• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.06a
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• pp.60-65
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• 2006

Previous studies demonstrated that laser ablation under transparent liquid can result in ablation enhacement and particle removal from the surface. In this work, the liquid-assisted excimer laser ablation process is examined fer polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), Si, and alumina with emphasis on ablation enhacement, surface topography, and debris formation. In the case of PET and PMMA, the effect of liquid is analyzed both fer thin water film and bulk water. As the ablation enhanement by liquid is already known for Si and alumina, the analysis focuses on surface topography and debris formation resulting from the liquid-assisted laser ablation process. The results show that application of liquid increases the ablation rate of PMMA while that of PET remains unchanged even in the liquid-assisted process. It is also revealed that the liquid can significantly improve the surface quality by reducing the debris deposition. However, the surface roughness is generally deteriorated in the liquid-assisted process. The surface toporaphy is found to be strongly dependent on the method of liquid application, i.e., thin film or bulk liquid.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.349-352
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• 2001

In this paper, novel device structure in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA) for ultra pn junction formation. Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20 nm for arsenic dosage (2$\times$10$^{14}$ $\textrm{cm}^2$), excimer laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.701-707
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• 2010

We have synthesized new pure blue-emitting hyperbranched polyfluorene (Hyper-PDHF) through $A_2$ and $B_3$ type monomers via Suzuki coupling polymerization. The weight-average molecular weights ($M_w$) of the Hyper-PDHF was found about 35,000 with polydispersity index as 6.1. The UV absorption peak of the Hyper-PDHF film was at around 335 nm which was far blue shifted than that of linear PDHF film which was found at 380 nm. The pure blue photoluminescene (PL) peak of the Hyper-PDHF was measured at 419 nm as main emission with 397 and 444 nm as shoulder peaks. The Hyper-PDHF showed also higher PL quantum efficiency in solution than linear PDHF (Hyper-PDHF, $\Phi$sol =0.81; PDHF, $\Phi$sol=0.78). The annealed PDHF film (5 hrs on hot plate at $80^{\circ}C$) showed increased shoulder peak emissions and emission color was changed into the green emission. But, Hyper-PDHF film shows almost no excimer emission peak even the film was annealed. The enhanced PL efficiency and no excimer emission of Hyper-PDHF results from the inhibition of excimer formation by the introduction of the hyperbranched system into the polyfluorene backbone.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.993-996
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• 2012

We investigated fluorescence and fluorescence excitation of diphenylsilane (DPS) in a solution and molecular beams in combination with the aid of the DFT method. When the molecule was photoexcited at 250 nm in a cyclohexane solution, normal and excimer fluorescences were observed in the ranges of 260-320 and 330-450 nm, respectively. The fluorescence excitation spectrum indicates that the channel leading to the intramolecular excimer formation is not efficient in comparison with the normal fluorescence. Vibrationally resolved fluorescence excitation spectra were measured for the DPS molecules cooled in pulsed supersonic expansion of He in the range 262.2-271.7 nm, in which we can see several electronic excitation spectra exhibiting the electronic band origins. We found that the simulated absorption spectrum based on the time-dependent densityfunctional theory calculations accords well with the absorption spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.562-565
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• 2001

In this paper, novel device structures in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA). Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20nm for arsenic dosage(2${\times}$10$\_$14//$\textrm{cm}^2$), exciter laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm and realized sub-50nm n-MOSFET.

• Laser Solutions
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• v.11 no.1
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• pp.12-18
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• 2008

Laser micromachining is a promising technique to fabricate the micro-scale devices. However, there remains important challenges to reducethe redeposition of ablated materials around the laser irradiated zone and to get a smooth surface, especially for metal and semiconductor materials. To achieve the high-quality micromachined devices, various methods have been developed. Liquid-assisted micromachining can be a good solution to overcome the previously mentioned problems. During the laser ablation process, the liquid around the solid sample dramatically changes the ablation characteristics, such as ablation rate, surface profile, formation of debris, and so on. In this investigation, we conducted the laser micromachining of Si in various liquid environmental conditions, such as liquid types, liquid thickness. In addition, using nanoscale time-resolved shadowgraphy technique, we observed the ablation process in liquid environments to understand the mechanism of liquid-assisted laser micromachining.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.12
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• pp.559-561
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• 2003

We report a new excimer laser annealing method which successfully results in a single grain boundary formation in the channel of polycrystalline silicon thin film transistor. The proposed method is based on lateral grain growth and employs aluminum patterns which act as selective beam mask and lateral heat sink. The maximum grain size obtained by the proposed method is about 1.6${\mu}{\textrm}{m}$ in the length. The grainboundaries should be arranged parallel with the direction of current flow for the best device performance, so we propose a new device fabrication method and a new poly-Si TFT structure. Poly-Si TFT fabricated by the proposed method exhibits considerably improved electrical characteristics, such as high field effect mobility exceeding 240 $cm^2$/Vsec.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.251-253
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• 1996

High temperature superconducting (HTS) target has been irradiated by excimer laser beam. The surface of HTS target has been changed and showed the formation of cones. The laser ablated HTS target surface has been systematically studied using a scanning electron microscope. A KrF excimer laser with a wavelength of 248 nm was used to ablate the HTS YBCO target. The size of laser beam focused on the target showed a rectangular shape of $9.7{\times}2\;mm^2$. The image of SEM shows the difference between the shapes of cones fanned at the boundary and at the center of the ablated area after 1,000 laser pulses.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1271-1273
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• 1993

$SiO_2$ and SiON films are formed by Laser CVD for inter-level dielectrics in submicron VLSI. This technique is noticeable that film formation can be done at low temperatures, below $300^{\circ}C$ with less damage. An ArF Excimer Laser with wave length of 193nm is used to excite and dissociate reactant gases. After film formation growth rate, refractive index, I-V curve, and step coverage characteristics of the films were evaluated.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.29-32
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• 2002

This paper describes a novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension(SDE)region. A new ultra-shallow junction formation technology. Which is based on damage-free process for rcplacing of low energy ion implantation, is realized using ultra-high vacuum chemical vapor deposition(UHVCVD) and excimer laser annealing(ELA).