• The Korean Journal of Ceramics
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• 제4권3호
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• pp.213-221
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• 1998

$BaCe_{0.9}Gd_{0.1_O_{2.95}$ powder was synthesized by oxalate coprecipitation method. Precipitate with a stoichimetric ratio of the cations was prepared by adding a mixture of Ba, Ce and Gd nitrate solution to an oxalic acid solution at pH 4. Reaction between the constituent oxides to form a perovskite phase was initiated at $800^{\circ}C$ and a single phase $BaCe_{0.9}Gd_{0.1_O_{2.95}$ powder having good sinterability was obtained after calcination at $1000^{\circ}C$. Sintering green compacts of this powder for 6 h showed a considerable densification to start at $1100^{\circ}C$ and resulted in 93% and 97% relative densities at $1300^{\circ}$ and at $1450^{\circ}C$, respectively. Whereas the power compacts prepared by solid state reaction had lower relative densities, 78% at $1300^{\circ}$and 90% at $1450^{\circ}C$. Fine particles of $CeO_2$ second phase were observed in the surface of the sintered compacts. This was attributed to the evaporation of BaO from the surface that had been exposed during thermal etching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.409-412
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• 1997

The phenomenon of water tree degradation of underground distribution power cables is taking place in polymeric insulation materials under the existence of water and application of electric stress, but water tree is not easy to observe, o water tree features in power cables are shown after cutting and dying with methyleneblue. In previous method, it is impossible to acquire continuous treeing data, and when the insulation material has been cut, the micro crack(water tree) has been damaged. In this paper, to overcome these deflects, the etching method is made use of making needle electrode about 170[${\mu}{\textrm}{m}$] diameter, and AgNO$_3$(silver nitrate) solution is used as liquid electrode to accelerate the growth of water trees. As a result of this study, water tree is observed in real-time with microscope. Electrical tree owing to water treeing is initiated at low electric field and grown with discontinuous. Namely, water tree is shown up a different characteristics of tree growth.

• Progress in Superconductivity and Cryogenics
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• 제25권4호
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• pp.50-53
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• 2023

In this study, the photolithography process was chosen to reduce the aspect ratio of the cross-section of a high-temperature superconducting (HTS) tape by dividing the superconducting layer of the tape. Reducing the aspect ratio decreases the magnetization losses in the second-generation HTS tapes generated by AC magnetic fields. The HTS tape used in the experiment has a thin silver (Ag) layer of about 2 ㎛ on top of the REBCO superconducting layer and no additional stabilizer layer. A dry film resist (DFR) was laminated on top of the HTS tape by a lamination method for the segmentation. Exposure to a 395 nm UV lamp on a patterned mask cures the DFR. Dipping with a 1% Na₂CO₃ solution was followed to develop the uncured film side and to obtain the required pattern. The silver and superconducting layers of the REBCO films were cleaned with an acid solution after the etching. Finally, the segmented HTS tape was completed by stripping the DFR film with acetone.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.262-262
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• 2016

최근 고해상도 디스플레이가 주목받으면서 기존 비정질 실리콘(a-Si)을 대체할 수 있는 재료에 관한 연구가 활발히 진행되고 있다. a-Si의 경우 간단한 공정 과정, 적은 생산비용, 대면적화가 가능하다는 장점이 있지만 전자 이동도가 매우 낮은 단점이 있다. 반면, 산화물 반도체는 비정질 상태에서 전자 이동도가 높으며 큰 밴드갭을 가지고 있어 투명한 특성을 나타낼 뿐만 아니라, 저온공정이 가능하여 기판의 제한이 없는 장점을 가지고 있다. 대표적으로 가장 널리 연구되고 있는 산화물 반도체는 a-IGZO(amorphous indium-gallium-zinc oxide)이다. 그러나 InZnO(IZO) 기반의 산화물 반도체에서 carrier suppressor 역할을 하는 Ga(gallium)은 수요에 대한 공급이 원활하지 못하여 비싸다는 단점이 있다. 그러므로 경제적이면서 a-IGZO와 유사한 전기적 특성을 나타낼 수 있는 suppressor 물질이 필요하다. 따라서 본 연구에서는 IZO 기반의 산화물 반도체에서 Ga을 Hf(hafnium), Zr(zirconium), Si(silicon)으로 대체하여 용액증착(solution-deposition) 공정으로 각각의 채널층을 형성한 back-gate type의 박막 트랜지스터(thin-film transistor, TFT) 소자를 제작하였다. 용액증착 공정은 물질의 비율을 자유롭게 조절할 수 있고, 대기압의 조건에서도 공정이 가능하기 때문에 짧은 공정시간과 저비용의 장점이 있다. 제작된 소자는 p-type Si 위에 게이트 절연막으로 100 nm의 열산화막이 성장된 기판을 사용하였다. 표준 RCA 클리닝 후에 각 solution 물질을 spin coating 방식으로 증착하였다. 이후, photolithography, develop, wet etching의 과정을 거쳐 채널층 패턴을 형성하였다. 또한, 산화물 반도체의 전기적 특성을 향상시키기 위해서 후속 열처리 과정(post deposition annealing, PDA)은 필수적이다. CTA 방식은 높은 열처리 온도와 긴 열처리 시간의 단점이 있다. 따라서, 본 연구에서는 $100^{\circ}C$ 이하의 낮은 온도와 짧은 열처리 시간의 장점을 가지는 MWI (microwave irradiation)를 후속 열처리로 진행하였다. 그 결과, 각 물질로 구현된 소자들은 기존 a-IGZO와 비교하여 적은 양의 carrier suppressor로도 우수한 전기적 특성 및 안정성을 얻을 수 있었다. 따라서, Si, Hf, Zr 기반의 산화물 반도체는 기존의 Ga을 대체하여 저비용으로 디스플레이를 구현할 수 있는 IZO 기반 재료로 기대된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.116-119
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• 2003

Self-patterning of thin films using photosensitive sol solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. In this study, ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) and $La_{0.5}Sr_{0.5}CoO_3$(LSCO)thin films have been prepared by spin coating method using photosensitive sol solution. $Sr(OC_2H5)_2$, $Bi(TMHD)_3$ and $Ta(OC_2H)_5)_5$ were used as starting materials for SBT solution and $La(OCH_2CH_2OCH_3)_3$, $Sr(OC_2H_5)_2$, $CO(OCH_2CH_2OCH_3)_2$ were used for LSCO solution. Solubility difference by UV irradiation on LSCO thin film allows to obtain a fine patterning due to M-O-M bond formation. The lowest resistivity($4{\times}10^{-3}{\Omega}cm$) of LSCO thin films was obtained by annealing at $740^{\circ}C$.

• The korean journal of orthodontics
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• 제27권5호
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• pp.839-852
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• 1997

It has been submitted that different ion solutions containing sulfate induce crystal growth and might substitute conventional acid etching for pretreatment of enamel in orthodontic bonding(${\AA}rtun$ et al., Am. J. Orthod. 85, 333, 1984). This investigation was designed to evaluate the relevance of crystal growth on the enamel surface as an alternative to conventional acid etching in direct bonding of orthodontic brackets. Annexing Li2SO4, MgSO4, K2SO4 respectively in the solution with $25\%$ polyacrylic md 0.3M sulfuric acids were employed to enhance the crystal growth. Human bicuspids were treated with various parameters as combinations of crystal growth and glass ionomer cement, crystal growth and orthodontic resin, acid etching and orthodontic resin for an investigative purpose. Crystal growth solution containing MgSO4 showed the highest shear bond strength(15.6MPa) within the groups of bonding brackets with glass ionomer cement(p<0.01). Bonding with glass ionomer cement on the surface of crystal growth demonstrated higher shear bond strength than with orthodontic resin(p<0.001). Bonding with glass ionomer cement on the surface treated with crystal growth solution containing MgSO4 or K2SO4 was not different shear bond strength statistically from bonding with orthodontic resin on the acid-etched surface. It suggests that bonding brackets with glass ionomer cement on the surface treated with crystal growth solution containing MgSO4 or K2SO4 is a potential alternative to bonding with resin on the acid etched sufrace.

• Journal of the korean academy of Pediatric Dentistry
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• 제31권4호
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• pp.636-644
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• 2004

Recently, self-etching adhesive system have been developed and bonding procedures simplified into one or two steps, which are simultaneously applied to both enamel and dentin. These systems are easy to use and have the potential for good clinical success. The purpose of this study is to evaluate in vitro the microleakage on the cementum/dentin and enamel walls in composite resin restoration of Class V cavities, regarding the use of different adhesive systems. 30 human premolars were divided into 3 groups. A standardized Class V preparation was prepared on the buccal and lingual surface of each premolar. The preparation were made parallel to the cementoenamel junctions, with the gingival half of the preparation extending 1mm apical to the cementoenamel junction. After adhesive system was applied to teeth as manufacture's recommendation, hybrid resin composite was filled in bulk into the preparation and light polymerized according to manufacturer's recommendations. Specimen were stored in distilled water at $37^{\circ}C$ for 5 days and thermocycled 1000 times ($5^{\circ}C{\pm}2^{\circ}C\;and\;55^{\circ}C{\pm}2^{\circ}C)$, then immersed in a 2% methylene blue solution for 12 hours. After sectioning mesio distally through the restorations, the degree of dye penetration was scored under a stereomicroscope at ${\times}\;25$ magnification. The data were analyzed statistically using t-test and one-way ANOVA. The results were as follows: ${\cdot}$ There is no adhesive system which can prevent microleakage perfectly. ${\cdot}$ There is significant difference in microleakage between enamel margin and dentin margin (p<0.0001). ${\cdot}$ In enamel margin, self-etching primer systems did not show any significant difference comparing total-etching system. In denin margin, self-etching primer systems did not show any significant difference comparing one-bottle adhesive system used in combination with total-etching.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제49권12호
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• pp.649-653
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• 2000

We have grown carbon nanotubes by thermal chemical vapor deposition of $C_{2}H_{2}$ on catalytic metal deposited on silicon oxide substrates. Highly purified carbon nanotubes are uniformly grown on a large area of the silicon oxide substrates. It is observed that surface modification of catalytic metals deposited on substrates by either etching with dipping in a HF solution and/or $NH_{3}$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_{2}H_{2}$ gas. The diameters of carbon naotubes could be controlled by applying the different catalytic metals.

• The Korean Journal of Ceramics
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• 제3권2호
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• pp.105-109
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• 1997

The effects of surface conditions of the C-2 cemented carbide substrate on the adhesion of diamond film were investigated. The substrates were pretreated for different times with Murakami's reagent and then the acid solution of an H2SO4-H2O2. The adhesion strength was estimated by a peeling area around the Rockwell-A indentation. The cutting performance of the diamond-coated tools was evaluated by measuring flank wears in dry turning of Al-17% Si alloy. The morphology of deposited diamond crystallites was dominated by (111) and (220) surfaces with a cubooctahedral shape. The diamond film quality was hardly affected by the surface conditions of the substrate. The variation of tool life with longer substrate etching times resulted from a compromies between the increase of film adhesion at the interface and the decrease of toughness at the substrate surface. The coated tools were mainly deteriorated by chipping and flaking of the diamond film form a lock of adhesion strength, differently from the wear phenomena of PCD tools.

• Proceedings of the Korean Nuclear Society Conference
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• 한국원자력학회 1998년도 춘계학술발표회논문집(2)
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• pp.84-89
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• 1998

Alloy 600 및 alloy 690과 Ni-8Cr-lOFe 합금 등의 응력부식(stress corrosion cracking, SCC) 거동을 고온의 염기성 분위기에서 C-ring 시편을 사용하여 연구하였다. Alloy 600과 alloy 690을 여러 조건에서 열처리하여 etching한 후 탄화물의 분포와 입계 주변의 Cr고갈 정도 등의 미세조직을 광학현미경과 주사 전자현미경(SEM)으로 관찰하였다. 이들 재료에 대한 SCC 시험을 315$^{\circ}C$의 40% NaOH 수용액에서 일정한 부하전위(부식전위 + 200㎷)를 가하면서 수행하였으며, 동일 조건에서의 분극거동도 측정하였다. Alloy 600 MA(mill anneal) 및 TT(thermal treatment)의 SCC 저항성은 alloy 690 TT와 Ni-8Cr-10Fe SA(solution anneal)보다 낮았다. Alloy 600 TT 재료는 alloy 600 MA 및 SA 재료에 비해 SCC 저항성이 더 컸다. 고용 탄소농도는 alloy 600의 SCC 저항성에 큰 영향을 주지 못했다. 대부분의 Alloy 600은 균열전파 입계균열을 보였으나, 일부에서는 입계 및 입내 혼합양상(mixed mode cracking)을 보였다. 염기성 분위기에서 Ni기 합금의 SCC 거동을 미세조직, 분극거동의 관점에서 고찰하였다.