co-ferrite films, respectively, indicating a prominent magnetic anisotropy parallel and perpendicular to the film plane. It was also verified by the magnetization measurements.

• Journal of the Korean Ceramic Society
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• v.29 no.5
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• pp.383-390
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• 1992

We investigated the effect of substrate on the properties of the Ni-Zn-Cu ferrite thin films deposited on SiO2 (1000∼3000${\AA}$) / Si (100) substrate at various conditions by rf magnetron sputtering. A disktype Ni-Zn-Cu ferrite sintered by conventional ceramic process and argon gas were used as a target and a sputtering gas, repectively. The compositions of the thin films measured by EPMA were similar to target composition (Fe: 65.8 at%, Ni: 12.7 at%, Cu: 6.7 at%, Zn: 14.8 at%) irrespective of substrate temperature. Amorphous thin films were deposited when substrate was not intentionally heated, but the films came to crystallize with increasing substrate temperature, and crystalline thin films were deposited at substrate temperature above 200$^{\circ}C$. Below 250$^{\circ}C$ saturation magnetization (Ms), remanence (Mr) and coercivity (Hc) of the ferrite thin film increased with the substrate temperature due to the increase of grain size and the improvement of crystallinity. And above 250$^{\circ}C$, Ms, Mr increased slightly, but Hc of the amorphous thin films increased due to crystallization, whereas that of the crystalline thin films decreased because of grain growth and stress release.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.703-709
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• 2006

We report on the synthesis of highly uniform, single phase zinc and cobalt thin films prepared by the Liquid Phase Deposition (LPD) method. X-Ray diffraction, TGA and EDX measurements support the assumption that the as deposited films are constituted by a mixture of crystallized FeOOH and amorphous M(OH)$_2$ (M=Co, Zn) which is converted upon heat treatment in air at 600?C into the corresponding zinc ferrites. The films with adjustable chemical compositions are identified with a crystal structure as spinel-type and present a spherical or rod-like microstructure, depending on the both the nature and concentration of the divalent transition metal ions. Zinc ferrite thin films present a superparamagnetic behavior above blocking temperatures which decrease with increasing the Zn content and are ferromagnetic at 5 K with coercivities ranging between 797.8 and 948.5 Oe, whereas the cobalt ferrite films are ferromagnetic at room temperature with magnetic characteristics strongly dependent on the chemical composition.

• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.145-150
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• 1996

The magnetic thin films can be prepared without vacuum process and under the low temperature ( < $100^{\circ}C$) by ferrite plating. We have performed ferrite plating of $Fe_{3-x}Mn_{x}O_4(x=0.0~0.023)$ films on glass plate at $80^{\circ}C$. We got the film $9000\AA$ in thickness, having a mirror-like luster. The composition parameter, x, in the $Fe_{3-x}Mn_{x}O_4$ films is much smaller then the corresponding on, x', in the reaction solution(x/x'=O.04). The saturation magnetization($M_{s}$) of $Fe_{3}O_{4}$ ferrite film as measured by a VSM was $M_{s}$=480 emu/cc which agrees with $Fe_{3}O_{4}$ bulk samples.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.185-190
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• 1995

Tribological behavior of the diamond-like carbon (DLC) films sliding on floppy disk has been investigated. Hydrogenated DLC films have been prepared by plasma enhanced chemical vapor deposition (PECVD) using methane and hydrogen mixture in different volume ratios on ferrite substrates. DLC films show lower friction coefficients (0.2~0.4) than those of the uncoated ferrite(0.4~0.5). DLC films containing more hydrogen exhibit higher wear resistance. To investigate the roughness effect on wear, the substrates were polished with SiC papers prior to deposition. Too fine or too rough DLC surfaces result in poor wear resistance. Wear resistance of annealed DLC films at higher temperature slightly increases with respect to as-deposited film.