• Title/Summary/Keyword: external quantum efficiency

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Temperature Dependence of Efficiency Droop in GaN-based Blue Light-emitting Diodes from 20 to 80℃

  • Ryu, Guen-Hwan;Seo, Dong-Joo;Ryu, Han-Youl
    • Current Optics and Photonics
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    • v.2 no.5
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    • pp.468-473
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    • 2018
  • We investigate the temperature dependence of efficiency droop in InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) in the temperature range from 20 to $80^{\circ}C$. When the external quantum efficiency (EQE) and the wall-plug efficiency (WPE) of the LED sample were measured as injection current and temperature varied, the droop of EQE and WPE was found to be reduced with increasing temperature. As the temperature increased from 20 to $80^{\circ}C$, the droop ratio of EQE was decreased from 16% to 14%. This reduction in efficiency droop with temperature can be interpreted by a temperature-dependent carrier distribution in the MQWs. When the carrier distribution and radiative recombination rate in MQWs were simulated and compared for different temperatures, the carrier distribution was found to become increasingly homogeneous as the temperature increased, which is believed to partly contribute to the reduction in efficiency droop with increasing temperature.

Electrical Properties of OLEDs due to the Hole-size of Crucible Boat and Deposition Rate of Hole Transport Layer (Crucible Boat 홀 크기와 정공 수송층 증착속도에 따른 유기밭광 다이오드의 전기적 특성)

  • Kim, Weon-Jong;Shin, Hyun-Teak;Shin, Jong-Yeol;Hong, Jin-Woong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.1
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    • pp.74-80
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    • 2009
  • In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum($Alq_3$)/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of hole transport layer (TPD) materials using hole-size of crucible boat. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5{\times}10^{-6}$ Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of $2.5\;{\AA}/s$. When the deposition rate of TPD increased from 1.5 to $3.0\;{\AA}/s$, we studied the efficiency improvement of TPD using the hole-size of crucible is 1.0 mm. When the deposition rate of TPD is $2.5\;{\AA}/s$, we found that the average roughness is rather smoother, the luminous efficiency the external quantum efficiency is superior to the others. Compared to the two from the devices made with the deposition rate of TPD is $2.0\;{\AA}/s$ and $3.0\;{\AA}/s$, the external quantum efficiency was improved by four-times and two-times, respectively.

Effect of Doping Profile of Blue Activator on the Emission Characteristics of White Organic Light Emitting Diodes (청색 활성제의 첨가 형상 변화에 따른 백색 OLED의 발광 특성)

  • Lim, Byung-Gwan;Seo, Jung-Hyun;Paek, Kyeong-Kap;Ju, Sung-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.6
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    • pp.486-490
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    • 2011
  • To investigate the effect of two-emission-layer structure on the emission characteristics of the phosphorescent white organic light-emitting diodes (PHWOLEDs), the PHWOLEDs with two different emission layers, blue EML(29 nm, FIrpic-doped mCP) and red EML(1 nm, Ir(pq)$_2$acac-doped CBP)), following host-guest system were fabricated. The bi-layered blue EML was composed of mCP:FIrpic (20 nm, 7 vol.%) and mCP:FIrpic (9 nm, 7, 10, 15, 20, and 25 vol.%, respectively). When the concentration of FIrpic was increased from 7 to 15 vol.%, light emission luminance, current efficiency, and external quantum efficiency were increased. On the contrary, when the concentration of FIrpic was increased to more than 20 vol.%, light emission luminance, current efficiency, and external quantum efficiency were decreased. The PHWOLEDs with the bi-layered blue EML structure of mCP:FIrpic (20 nm, 7 vol.%) and mCP:FIrpic (9 nm, 15 vol.%) showed current efficiency of 29.7 cd/A and external quantum efficiency (EQE) of 16.6% at 1,000 $cd/cm^2$.

Observation of Carrier Multiplication via Internal Quantum Efficiency Exceeding 100% in PbS QDs Monolayer Solar Cells

  • Park, So Yeon;Chung, Hyun Suk;Han, Gill Sang;Su, Jang Ji;Jung, Hyun Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.467.1-467.1
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    • 2014
  • Quantum dots (QD) solar cells has received considerable attention due to their potential of improving the overall conversion efficiency by harvesting excess energy via multiple excitons generation (MEG). Although there have been many reports which show MEG phenomena by using optical measurement of quantum dots themselves, carrier multiplication in real QD photovoltaic devices has been sparsely reported due to difficulty in dissociation of excitons and charge collection. In this reports, heterojunction QD solar cells composed of PbS QD monolayer on highly crystalline $TiO_2$ thin films were fabricated by using Langmuir-Blodgett deposition technique to significantly reduce charge recombination at the interfaces between each QD. The PbS CQDs monolayer was characterized by using UV-vis, transmission electron microscopy (TEM) and atomic force microscopy (AFM). The internal quantum efficiency (IQE) for the monolayer QD solar cells was obtained by measurement of external quantum efficiency and determining light absorption efficiency of active layer. Carrier multiplication was observed by measuring IQE greater than 100% over threshold photon energy. Our findings demonstrate that monolayer QD solar cell structure is potentially capable of realizing highly efficient solar cells based on carrier multiplication.

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도너층 CuPc의 두께변화에 따른 광기전력 효율 특성

  • Kim, Won-Jong;Choe, Hyeon-Min;Choe, Gwang-Jin;Kim, Tae-Wan;Hong, Jin-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.280-280
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    • 2009
  • In a structure of ITO/CuPc/Al, we have studied that the properties of photovoltaic efficiency of copper phthalocyanine(CuPc) in donor layer using simulation. As a rusult, we have confirmed that anode current density is decreased and anode voltage is increased as increasing the thickness of CuPc. Also, when the light intensities is 10 [$mW/cm^2$], the external quantum efficiency is better than the others at the best wavelength of visible spectrum..

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Improved charge balance in quantum dot light-emitting diodes using self-assembled monolayer (자기조립단분자막을 이용한 양자점 발광다이오드의 전하 균형도 개선)

  • Sangwook Park;Woon Ho Jung;Yeyun Bae;Jaehoon Lim;Jeongkyun Roh
    • Journal of IKEEE
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    • v.27 no.1
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    • pp.30-37
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    • 2023
  • To improve the efficiency and stability of colloidal quantum dot light-emitting diodes (QD-LEDs), it is essential to achieve charge balance within the QD emissive layer. Zinc oxide (ZnO) is widely used for constructing an electron transport layer in the state-of-the-art QD-LEDs, but spontaneous electron injection from ZnO often results in excessive electrons in QDs that significantly deteriorate the performance of QD-LEDs. In this study, we demonstrated the improved performance of QD-LEDs by modifying the electron injection property of ZnO with self-assembled monolayer (SAM)-treatment. As a result of improved charge balance, the external quantum efficiency and maximum luminance of QD-LEDs with SAM-treatment were improved by 25% and 200%, respectively, compared to the devices without SAM-treatment.

Electrical Characteristics of OLEDs depending on the Deposition Rate of Hole Transport Layer(TPD) (정공 수송층(TPD) 증착 속도에 따른 유기 발광 소자의 전기적 특성)

  • Kim, Weon-Jong;Lee, Young-Hwan;Lee, Sang-Kyo;Park, Hee-Doo;Cho, Kyung-Soon;Kim, Tae-Wan;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.87-88
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    • 2008
  • In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum$(Alq_3)$/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of TPD materials. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5\times10^{-6}$Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of 2.5 $\AA$/s. When the deposition rate of TPD increased from 1.5 to 3.0 $\AA$/s, we found that the average roughness is rather smoother, external quantum efficiency is superior to the others when the deposition rate of TPD is 2.5 $\AA$/s. Compared to the ones from the devices made with the deposition rate of TPD 3.0 $\AA$/s, the external quantum efficiency was improved by a factor of eight.

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Determination of photo- and electroluminescence quantum efficiency of semiconducting polymers (전기발광고분자의 양자효율 측정)

  • 이광희;박성흠;김진영;진영읍;서홍석
    • Korean Journal of Optics and Photonics
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    • v.13 no.2
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    • pp.128-133
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    • 2002
  • In a recent effort to develop polymer light-emitting diodes (LEDs) as promising flat panel display components, measurements of reliable absolute photoluminescence (PL) and electroluminescence (EL) efficiency for polymer materials are required. In this work, we performed the measurement of PL and EL efficiency of luminescent polymers using an integrating sphere technique. The external PL efficiency of MEH-PPV was estimated to be 8 ($\pm$2)% together with the value of 0.02 1m/W for the external EL efficiency. This PL efficiency is in good agreement with published values, indicating that our PL efficiency measurements are somewhat legitimate. We believe this study might contribute to the research and development of organic materials for optoelectronic devices.

Efficiency enhancement of the organic light-emitting diodes by oxygen plasma treatment of the ITO substrate

  • Hong, J.W.;Oh, D.H.;Kim, C.H.;Kim, G.Y.;Kim, T.W.
    • Journal of Ceramic Processing Research
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    • v.13 no.spc2
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    • pp.193-197
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    • 2012
  • Oxygen plasma has been treated on the surface of indium-tin-oxide (ITO) to improve the efficiency of the organic light-emitting diodes (OLEDs) device. The plasma treatment was expected to inject the holes effectively due to the control of an ITO work-function and the reduction of surface roughness. To optimize the treatment condition, a surface resistance and morphology of the ITO surface were investigated. The effect on the electrical properties of the OLEDs was evaluated as a function of oxygen plasma powers (0, 200, 250, 300, and 450 W). The electrical properties of the devices were measured in a device structure of ITO/TPD/Alq3/BCP/LiF/Al. It was found the plasma treatment of the ITO surface affects on the efficiency of the device. The efficiency of the device was optimized at the plasma power of 250 W and decreased at higher power than 250 W. The maximum values of luminance, luminous power efficiency, and external quantum efficiency of the plasma treated devices increase by 1.4 times, 1.4 times, and 1.2 times, respectively, compared to those of the non-treated ones.

Study of the Efficiency Droop Phenomena in GaN based LEDs with Different Substrate

  • Yoo, Yang-Seok;Li, Song-Mei;Kim, Je-Hyung;Gong, Su-Hyun;Na, Jong-Ho;Cho, Yong-Hoon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.172-173
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    • 2012
  • Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

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