• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.533-537
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• 2007

This paper describes the heteroepitaxial growth of single-crystalline 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350 oC for micro/nanoelectromechanical system (M/NEMS) applications, in which hexamethyldisilane (HMDS, Si2(CH3)6) was used as a safe organosilane single-source precursor. The HMDS flow rate was 0.5 sccm and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. The growth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of the grown film were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins, defects or dislocations, and a very low residual stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.184-185
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• 2007

We investigated the growth behaviors of ZnO epilayers on sapphire substrates fabricated sing RF magnetron puttering and RTA. The effects of deposition temperature and oxygen partial pressure in plasma on the structural and electrical properties were measured by XRD, AFM, SEM, and Hall effect measurement. It was found that ZnO thin films became denser and smoother with increasing deposition temperature and $O_2$ content in the puttering gas. ZnO thin film of oxygen and argon with a ratio of 5:5 had an electron concentration of $8.048{\times}10^{18}cm^{-3}$, resistivity of $0.0141{\Omega}{\cdot}Cm$, and mobility of $55.07cm^2/V{\cdot}s$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.56-61
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• 1999

Highly conductive oxide films of BaRuO$_3$ have been grown heteroepitaxially on (100) LaAlO$_3$ single crystalline substrates by using pulsed laser deposition. The films are c-axis oriented with an in-plane epitaxial relationship of <010><100>BaRuO$_3$ // <110>LaAlO$_3$. Atomic force microscopy (AFM) observation shows that they consist of a fine-arranged network of grains and have a mosaic microstructure. Generally temperature-dependent resistivity shows the transition from metallic curve to semiconductor-metallic twofold curve by the deposition conditions for Ru oxide based materials like SrRuO$_3$, CaRuO$_3$, BaRuO$_3$, etc.. This twofold curve comes from the structural similarity of Ru oxide based materials including BaRuO$_3$. We find that the distance of Ru-Ru bonding in the unit cell of BaRuO$_3$ as well as the grain boundary scattering could be the two important causes of these interesting conductive properties.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.95-99
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• 1995

keV ion beam irradiatin for surface modification and thin film growth have been discussed. keV ion beam irradiation in reactive gas environment has been developed for improving wettability of polymer, and for enhancing adhesion to metal film, and adventages of the method have been reviewed. An epitaxial Cu film on Si(100) substrate has been grown by ionized cluster beam and changes of crystallinity and surface roughness have been discussed. Stoichiometric $SnO_2$ films on Si(100) and glass have been grown by a hybrid ion beam Deposition(2 metal ion sources+1 gas ion source), and nonstoichiometric $SnO_2$ films are controlled by various deposition conditions in the HIB. Surface modification for polymer by kev ion irradiation have been developed. Wetting angle of water to PC has been changed from 68 degree to 49 degree with $Ar^+$ irradiation and to 8 degree with $Ar^+$ irradiation and the oxygen environment. Change of surface phenomena in a keV ion beam and characteristics of the grown films are suggested.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.455-464
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• 2001

Effect of bombardment of the growing film by energetic particles on its properties is know over many years and is widely used for modification of the film properties. Despite of this there are no final answers on such questions as: what is the mechanism of compositional changes that take place for some compound films deposited under the ion bombardment, how the ion bombardment influences the epitaxial growth, what mechanisms govern the growth of the film on its early stages during deposition under the ion bombardment. The role of composition of film-forming species in formation of film structure is barely investigated or even not investigated at all. Experimental evidence and discussion of the influence of ion bombardment and composition of film-forming species on structure and composition of compound films are briefly considered in the review.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.151.1-151.1
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• 2016

Complex oxide heterointerfaces have been extensively explored in the past due to the novel phenomenon emerging at such interfaces that differ from their individual bulk counterparts. The integration of a ferromagnetic (FM) material with the superconducting (SC) material leading to proximity effect is one of the commonly studied phenomenon in these heterostructures. In continuation, we have stabilized the FM layer La0.7Ca0.3MnO3 (LCMO) on SC material YBa2Cu3O7-${\delta}$ (YBCO) using pulsed laser deposition technique and explored the structural, magnetic, electrical and magneto-transport properties of this heterostructure. ${\Phi}$-scan measurements confirm the epitaxial nature of LCMO/YBCO heterostructure grown on single crystalline SrTiO3 substrate. The FM transition of LCMO and SC transition of YBCO are observed in the magnetization measurements of the bilayer structure. Through electrical measurements, we understood that the proximity effect leads to lowering of the SC transition of YBCO. The role of interface in the bilayer structure is also realized through electrical transport measurements.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.166-166
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• 2003

Si (100) 기판위에서 에피텍셜하게 자란 CoSi$_2$층은 우수한 열적안정성, 낮은 junction leakage, ultra-Shallow junction형성 등의 장점으로 인하여 많은 주목을 받아왔다. 그래서 에피텍셜 CoSi$_2$층을 형성하기 위한 많은 방법들이 보고되어 왔다. 그 방법으로는 Ti나 TiN층을 이용한 interlayer mediated epitaxy, Co의 제한적 공급을 통한 molecular beam epitaxy와 molecular beam allotaxy, 그리고 금속유기소스를 이용한 반응성화학기상증착법등이 있다. 하지만 이 방법들은 복잡한 증착공정과 열처리 후 잔류층 제거의 어려움등을 가지고 있다. 본 연구는 일반적으로 사용되는 Ti나 oxide의 중간층없이 에피층을 형성시키는 새로운 방법으로 CO-O-N 박막으로부터 열처리에 의해 확산된 Co로부터 CoSi$_2$에피층을 형성시켰다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.343-346
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• 2010

We have investigated growth of CdTe thin films by using (As, GaAs) buffer layers for application of large scale IR focal plane arrays(IFPAs). Buffer layers were grown by molecular beam epitaxy(MBE), which reduced the lattice mismatch of CdTe/Si and prevented native oxide on Si substrates. CdTe thin films were grown by metal organic chemical deposition system(MOCVD). As a result, polycrystalline CdTe films were grown on Si(100) and arsenic coated-Si(100) substrate. In other case, single crystalline CdTe(400) thin film was grown on GaAs coated-Si(100) substrate. Moreover, we observed hillock structure and mirror like surface on the (400) orientated epitaxial CdTe thin film.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.140-140
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• 2000

The effects of partial pressures of various gases on the qualities of coated conductors are studied, where the long samples were fabricated in a vacuum of a large physical vapour deposition system. The various gases such as $0_25,$H_2$,H_20$,$C_n H_m$, and CO come out from the large heating system and gives somewhat complicated effects on the interfacial chemistry at CeO/Ni which Is Important for the epitaxial growth of the film. The results of XRD measurements on the films fabricated in the controlled partial pressures of thoes gases will be presented.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.288-290
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• 1997

Pulsed laser ablation has been used to fabricate superconducting $YBa_2Cu_3O_{7-x}$(YBCO) thin films on MgO substrates. The epitaxial YBCO thin films were grown at $750^{\circ}C$ and oxygen partial pressure of 200 mTorr. The electrical property and the characteristics of the YBCO thin films have been studied by R-T measurement. scanning electron microscopy (SEM) and X-ray diffraction (XRD). A microstrip line resonator has been fabricated using YBCO superconducting thin films by photolithography and wet-etch process. The resonator has linear microstrip line separated by a gap of 0.278 mm. We observed a fundamental resonance peak at the frequency of 10.007 GHz.