• KIEE International Transactions on Electrophysics and Applications
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• 제3C권1호
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• pp.19-22
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• 2003

The co-evaporated cathodes composed of A1 and CsF is adopted to enhance the electrical and the optical properties of organic light emitting diodes (OLEDs). The hole transport layer (HTL), made of 50nm thick N,N-dipheny1-N,N-bis(3-methylphenyl)-1,1-bipheny14,4-diamine (TPD), and the electron transport layer (ETL), made of 50nm thick tris(8-hydroxy-quinoline) aluminum (A1q$_3$), were deposited under the base pressure of 1.6$\times$10$^{-6}$ Torr. In depositing A1-CsF, the mass ratio of CsF is varied between 1 and 10wt%. OLEDs with co-evaporated cathodes have luminance of about 35,000cd/$m^2$, and external quantum efficiency of about 1.38%. Cs tends to diffuse into the organic layer and then re-forms Cs$^{+}$cation and free electron with the Cs-doped surface region.n.

• Transactions on Electrical and Electronic Materials
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• 제15권1호
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• pp.41-44
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• 2014

Emission properties of the organic light-emitting diodes were investigated with the use of a hole-injection layer of copper(II)-phthalocyanine (CuPc). The manufactured device structure is indium-tin-oxide (ITO) (180 nm)/CuPc (0~50 nm)/N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD) (40 nm)/tris-(8-hydroxyquinoline) aluminum (III) ($Alq_3$) (60 nm)/Al(100 nm). We investigated the luminescence properties of $Alq_3$ which is affected by the CuPc hole-injection layer. Also, we studied the influence of light-emission properties in the structure of an ITO/CuPc/TPD/$Alq_3$/Al device depending on the several thicknesses of CuPc (0~50 nm) layer. As a result, it was found that the hole injection occurs smoothly in the device with 20 nm thick CuPc layer, and the properties become significantly worse in the device with a CuPc layer thickness higher than 40 nm. We studied the topography and external quantum efficiency depending on the layer thickness of CuPc. Also, we analyzed the electroluminescent characteristics in the low and high-voltage range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.332-335
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• 2000

We fabricated organic electroluminescent (EL) devices with single layer of poly(3-dodeoylthiophene) (P3DoDT) hlended with different amounts of poly(N-vinylcarbazole) (PVK) as a emitting layer. The molar ratio between P3DoDT and PVK changed with 1:0, 2:1 and 1:1. To improve the external quantum efficiency of EL devices, we applied insulating layer, LiF layer, between polymer emitting layer and Al electrode. All of the devices emit orange-red light and it's can be explained that the energy transfer occurs from PVK to P3DoDT. In the voltage-current and voltage-brightness characteristics of devices applied LiF layer, current and brightness increased with increasing applied voltage. The brightness of the device have a molar ratio 1:1 with LiF layer was about 10 times larger than that of the device without PVK at 6V. Electrical impedance properties of ITO/emitting layer/LiF/Al devices were investigated. In the Cole-Cole plots of impedance data, one semicircle was observed. Therefore, the equivalent circuit for the devices can be designed as a single parallel resistor and capacitor network with series resistor.

• 한국재료학회지
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• 제32권11호
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• pp.449-457
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• 2022

Halide perovskites are emerging materials for next-generation display applications, thanks to their narrow emission linewidth and band gap tunability, capable of covering the entire range of visible light. Despite their short period of research, perovskite light emitting diodes (PeLEDs) have shown rapid progress in device external quantum efficiency (EQE) in the near-infrared (NIR), red, and green emission wavelengths, and the record EQE has exceeded over 20 %. However there has been limited progress with blue emission compared to the red and green counterparts. In this review, the current status and challenges of blue PeLEDs are introduced, and strategies to produce spectrally stable blue PeLEDs are discussed. The strategies include 1) a mixed halide system in the form of 3-dimensional (3D) perovskites, 2) colloidal perovskite nanocrystals and 3) low dimensional perovskites, known as quasi-2D perovskites. In the mixed halide system, previous reports based on the compositional engineering of 3D perovskites to reduce spectral instability (i.e., halide segregation) will be discussed. Since spectral instability issue originate from the mixed halide composition in perovskites, the two other strategies are based on enlarging the band gap with a single halide composition. Finally, the prospects for each strategy are discussed, for further improvement in spectrally stable blue PeLEDs.

• 한국전기전자재료학회논문지
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• 제36권3호
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• pp.286-291
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• 2023

Perovskite materials are promising candidates for next-generation optoelectronic devices owing to their outstanding external quantum efficiency, high color purity, and ability to tune the light emission wavelength. However, conventional thermal annealing processes caused the degradation of perovskite, resulting in poor optoelectronic properties and a short lifetime. Herein, we propose a laser-induced recrystallization of perovskite thin film to enhance its light-emitting properties. Laser-induced recrystallization process was performed using rapid and instantaneous laser heating, which successfully induced grain growth of the perovskite material. The laser processing conditions were thoroughly optimized based on theoretical calculations and various material analyses such as x-ray diffraction, scanning electron microscope, and photoluminescence spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.418-419
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• 2013

현재, 인듐 주석 산화물(indium tin oxide, ITO) 박막은 가시영역에서 전기적 특성 및 광학적 특성이 우수하기 때문에 평면 디스플레이(flat displays), 박막 트랜지스터(thin film transistors), 태양전지(solar cells) 등을 포함한 광소자에 투명전도성산화물(transparent conducting oxide, TCO) 전극으로 가장 일반적으로 사용되고 있다. 하지만, 이 물질은 밴드갭이 3.4 eV로 다소 작아 다양한 분야의 의료기기, 환경 보호에 응용 가능한 자외선 영역에서 상당히 많은 양의 광흡수가 발생하는 치명적인 문제점을 가지고 있다. 또한, 인듐(Indium)의 급속한 소비는 인듐의 매장량의 한계로 인해 가격을 상승시키는 주요한 원인으로 작용하고 있다. 한편, InGaN 기반의 자외선 발광다이오드 분야에서는 팔라듐(Pd) 기반의 반투명 전극과 은(Ag) 기반의 반사전극을 주로 사용하고 있지만, 낮은 투과도와 낮은 굴절률을 때문에 여전히 자외선 발광다이오드의 광추출 효율(extraction efficiency)에 문제점을 가지고 있다. 따라서 자외선 발광다이오드의 외부양자 효율(external quantum efficiency, EQE)을 높이기 위해 높은 투과도와 GaN와 유사한 굴절률을 가지는 p-형 오믹 전극을 개발해야 한다. 본 연구에서는 초박막의 ITO (16 nm)/Ag (7 nm)/ITO (16 nm) 다층 구조를 갖는 투명전도성 전극을 제작한 후, 열처리 온도에 따른 전기, 광학적 특성에 향상에 대해서 조사하였다. 사용된 산화물/금속/산화물 전극의 구조는 유기발광 다이오드(organic light emitting diode, OLED), 태양전지 등에 많이 사용되는 안정적인 투명 전극을 자외선 LED 소자에 처음 적용하여, ITO의 전체 사용량은 줄이고, ITO 사이에 금속을 삽임함으로써 금속에 의한 전기적 특성 향상과 플라즈몬 효과에 의한 투과도를 높일 수 있는 장점을 가지고 있다. 실험 결과로는, $400^{\circ}C$에서 열처리한 ITO/Ag/ITO 다층 구조는 365 nm에서 84%의 광학적 특성과 9.644 omh/sq의 전기적 특성을 확인하였다. 실험 결과로부터 좀 더 최적화를 수행하면, ITO/Ag/ITO 다층 구조는 자외선 발광다이오드의 투명전도성 전극으로 사용될 수 있을 것이라 기대된다.

• Current Photovoltaic Research
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• 제5권1호
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• pp.1-8
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• 2017

Two different fluorine-doped tin oxide (FTO)-coated glass substrates were investigated to find better suitability for CdTe solar cells. Substrate A consisted of FTO (300 nm)/$SiO_2$ (24 nm)/intrinsic $SnO_2$ (30 nm)/borosilicate glass (2.2 mm), and substrate B consisted of FTO (700 nm)/intrinsic $SnO_2$ (30nm)/borosilicate glass (1.8 mm). The overall thickness of the FTO/glass substrates was about 2.5 mm. The total light transmittance of substrate B was much higher than that of substrate A throughout the whole spectral region, even though the thickness of the FTO in substrate B was twice larger than that of the FTO in the substrate A. The short-circuit current greatly increased in substrate B and the external quantum efficiency (EQE) increased over the whole wavelength range. This study shows that the diffuse optical transmittance played a key role in the large EQE value in the blue wavelength region, and the direct transmittance played a key role in the large EQE value in the red wavelength region. The higher transmittance is due to the rough surface generated by the thicker FTO on glass. The conversion efficiency of the CdTe solar cell increased from 12.4 to 15.1% in combination of rough FTO substrate and Cu solution back contact.

• 한국응용과학기술학회지
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• 제29권3호
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• pp.459-465
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• 2012

본 연구에서 7,7'-(2,2'dimethoxy-1,1'-binaphthyl-3,3'-diyl) bis(4-(thiophen-2-yl) benzo[e] [1,2,5] thiadiazole (TBT) 라는 binaphthyl기를 기반으로 가지는 녹색 도판트 물질을 합성하였다. 추가적으로 인광 발광 물질인 iridium(III)bis[(4,6-di-fluoropheny)-pyridinato -N,C2]picolinate (FIrpic)을 홀 수송용 호스트 물질인 N,N'-dicarbazolyl-3,5-benzene (mCP)에 도핑하고, TBT와 bis(2-phenylquinolinato)-acetylacetonate iridium(III) (Ir(pq)2acac)를 전자 수송용 호스트 물질인 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi)에 도핑하여 백색 빛을 발광하는 white organic light emitting diode (OLED)를 제작하였다. TBT를 사용하여 제작한 white OLED의 최대발광 효율과 외부 양자 효율은 각각 5.94 cd/A 과 3.23%를 나타냄을 알 수 있었다. Commission Internationale de I'Eclairage (CIE) 색 좌표의 값은 1000 nit에서 (0.34, 0.36)을 띄면서 순백색을 구현함을 확인하였다.

• 공업화학
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• 제26권6호
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• pp.725-729
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• 2015

유기발광다이오드(organic light emitting diodes, OLEDs)는 높은 효율, 안정성, 신물질 개발과 같은 연구들을 바탕으로 차세대 디스플레이 및 조명으로써의 높은 기술력과 학문적 발전을 달성하였다. 본 논문에서는 hexaazatrinaphthylene (HAT) 유도체들을 OLEDs 소자의 정공주입층으로 사용하여 제작된 고효율의 녹색 인광 OLEDs 소자의 특성을 연구하였다. Indium Tin Oxide (ITO)전극과 정공수송층 사이에 삽입된 박막의 HAT 유도체층은 $1,000cd/m^2$의 구동 조건에서 OLEDs 소자의 외부양자효율을 기존의 8.8%에서 13.6%로, 전류효율을 30.8 cd/A에서 47.7 cd/A로 각각 향상시켰다. 삽입된 HAT 유도체층은 발광층 내부에서 최적화된 전자-정공의 균형을 이루게 하여 소자의 효율 향상에 기여하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.773-776
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• 2002

Efficient organic white light-emitting diodes are fabricated by doping [bis(2-methyl-8-quinolinolato) (tripheny-siloxy)aluminium (III)] (SAlq), a blue-emitting layer, with a red fluorescent dye of 4-dicyanomethylene-2-methyl-6-{2-(2,3,6,7-tetrahydro-1H,5H-benzo[i,j]quinolizin-8-yl)vinyl}-4H-pyran (DCM2). The incomplete energy transfer from blue-emitting SAlq to red-emitting DCM2 enables to obtain a balanced white light-emission. A device with the structure of ITO/TPD (50 nm)/SAlq:DCM2 (30 nm, 0.5 %)/$Alq_3$ (20 nm)/LiF (0.5 nm)/AI shows emission peaks at 456 nm and 482 nm from SAlq and at 570 nm from DCM2. The white light-emitting device shows an external quantum efficiency of about 2.3 %, a luminous efficiency of about 2.4 lm/W, and the CIE chromaticity coordinates of (0.32, 0.37) at 100 cd/m^2. A maximum luminance of about 23,800 cd/m^2. is obtained at 15 V and the current density of 782 mA/cm^2.