• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.6-11
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• 2016

For high volume manufacturing using extreme ultraviolet (EUV) lithography, mask protection from contamination during lithography process must be solved, and EUV pellicle is the strongest solution. Based on the technical requirements of EUV pellicle, EUV pellicle should have large membrane area ($110{\times}140mm^2$) with film transmittance over 90% and mechanical stability. Even though pellicle that satisfies size standard with high transmittance has been reported, its mechanical stability has not been confirmed, nor is there a standard to evaluate the mechanical stability. In this study, we suggest a rather simple method evaluating mechanical stability of pellicle membrane using spin-coater which can emulate the linear accelerated motion. The test conditions were designed by simulating the acceleration distribution inside pellicle membrane through correlating the linear acceleration and centripetal acceleration, which occurs during linear movement and rotation movement, respectively. By these simulation results, we confirmed the possibility of using spin-coater to evaluate the mechanical stability of EUV pellicle.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.17-21
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• 2016

EUV (Extreme Ultraviolet) pellicle which protects a mask from contamination became a critical issue for the application of EUV lithography to high-volume manufacturing. However, researches of EUV pellicle are still delayed due to no typical manufacturing methods for large-scale EUV pellicle. In this study, EUV pellicle membrane manufacturing method using not only KOH (potassium hydroxide) wet etching process but also a water bath was suggested for uniform etchant temperature distribution. KOH wet etching rates according to KOH solution concentration and solution temperature were confirmed and proper etch condition was selected. After KOH wet etching condition was set, $5cm{\times}5cm$ SiNx (silicon nitride) pellicle membrane with 80% EUV transmittance was successfully manufactured. Transmittance results showed the feasibility of wet etching method with water bath as a large-scale EUV pellicle manufacturing method.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.65-65
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• 2010

Extreme ultraviolet lithography (EUVL) is expected to be applied for making patterns below 32 nm in device industry. An ultrathin EUV photoresist (PR) of a few nm in thickness is required to reduce minimum feature size further. Here, we show that pentacene molecular layers can be employed as a new EUV resist for the first time. Dots and lines in nm scale are successfully realized using the new molecular resist. We clearly provide the mechanism for forming the nanopatterns with scanning photoemission microscope (SPEM), EUV interference lithography (EUV-IL), atomic force microscope (AFM), photoemission spectroscopy (PES), etc. The molecular PR has several advantages over traditional polymer EUV PRs; for example, high thermal/chemical stability, negligible outgassing, ability to control the height and width on the nanometer scale, leaving fewer residuals, no need for a chemical development process and thus reduction of chemical waste to make the nanopatterns. Besides, it could be applied to any substrate to which pentacene bonds chemically, such as $SiO_2$, SiN, and SiON, which is of importance in the device industry.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.42.2-43
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• 2021

We address a question of what are three main channels that can best translate other channels in ultraviolet (UV) and extreme UV (EUV) observations. For this, we compare the image translations among the nine channels of the Atmospheric Imaging Assembly on the Solar Dynamics Observatory using a deep learning model based on conditional generative adversarial networks. In this study, we develop 170 deep learning models: 72 models for single-channel input, 56 models for double-channel input, and 42 models for triple-channel input. All models have a single-channel output. Then we evaluate the model results by pixel-to-pixel correlation coefficients (CCs) within the solar disk. Major results from this study are as follows. First, the model with 131 Å shows the best performance (average CC = 0.84) among single-channel models. Second, the model with 131 and 1600 Å shows the best translation (average CC = 0.95) among double-channel models. Third, among the triple-channel models with the highest average CC (0.97), the model with 131, 1600, and 304 Å is suggested in that the minimum CC (0.96) is the highest. Interestingly they are representative coronal, photospheric, and chromospheric lines, respectively. Our results may be used as a secondary perspective in addition to primary scientific purposes in selecting a few channels of an UV/EUV imaging instrument for future solar satellite missions.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.3
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• pp.18-23
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• 2024

Nanoimprint lithography (NIL) is widely used to form structures ranging from micro to nanoscale due to its advantage of generating high-resolution patterns at a low process cost. However, most NIL processes require the use of imprint resists and external elements such as ultraviolet light or heat, necessitating additional post-processes like etching or metal deposition to pattern the target material. Furthermore, patterning on flexible and/or non-planar films presents significant challenges. This study introduces an extreme pressure imprint lithography (EPIL) process that can form micro-/nano-scale patterns on the surface of a flexible rubber magnet composite (RMC) film at room temperature without an etching process. The EPIL technique can form ultrafine structures over large areas through the plastic deformation of various materials, including metals, polymers, and ceramics. In this study, we demonstrate the process and outcomes of creating a variety of periodic structures with diverse pattern sizes and shapes on the surface of a flexible RMC composed of strontium ferrite and chlorinated polyethylene. The EPIL process, which allows for the precise patterning on the surface of RMC materials, is expected to find broad applications in the production of advanced electromagnetic device components that require fine control and changes in magnetic orientation.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.189-189
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• 2015

Plasmonics, sensor, field effect transistors, solar cells 등 다양한 적용분야를 가지는 실리콘 구조체는 제작공정에 의해 전기적 및 광학적 특성이 달라지기 때문에 적합한 나노구조 제작방법이 요구되고 있다. 나노구조체 제작방법으로는 Photo lithography, Extreme ultraviolet lithography (EUV), Nano imprinting lithography (NIL), Block copolymer (BCP) 방식의 방법들이 연구되고 있으며, 특히 BCP는 direct self-assembly 특성을 가지고 있으며 가격적인 면에서도 큰 장점을 가진다. 하지만 BCP를 mask로 사용하여 식각공정을 진행할 경우 BCP가 버티지 못하고 변형되어 mask로서의 역할을 하지 못한다. 이러한 문제를 해결하기 위하여 본 논문에서는 BCP와 질화막을 이용한 double mask 방법을 사용하였다. 기판 위에 BCP를 self-assembly 시키고 mask로 사용하여 hole 부분으로 노출된 기판을 Ion gun을 통해 질화 시킨 후에 BCP를 제거한다. 기판 위에 hole 모양의 질화막 표면은 BCP와 다르게 etching 공정 중 변형되지 않는다. 이러한 질화막 표면을 mask로 사용하여 pillar pattern의 실리콘 나노구조체를 제작하였다. 질화막 mask로 사용되는 template은 PS와 PMMA로 구성된 BCP를 사용하였다. 140kg/mol의 polystyrene과 65kg/mol의 PMMA를 톨루엔으로 용해시키고 실리콘 표면 위에 spin coating으로 도포하였다. Spin coat 후 230도에서 40시간 동안 열처리를 진행하여 40nm의 직경을 가진 PS-b-PMMA self-assembled hole morphology를 형성하였다. 질화막 형성 및 etching을 위한 장비로 low-energy Ion beam system을 사용하였다. Reactive Ion beam은 ICP와 3-grid system으로 구성된 Ion gun으로부터 형성된다. Ion gun에 13.56 MHz의 frequency를 갖는 200W 전력을 인가하였다. Plasma로부터 나오는 Ion은 $2{\Phi}$의 직경의 hole을 가지는 3-grid hole로 추출된다. 10~70 voltage 범위의 전위를 plasma source 바로 아래의 1st gird에 인가하고, 플럭스 조절을 위해 -150V의 전위를 2nd grid에 인가한다. 그리고 3rd grid는 접지를 시켰다. chamber내의 질화 및 식각가스 공급은 2mTorr로 유지시켰다. 그리고 기판의 온도는 냉각칠러를 이용하여 -20도로 냉각을 진행하였다. 이와 같은 공정 결과로 100 nm 이상의 높이를 갖는 40 nm직경의 균일한 Silicon pillar pattern을 형성 할 수 있었다.

• Ocean and Polar Research
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• v.33 no.3
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• pp.303-308
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• 2011

Polar psychrophiles which thrive under extreme conditions such as cold temperature, high salinity, and high dose ultraviolet light, emerge as novel targets for biotechnology. To prevent genetic drift and the possibility of contamination by subculturing, cryopreservation was employed for two psychrophilic microalgae, Porosira sp. (KOPRI AnM0008) and Pyramimonas sp. (KOPRI AnM0046), which have anti-freeze activities. Five cryoprotectants (dimethyl sulphoxide, ethylene glycol, glycerol, methanol and propylene glycol) showed toxicity at 20-30% (v/v). The optimal cryoprotectant concentration and equilibration time were less than 20% and 10 min, respectively. Cryopreservation was carried out in the presence of cryoprotectants either by direct freezing in liquid nitrogen ($LN_2$) or controlled freezing using a controlled rate freezer followed by storage in the $LN_2$ tank. As a result, Pyramimonas sp. (KOPRI AnM0046), a psychrophilic chlorophyta was revived. Cryopreserved Porosira sp. was not revived from either freezing protocols probably due to the silicic cell wall and its relatively large cell size. In the case of Pyramimonas sp. (KOPRI AnM0046), the controlled freezing method showed higher revival yield than the direct freezing method.

• Journal of The Korean Astronomical Society
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• v.29 no.spc1
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• pp.333-335
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• 1996

Here we report the results from spectroscopic observations of soloar active regions in the HeI 10830 ${\AA}$ line at the German Vacuum Tower Telescope(VTT) in Tenerife during the August 199:3 International EFR(Emerging Flux Region) Campaign. Four active regions in various stages of their evolution, i.e., NOAA7558, 7560, 7561, and 7562, were ovserved on 10 August 1993. From the observed HeI 10830 ${\AA}$ spectra in these active regions, spectroscopic quantities such as equivalent width(EW), doppler shift, doppler width, etc., were derived(see Figure l(a)) and the correlation between them were studied(see Figure l(b)). Our main results are as follows: (I)In NOAA7562, which is a young and evolving EFR, the EW is large, while it is small around a simple and roundish spot of NOAA7558. (2)In these active regions, redshift in the 10830 line is dominant when the EW is larger. (3)As the doppler width increases, the line tends to shift redward. (4)When the EW is smaller, it seems to exist another component which have dynamic characteristics different from the redshifting component. In NOAA7560 and NOAA7561, regions which have several small spots, the values of the EW are intermediate. Results (2) and (3) may suggest the possible existence of downflow above active regions, if the HeI 10830 ${\AA}$line is formed in the upper chromopshere, and it is consistent with the earlyer result from the SMM extreme-ultraviolet observation by Klimchuk(1987, Astrophys. J., 323, 368) (to be submitted. to Astronomy and Astrophysics; an extended abstract)

• Journal of the Korean Society of Clothing and Textiles
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• v.40 no.3
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• pp.456-464
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• 2016

A new combat uniform is improved for added combat safety with various functions such as survivability, battle conformity and a camouflage performance system. Camouflage performance is an important factor in terms of combat survivability since it makes identification difficult and provide security. The combat uniform is worn under extreme conditions (exposure to ultraviolet light, sweat and friction) and an excellent color fastness to repeated washing is required. In this study, we investigated the color management, durability and discoloration of new combat uniform fabric with a digital pattern for camouflage performance to provide preliminary color management data. We examined color differences between standard fabric and mass-produced combat uniform fabrics, color differences between each military supply contract firm and color changes in combat uniforms after 60 washing cycles. The slight color differences between standard fabric and mass-produced combat uniform fabrics were tolerable under quality criteria of Republic of Korea Ministry of National Defense. However, the differences between the military supply contract firms were recognizable to the naked eye and increased with repeated washing. Continuous research on color fastness under repeated washing and color management is required to standardize reliability from each military supply contract firm for the daytime performance of a combat uniform's camouflage.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.1
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• pp.28.2-28.2
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• 2010

We have investigated seven Extreme-Ultraviolet (EUV) bright points in the active region (AR 10926) on 2006 December 2 by the EUV imaging spectrometer (EIS) onboard Hinode spacecraft. We determined their Doppler velocities and non-thermal velocities from 15 EUV spectral lines (log T=4.7-7.2) by fitting each line profile to a Gaussian function. We present the Doppler velocity map as a function of temperature which corresponds to a different height. As a result, these active region bright points show two different types of characteristics. Type 1 bright point shows a systematic increase of Doppler velocity from -68 km/s (blue shift) at log T=4.7 to 27 km/s (red shift) at log T=6.7, while type 2 bright points have Doppler velocities in the range of -20 km/s and 20 km/s. Using MDI magnetograms, we found that only type 1 bright point was associated with the canceling magnetic feature at the rate of $2.4{\times}10^{18}$ Mx/hour. When assuming that these bright points are caused by magnetic reconnection and the Doppler shift indicates reconnection out flow, the pattern of the Doppler shift implies that type 1 bright point should be related to low atmosphere magnetic reconnection. We also determined electron densities from line ratio as well as temperatures from emission measure loci using CHIANTI atomic database. The electron densities of all bright points are comparable to typical values of active regions (log Ne=9.9-10.4). For the temperature analysis, the emission loci plots indicate that these bright points should not be isothermal though background is isothermal. The DEM analysis also show that while the background has a single peak distribution (isothermal), the EUV bright points, double peak distributions.