• Laser Solutions
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• v.14 no.4
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• pp.21-27
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• 2011

In this work, we have studied on time-resolved transient reflective image of single crystalline Si surface after single-shot fs-laser irradiation with varying the laser fluence under two different laser spot sizes. The temporal profiles of transient reflectivity changes as well as its maximum values at the early delay time were found to be strongly dependent on both the laser beam spot size and laser fluence. We have interpreted the dependence of transient reflectivity changes on the laser spot size in terms of a relaxation of the generated free carriers to the bulk silicon, which should be interacted with the plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.317-318
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• 2013

Terahertz (THz) wave는 광학 영역과 방송파 영역 사이에 광대역 주파수 스펙트럼을 차지하고 있다. X선과는 달리 비이온화 광원으로 직진성, 투과성, 낮은 에너지 (meV)를 가지고 있어 비파괴적이고 무해한 장점을 지니고 있다. 본 연구에서는 In0.53Ga0.47As:Be/In0.52Al0.48As의 multi quantum well (MQW)을 Semi-insulting InP:Fe substrate 위에 active layer의 두께와 적층을 변화주어서 성장하였고Au (200 nm)/Ti (30 nm)의 금속전극으로 공정을 하였다. Ti:Sapphire femtosecond pulse laser를 조사하여 THz time-domain spectrometer 시스템을 이용하여 광전도검출법으로 THz 검출 특성을 연구하였다. THz 검출은 짧은 전하수명과 높은 저항을 요구한다. LTInGaAs의 경우 AsGa antisite로 인하여 짧은 전하수명을 얻게 되면 n-type의 높은 전하밀도를 가지게 되어서 저항이 낮아지게 된다. 높은 저항을 만들기 위하여 Be doping을 이용하여 과잉의 전자들을 보상하고 InAlAs layer를 삽입시켜 보다 높은 저항을 얻었다. LT-InGaAs:Be는 LT-GaAs보다 1/70 정도의 amplitude를 보이는데 LT-InGaAs/InAlAs MQW의 경우 LT-GaAs 대비 약 3/4 정도의 큰 amplitude를 얻었다. 또 active layer의 두께가 얇고 적층이 많을수록 신호가 커지는 것을 알 수 있었다. 이는 상대적으로 band gap이 큰 InAlAs층이 더 높은 저항을 만든 것으로 사료된다.

• Korean Journal of Optics and Photonics
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• v.18 no.5
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• pp.345-350
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• 2007

The characteristics of the supercontinuum generated in photonic crystal fibers were investigated by using the generalized nonlinear $Schr\"{o}dinger$ equation and the split-step Fourier method. Based on the simulated results, we generated the supercontinuum spectrum with the flatness of ${\pm}4dB$ in the wavelength range of 650 to 900 nm by employing a 200-fs pulse of Ti:sapphire laser and a commercial photonic crystal fiber.

• Journal of the Korean Magnetics Society
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• v.25 no.2
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• pp.39-42
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• 2015

After preparing carbon-doped FePt films by dc magnetron sputtering, we observed ultrafast demagnetization and its recovery by means of a time-resolved magneto-optical Kerr effect technique. We confirm that the degree of $L1_0$ ordering is decreased and coercivity is changed, as the carbon concentration increases. All samples are demagnetized within ~5 ps after the femtosecond laser pulse heated the sample. Interestingly, ultrafast relaxation time, which indicates fast magnetization recovery, increases as the carbon concentration increases due to the low spin-orbit coupling of carbon.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.29-36
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• 2007

The main objectives of this study are to investigate the micro-scale energy transfer mechanism for silicon wafer and to find an efficient way for fabrication of silicon wafer through-hole by using the femtosecond pulse laser ablation. In addition, the electron-phonon interactions during laser irradiation are discussed and the carrier number density and temperatures are estimated. In particular, the present study observes the shapes of silicon wafer through-hole with $100\;{\mu}m$ diameter and it also measures the heat-affected area and the ablation depths fur different laser fluences by using the optic microscope and the three-dimensional profile measurement technique. First, from numerical investigation, it is found that the nonequilibrium state exists between electrons and phonons during laser irradiation. From experimental results, it should be noted that the heat-affected area increases with laser fluence, and the optimal conditions for through-hole formation with minimum heat affected zone are finally obtained.

• Korean Journal of Optics and Photonics
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• v.19 no.5
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• pp.370-375
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• 2008

High-speed high-resolution terahertz time-domain spectroscopy (THz-TDS) is demonstrated using the asynchronous-opticalsampling (AOS) method. A time-domain signal with a 10-ns time window is rapidly acquired by using two femtosecond lasers with slightly different repetition frequencies to generate and detect a terahertz pulse wave, without a mechanical delay stage. The spectrum obtained by the fast Fourier transformation (FFT) of the time-domain waveform has a frequency resolution of 100 MHz. The time resolution of our spectrometer is measured using the cross-correlation method to be 278 fs. A transmission spectrum of water vapor is measured and the absorption lines are analyzed in the frequency range from 0.1 to 1.2 THz.

• Korean Journal of Optics and Photonics
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• v.11 no.5
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• pp.360-364
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• 2000

We demonstrate self-starting passIve mode locking of a Cr:LiSAF laser, using a SCIDlconduclor Saturable Absorber Mirror (SESAM), Two high-power red semiconductor lasers (Coherent S-67-500C-100-H) of wavelength 667 nm and maximum power of 500 mW were used as pump lasers, The cavity has 10 cm radius-ai-curvature folding minors, two SF 10 prisms, a 99% reflectivity output coupler and a SESAM at dIe focus of a 10 cm radIus-at-curvature mirror. We used the laser crystal in BrewsterBrewster shape with 1 5% $Cr^{+3}$ ion concentration and the length of 6 mm, An X-shaped resonator was used to compensate the astigmatism induced by tile crystal. The structure of the SESAM cOllSists of 30 pmr of $AlAs/Al_{0.15}Ga_{0.85}As$ layer, wi1l1 a 10 nm GaAs quantum well situated in the topmost layer Output spectra were centeled at 833 nm, with 4 nm spectral bandwidth and pulse width was measured to be 220 fs, Output power of 3 mW is obtained at a pump power of 800 mW. 00 mW.