• Current Optics and Photonics
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• 제2권5호
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• pp.468-473
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• 2018

We investigate the temperature dependence of efficiency droop in InGaN/GaN multiple-quantum-well (MQW) blue light-emitting diodes (LEDs) in the temperature range from 20 to $80^{\circ}C$. When the external quantum efficiency (EQE) and the wall-plug efficiency (WPE) of the LED sample were measured as injection current and temperature varied, the droop of EQE and WPE was found to be reduced with increasing temperature. As the temperature increased from 20 to $80^{\circ}C$, the droop ratio of EQE was decreased from 16% to 14%. This reduction in efficiency droop with temperature can be interpreted by a temperature-dependent carrier distribution in the MQWs. When the carrier distribution and radiative recombination rate in MQWs were simulated and compared for different temperatures, the carrier distribution was found to become increasingly homogeneous as the temperature increased, which is believed to partly contribute to the reduction in efficiency droop with increasing temperature.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.74-80
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• 2009

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum($Alq_3$)/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of hole transport layer (TPD) materials using hole-size of crucible boat. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5{\times}10^{-6}$ Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of $2.5\;{\AA}/s$. When the deposition rate of TPD increased from 1.5 to $3.0\;{\AA}/s$, we studied the efficiency improvement of TPD using the hole-size of crucible is 1.0 mm. When the deposition rate of TPD is $2.5\;{\AA}/s$, we found that the average roughness is rather smoother, the luminous efficiency the external quantum efficiency is superior to the others. Compared to the two from the devices made with the deposition rate of TPD is $2.0\;{\AA}/s$ and $3.0\;{\AA}/s$, the external quantum efficiency was improved by four-times and two-times, respectively.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.486-490
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• 2011

To investigate the effect of two-emission-layer structure on the emission characteristics of the phosphorescent white organic light-emitting diodes (PHWOLEDs), the PHWOLEDs with two different emission layers, blue EML(29 nm, FIrpic-doped mCP) and red EML(1 nm, Ir(pq)$_2$acac-doped CBP)), following host-guest system were fabricated. The bi-layered blue EML was composed of mCP:FIrpic (20 nm, 7 vol.%) and mCP:FIrpic (9 nm, 7, 10, 15, 20, and 25 vol.%, respectively). When the concentration of FIrpic was increased from 7 to 15 vol.%, light emission luminance, current efficiency, and external quantum efficiency were increased. On the contrary, when the concentration of FIrpic was increased to more than 20 vol.%, light emission luminance, current efficiency, and external quantum efficiency were decreased. The PHWOLEDs with the bi-layered blue EML structure of mCP:FIrpic (20 nm, 7 vol.%) and mCP:FIrpic (9 nm, 15 vol.%) showed current efficiency of 29.7 cd/A and external quantum efficiency (EQE) of 16.6% at 1,000 $cd/cm^2$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.467.1-467.1
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• 2014

Quantum dots (QD) solar cells has received considerable attention due to their potential of improving the overall conversion efficiency by harvesting excess energy via multiple excitons generation (MEG). Although there have been many reports which show MEG phenomena by using optical measurement of quantum dots themselves, carrier multiplication in real QD photovoltaic devices has been sparsely reported due to difficulty in dissociation of excitons and charge collection. In this reports, heterojunction QD solar cells composed of PbS QD monolayer on highly crystalline $TiO_2$ thin films were fabricated by using Langmuir-Blodgett deposition technique to significantly reduce charge recombination at the interfaces between each QD. The PbS CQDs monolayer was characterized by using UV-vis, transmission electron microscopy (TEM) and atomic force microscopy (AFM). The internal quantum efficiency (IQE) for the monolayer QD solar cells was obtained by measurement of external quantum efficiency and determining light absorption efficiency of active layer. Carrier multiplication was observed by measuring IQE greater than 100% over threshold photon energy. Our findings demonstrate that monolayer QD solar cell structure is potentially capable of realizing highly efficient solar cells based on carrier multiplication.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.280-280
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• 2009

In a structure of ITO/CuPc/Al, we have studied that the properties of photovoltaic efficiency of copper phthalocyanine(CuPc) in donor layer using simulation. As a rusult, we have confirmed that anode current density is decreased and anode voltage is increased as increasing the thickness of CuPc. Also, when the light intensities is 10 [$mW/cm^2$], the external quantum efficiency is better than the others at the best wavelength of visible spectrum..

• 전기전자학회논문지
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• 제27권1호
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• pp.30-37
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• 2023

양자점 발광 다이오드(QD-LED)의 효율과 안정성 향상을 위해서 QD 발광층에 주입되는 전하의 균형을 이루는 것은 필수이다. 산화 아연(ZnO)은 최신 QD-LED에서 전자수송층(electron transport layer, ETL)을 구성하기 위해 가장 많이 사용되고 있으나, ZnO의 자발적인 전자 주입은 QD-LED의 성능을 크게 열화시키는 과도한 전자 주입을 유발한다. 본 연구에서는 자기조립단분자막(self-assembled monolayer, SAM) 처리를 통해 ZnO의 전자 주입 특성을 조절하여 QD-LED의 성능을 향상시켰다. 전하 균형도를 향상시킨 결과, SAM을 처리한 QD-LED는 SAM을 처리 안한 소자와 비교하여 내부 양자 효율(external quantum efficiency, EQE)이 25%, 최대 휘도는 200% 향상되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.87-88
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• 2008

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum$(Alq_3)$/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of TPD materials. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5\times10^{-6}$Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of 2.5 $\AA$/s. When the deposition rate of TPD increased from 1.5 to 3.0 $\AA$/s, we found that the average roughness is rather smoother, external quantum efficiency is superior to the others when the deposition rate of TPD is 2.5 $\AA$/s. Compared to the ones from the devices made with the deposition rate of TPD 3.0 $\AA$/s, the external quantum efficiency was improved by a factor of eight.

• 한국광학회지
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• 제13권2호
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• pp.128-133
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• 2002

최근 주목을 받고 있는 고분자 발광다이오드의 개발에 있어서, 발광고분자의 Photoluminescence(PL)와 Electroluminescence (EL) 양자효율 측정은 소자의 성능개선 연구 등에 있어서 가장 핵심적인 요소 중 하나로 여겨진다. 이러한 이유에서 본 연구에서는 잘 알려진 발광고분자인 Poly(2-methoxy-5(-(2-ethyl-hexyloxy)- 1,4-phenylenevinylene) (MEH- PPV)를 이용하여 시편을 제작하고, 적분구 측정법을 이용하여 이의 P교라 EL 양자효율을 구하였다. 그 결과 본 연구진이 개발한 MEH-PPV의 PL 양자효율은 8$\pm$2%로 측정되었는데, 이는 세계적으로 알려져 있는 ～9%의 결과에 거의 접근함을 보였다. 한편, 이 물질을 이용하여 고분자 발광다이오드를 제작한 결과, 이의 EL양자효율은 0.02 1m/W로 측정되었다. 본 연구를 통하여 확립된 발광고분자의 양자효율 측정법은 국내의 유기발광소자 연구에 큰 기여를 하리라 기대된다.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.193-197
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• 2012

Oxygen plasma has been treated on the surface of indium-tin-oxide (ITO) to improve the efficiency of the organic light-emitting diodes (OLEDs) device. The plasma treatment was expected to inject the holes effectively due to the control of an ITO work-function and the reduction of surface roughness. To optimize the treatment condition, a surface resistance and morphology of the ITO surface were investigated. The effect on the electrical properties of the OLEDs was evaluated as a function of oxygen plasma powers (0, 200, 250, 300, and 450 W). The electrical properties of the devices were measured in a device structure of ITO/TPD/Alq3/BCP/LiF/Al. It was found the plasma treatment of the ITO surface affects on the efficiency of the device. The efficiency of the device was optimized at the plasma power of 250 W and decreased at higher power than 250 W. The maximum values of luminance, luminous power efficiency, and external quantum efficiency of the plasma treated devices increase by 1.4 times, 1.4 times, and 1.2 times, respectively, compared to those of the non-treated ones.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.