• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.518-518
• /
• 2013

자외선이 생체를 파괴하거나 탄생시킬 수 있는 중요한 요소라는 것은 잘 알려져있다. 이 때문에 생체 시료를 보통 자외선 파장대인 250~350 nm보다 짧은 10 nm 영역에 있는 극자외선에 노출되었을 때 그 상호작용 및 변화를 찾아서 분석하는 것을 목표로 삼는다. 먼저 이에 대한 기초내용으로, 앞으로 활용하게 될 플라즈마 집속장치에서의 전극형태에 따른 EUV 광원의 특성을 알아보는 실험을 진행하였다. 이 실험은 집속 플라즈마 발진장치의 2가지 전극인 마테르 (Mather) 형태의 전극과, 초사이클로이달 핀치(Hypercycloidal pinch) 핀치 형태의 전극에서 발진된 극자외선(Extreme Ultraviolet : EUV) 집속 플라즈마의 전자온도와, 전자밀도, power를 분석하였다. 그리고 EUV 광원 발생장치에 Ar 가스와, Ne-Xe 가스내 환경에서 2 종류의 전극에 의해 만들어진 고밀도 플라즈마로부터 발생된 EUV의 특성을 알아보았다.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.2092-2094
• /
• 2000

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.1
• /
• pp.61-69
• /
• 2014

With the extreme ultraviolet (EUV) lithography, the performance limit of chemically amplified resists has recently been extended to 16- and 11-nm nodes. However, the line edge roughness (LER) and the line width roughness (LWR) are not reduced automatically with this performance extension. In this paper, to investigate the impacts of the EUVL mask and the EUVL exposure process on LER, EUVL is modeled using multilayer-thin-film theory for the mask structure and the Monte Carlo (MC) method for the exposure process. Simulation results demonstrate how LERs of the mask transfer to the resist and the exposure process develops the resist LERs.

• The Bulletin of The Korean Astronomical Society
• /
• v.37 no.2
• /
• pp.131.1-131.1
• /
• 2012

We use three-dimensional magnetohydrodynamic (MHD) simulations of flux emergence from solar subsurface to corona. In our previous work, we reported the relation between magnetic-field configuration and the flux expansion factor. Following these results, we investigate where an upflow is generated in an active region and how its location is related to the flux expansion factor. We also derive physical quantities of a real active region from observation data provided by Nobeyama Radioheliograph (NoRH), X-Ray Telescope (XRT), and Extreme Ultraviolet Imaging Spectrometer (EIS) onboard Hinode. These physical quantities are plasma density, temperature and flow. By comparing the simulation result and observational one, we will discuss the properties of the location producing a solar wind.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2002.05a
• /
• pp.241-246
• /
• 2002

극자외선 노광공정(EUVL: Extreme Ultraviolet Lithography)은 반도체 공정에서 0.1$\mu\textrm{m}$ 이하의 해상도를 실현하기 위해 연구되고 있는 유력한 차세대 노장공정(NGL: Next Generation Lithography)이다. [1] 본 연구에서는 극자외선 노광공정에서 사용되는 반사형 다층박막 미러를 제조하기 위해서 직접 제작한 전산모사 도구를 이용하여 130~135$\AA$의 파장 영역에서 고반사도를 가지는 효율적인 다층박막의 구조인자를 예측하였으며, 그러한 구조인자를 실현하기 위해서 상온(~300K)에서 마그네트론 스퍼터링을 이용하여 다층박막을 증착하였다. 증착조건 중에서, 공정압력에 따른 다층박막 계면 성장의 질적 의존성이 나타났으며, 결과적으로는 낮은 공정압력에서 더좋은 계면특성을 가지는 다층박막이 형성되었다. 다층박막의 구성물질로 Ru, Mo, Si을 사용하였으며, 다층박막의 구조분석은 high/low angle XRD, 단면 TEM images 등을 이용하여 분석되었다.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1459-1460
• /
• 2006

A new gas jet Z-pinch EUV light source having double gas jet electrodes has been developed. It has two nozzles and two diffusers. The EUV beam is collected from the side of pinch plasma, generated in between the inner nozzle and corresponding diffuser. A cylindrical shell of He gas curtain produced by the outer nozzle is specially designed for shielding the debris and suppressing the inner gas expansion. We have succeeded in generating EUV energy of 1.22 mJ/sr/2%BW/pulse at 13.5nm. The estimated dimension of EUV source is to be FWHM diameter of 0.07 mm and length of 0.34 mm, and FW 1/e2 diameter of 0.15 mm and length of 1.2 mm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.40-40
• /
• 2010

Employing synchrotron radiation based photoemission spectroscopy (PES) and scanning tunneling microscopy (STM), our group have investigated Si surfaces, various graphenes and molecular nanolayers. In this talk, I introduce recent results on the surface related systems. All experiments have been performed at the surface science beamlines, 3A2 and 7B1, in Pohang Accelerator Laboratory, where high resolution PES (HRPES) and angle resolved PES (ARPES) are available. Metals or molecules are adsorbed and sometimes extreme ultraviolet is irradiated onto surfaces to give them special functions. I show several examples for surface functionalzation and how to characterize solid surface using the analysis techniques. In particular, lots of ARPES and STM data are provided from graphenes, a strong candidate for replacing Si and conducting oxide currently used in many electronic and optical devices.

• 한국태양에너지학회:학술대회논문집
• /
• 2012.03a
• /
• pp.237-242
• /
• 2012

At present, crystalline solar cells take up a significant percentage of the solar industry. The ways of increasing the efficiency of crystalline solar cell are texturing and AR(Anti-Reflection) coating, and the purpose of these technologies is to increase the amount of available light on the solar cell by reducing the reflectivity. The reflectance of crystalline silicon solar cell combined with such technologies will be able to predict using the proposed simulation in this paper. The simulation algorithm was made using MATLAB, and it is a combination of the theories of reflection in textured wafer and in anti-reflection coated wafer. The simulation results were divided into three wavelength band and were compared with actual reflectance measured by a spectrometer. The wavelength band from 300 to 380 was named ultraviolet region and the wavelength band from 380 to 780 is named visible region. Finally, the wavelength band from 780 to 1200 named infrared region. When compared with measured reflection data, the simulation results had a small error from 0.4 to 0.5[%] in visible region. The error occurred in the rest two regions is larger than visible region. The extreme error occurred the infrared region is due to internal reflection effect, but in the ultraviolet region, the rationale on reduction phenomenon of reflectance occurred in small range did not proved. If these problem will be solve, this simulation will have high reliability more than now and be able to predict the reflectance of solar cells.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.332-332
• /
• 2011

The extreme ultraviolet (EUV) radiation, whose wavelength is from 120 nm down to 10 nm, and the energy from 10 eV up to 124 eV, is widely utilized such as in photoelectron spectroscopy, solar imaging, especially in lithography and soft x-ray microscopy. In this study, we have investigated the plasma diagnostics as well as the debris characteristics between the two types of dense plasma focusing devices with coaxial electrodes of Mather and hypocycloidal pinch (HCP), respectively. The EUV emission intensity, electron temperature and plasma density have been investigated in these cylindrical focused plasma along with the debris characteristics. An input voltage of 5 kV has been applied to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas at pressure ranged from 1 mTorr and 180 mTorr. The inner surface of the cathode was covered by polyacetal insulator. The central anode electrode has been made of tin. The wavelength of the EUV emission has been measured to be in the range of 6~16 nm by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission has also been measured by the spectrometer with the wavelength range of 200~1,100 nm. The electron temperature and plasma density have been measured by the Boltzmann plot and Stark broadening methods, respectively, under the assumption of local thermodynamic equilibrium (LTE).

• The Bulletin of The Korean Astronomical Society
• /
• v.44 no.1
• /
• pp.51.3-51.3
• /
• 2019

Solar magnetograms are important for studying solar activity and predicting space weather disturbances1. Farside magnetograms can be constructed from local helioseismology without any farside data2-4, but their quality is lower than that of typical frontside magnetograms. Here we generate farside solar magnetograms from STEREO/Extreme UltraViolet Imager (EUVI) $304-{\AA}$ images using a deep learning model based on conditional generative adversarial networks (cGANs). We train the model using pairs of Solar Dynamics Observatory (SDO)/Atmospheric Imaging Assembly (AIA) $304-{\AA}$ images and SDO/Helioseismic and Magnetic Imager (HMI) magnetograms taken from 2011 to 2017 except for September and October each year. We evaluate the model by comparing pairs of SDO/HMI magnetograms and cGAN-generated magnetograms in September and October. Our method successfully generates frontside solar magnetograms from SDO/AIA $304-{\AA}$ images and these are similar to those of the SDO/HMI, with Hale-patterned active regions being well replicated. Thus we can monitor the temporal evolution of magnetic fields from the farside to the frontside of the Sun using SDO/HMI and farside magnetograms generated by our model when farside extreme-ultraviolet data are available. This study presents an application of image-to-image translation based on cGANs to scientific data.