• Journal of Welding and Joining
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• 제23권5호
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• pp.49-54
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• 2005

The effective charge number and the critical current density of electromigration in eutetic SnPb and Pb Free $(SnAg_{3.8}Cu_{0.7)$ flip chip solder bumps are studied. The effective charge number of electromigration in eutectic SnPb solder is obtained as 34 and the critical current density is $j=0.169{\times}({\delta}_{\sigma}/{\delta}_x})\;A/cm^2,\;where\;({\delta}_{\sigma}/{\delta}_x})$ is the electromigration-induced compressive stress gradient along the length of the line. While the effect of electromigration in Pb free solder is much smaller than that in eutectic SnPb, the product of diffusivity and effective charge number $DZ^{\ast}$ has been assumed as $6.62{\times}10^{-11}$. The critical length for electromigration are also discussed.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.63-67
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• 2003

Electromigration characteristics of $SnAg_3Cu_{0.7}$ and eutectic SnPb solder were studied using thin stripe-type test structures. Significant changes in the microstructure of two solders were observed after electromigration test, in which the temperature and the current density were varied from 90 to $110^{\circ}C$ and from $4.0\times10^4\;A/cm^2\;to\;9.2\times10^4\;A/cm^2$. In SnAgCu solders, hillocks were main]y observed near the anode end. From resistance measurements, it was calculated that the activation energy of the SnAgCu solder for electromigration was 1.04 eV And in eutectic SnPb without the effect of pads, while depleted region was found near cathode end, Sn-rich hillocks were observed near the anode end. During eutectic SnPb electromigration, it were observed that electromigration behavior had two migration modes.

• 마이크로전자및패키징학회지
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• 제12권4호통권37호
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• pp.281-287
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• 2005

공정조성의 SnPb 솔더 선형시편에서 electromigration 현상을 실시간 주사전자현미경을 이용하여 관찰하였다. 공정조성 SnPb 솔더시편에 대한 electronigration 실험은 ${\times}10^4A/cm^2,\;90^{\circ}C$에서 실시하였다. 주사전자현미경 챔버 내에서 진행되는 electromigration 실험 동안 음극의 보이드 형성과 양극의 힐록 성장을 실시간으로 관찰하였다. 음극에서 일어나는 보이드 크기를 실시간 관찰한 결과, 공정조성 SnPb 솔더의 electromigration 거동은 보이드 형성 전에 가지는 잠복기의 존재를 명확히 알 수 있었고, 본 결과는 electromigration 거동으로 인한 플립칩 솔더 범프의 보이드 생성에 대한 잠복기와 관련이 있었다.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.19-25
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• 2003

Electromigration characteristics of eutectic SnPb solder were studied using thin stripe-type test structures. Significant changes in the microstructure were observed after electromigration test, in which the temperature and the current density were varied from 80 to 100 $^{\circ}C$ and from 4.6${\times}$10$^4$A/$\textrm{cm}^2$ to 8.7${\times}$10$^4$A/$\textrm{cm}^2$. While voids or local thinning were found near the cathode end, hillocks were mainly observed near the anode end. From resistance measurements, it was calculated that the activation energy of the eutectic SnPb solder for electromigration was 0.77 eV. The dominant migrating element along the electron flow at 100$^{\circ}C$ was Pb.

• 한국재료학회지
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• 제17권7호
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• pp.371-375
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• 2007

In-situ observation of electromigration behavior of eutectic SnPb solder was performed as a function of line length at $100^{\circ}C$, $6{\times}10^4A/cm$ condition in a scanning electron microscope chamber. The incubation time for edge drift and the edge drift velocity increase as line length increases, which are discussed with the void nucleation stage of solder bump and the electromigration back flux force, respectively. Finally, the existence of electromigration product (jL) and its line length dependency are also discussed.

• Transactions on Electrical and Electronic Materials
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• 제15권3호
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• pp.155-158
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• 2014

The phase transformation of Sn-Pb-Bi solder for photovoltaic ribbon during soldering was studied using real-time synchrotron x-ray scattering. At room temperature, Sn and Pb crystal phases in the solder existed separately. By heating to $92^{\circ}C$, a new PbBi alloy crystal phase was formed, which grew further up to $160^{\circ}C$. The Sn crystal phase first started to melt at $160^{\circ}C$, and was mostly melted at $165^{\circ}C$. In contrast, the Pb and PbBi crystal phases started to melt at $165^{\circ}C$, and were mostly melted at $170^{\circ}C$. The useful result was obtained, that the solder's melting temperature decreased from $183^{\circ}C$ to $170^{\circ}C$ by addition of a small amount of Bi atoms to the eutectic Sn62-Pb38 (wt%) solder. Our study first revealed the detailed in-situ phase transformation of Sn-Pb-Bi solder during heating to the eutectic temperature. Considering the results of peel strength and hardness, adding 1 wt% of Bi atoms to the Sn62-Pb38 (wt%) solder produced an appropriate composition.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 1998년도 특별강연 및 추계학술발표 개요집
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• pp.141-142
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• 1998

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2004년도 추계 기술심포지움 초록집
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• pp.32-32
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• 2004

• 한국재료학회:학술대회논문집
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• 한국재료학회 1992년도 춘계학술발표회
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• pp.17-18
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• 1992

• 한국전기전자재료학회논문지
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• 제36권2호
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• pp.186-190
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• 2023

We studied the various characteristics of Sn-In (wt%) Pb-free solders for photovoltaic ribbon application. The solders near the eutectic composition of Sn₄₈In₅₂ (wt%) existed in InSn₄ and In₃Sn alloy phases, and in In crystal phase, but not in Sn crystal phase. In addition, the InSn₄ phase (γ-alloy) existed separately from the In₃Sn (β-alloy) and the In phase confirmed by an SEM-EDS-mapping. The melting temperature of the eutectic solder of Sn₄₈In₅₂ (wt%) was 119.2℃, and when the Sn content decreased in reference to the eutectic composition, it slightly increased to 121.4℃, but when the Sn content increased, it remained almost constant at 119.1℃. The peel strength of the ribbon plated with the Sn₄₂In₅₈ (wt%) solder was 38.7 N/mm², and it tended to increase when the Sn content increased. The peel strength of the eutectic Sn₄₈In₅₂ (wt%) solder was 53.6 N/mm², and that of the Sn₅₁In₄₉ (wt%) solder was 61.6 N/mm² that was the highest.