• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.127.1-127.1
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• 2011

In this paper, ZnO:Al thin films with c-axis preferred orientation were prepared on Soda lime glass substrates by RF magnetron sputtering technique. AZO thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the AZO were vapor-deposited in the named order. It is well-known that post-annealing is an important method to improve crystal quality. For the annealing process, the dislocation nd other defects arise in the material and adsorption/decomposition occurs. The XRD patterns of the AZO films deposited with grey theory prediction design, annealed in a vacuum ambient($2.0{\times}10-3$Torr)at temperatures of 200, 300, 400 and $500^{\circ}C$ for a period of 30min. The diffraction patterns of all the films show the AZO films had a hexagonal wurtzite structure with a preferential orientation along the c-axis perpendicular to the substrate surface. As can be seen, the (002)peak intensities of the AZO films became more intense and sharper when the annealing temperature increased. On the other hand, When the annealing temperature was $500^{\circ}C$ the peak intensity decreased. The surface morphologies and surface toughness of films were examined by atomic force microscopy(AFM, XE-100, PSIA). Electrical resistivity, Gall mobility and carrier concentration were measured by Hall effect measuring system (HL5500PC, Accent optical Technology, USA). The optical absorption spectra of films in the ultraviolet-visibleinfrared( UV-Vis-IR) region were recorder by the UV spectrophotometer(U-3501, Hitachi, Japan). The resistivity, carrier concentration, and Hall mobility of ZnS deposited on glass substrate as a function of post-annealing.

• Journal of Soil and Groundwater Environment
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• v.8 no.4
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• pp.45-52
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• 2003

A gas-substrate degrading bacterium, Nocardia SW3, was isolated from the gasoline contaminated aquifer using propane and butane as carbon and energy sources. We have examined the effects of substrate concentration, temperature and pH on the gas substrate degradation as well as MTBE cometabolic degradation. The result for the effect of substrate concentration showed that the maximum degradation rates of propane and butane were 30.6 and 25.4 (n㏖/min/mg protein) at 70 $\mu$㏖, respectively. The optimum temperature and pH for the degradation of gas substrate were $30^{\circ}C$ and 7, respectively. Substrate degradation activity, however, was still active in broad range of pH from 5 to 8 and temperature between $15^{\circ}C$and$35^{\circ}C$. The degradation activity of Nocardia SW3 for the MTBE was similar to the both substrates. The observed maximal transformation yields ($T_y$) were 46.7 and 35.0 (n㏖ MTBE degraded $\mu$㏖ substrate utilized), and the maximal transformation capacities ($T_c$) were 320 and 280 (n㏖MTBE degraded/mg biomass used) for propane and butane oxidizing activity on MTBE, respectively. And also, TBA was detected as by-product of MTBE and it was continuously degraded further.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.35 no.5
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• pp.62-71
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• 2003

This study was carried out to develop the bio-chemical pulping method to enhance the energy saving and decrease the capital cost through the soda pulping under atmospheric pressure ($100^{\circ}C$). Nonwood substrates, rice straw, were pretreated by white-rot fungi, Pleurotus cornucopiae. Several basic pieces of data that can be applied in soda pulping were acquired. The results of this study were as follows. Under the conditions without any nutrients or with glucose, N and glucose + N, the weight losses of rice straws inoculated by Pleurotus cornucopiae were 12.1∼32.6 %, 12.0∼26.3 %, 13.0∼25.4 % and 15.3∼24.7 % for 5, 10, 15, 20, 25 and 30 days incubation periods respectively. The more the fungal incubation was extended, the more the weight losses were gained. The yield of untreated rice straw was 54.8 % after pulping. When any nutrients was not added or glucose, N and glucose ＋ N were added for the pretreatment, the total yields were ranged to 57.3∼42.9 %, 51.0∼43.3 %, 51.7∼43.9 % and 52.1∼46.1 % for 5 different incubation periods respectively. The yields were gradually decreased based on the extending of the incubation periods. The physical properties of the rice straw soda pulp without fungal treatment, the density, breaking length, burst index, tear index and folding endurance were 0.24g/㎤, 2.32 Km, 0.91 kPaㆍ$m^2$/g, 46.7 mNㆍ$m^2$/g and 21 times, respectively. In the case of pretreatment without any nutrients or with glucose, N and glucose + N as nutrients, the density was 0.24g/㎤, the breaking length was 3.30∼6.46 Km, the burst index was 1.36∼3.01 kPaㆍ$m^2$/g, the tear index was 33.0∼57.0 mNㆍ$m^2$/g and the folding endurance was 14∼381 times at most incubating periods, when pulping was done. The physical properties were increased as the incubation duration was extended. Especially, when N and glucose ＋ N were added, the physical properties showed superior results during each incubation period.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Journal of Korean Ophthalmic Optics Society
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• v.9 no.1
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• pp.35-41
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• 2004

This study investigated the crystal growth, crystalline structure and the basic optical properties of $PbSnSe/BaF_2$ epilayers. The PbSnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy (HWE) technique. It was found from the analysis of X-ray diffraction patterns that $PbSnSe/BaF_2$ epilayer was grown single crystal with a rock-salt structure oriented along [111] the growth direction. Using Rutherford back scattering, the atomic ratios of the PbSnSe was found to be proper stoichiometric. The best values for the full width at half maximum (FWHM) of the DCXRD was 162 arcsec for PbSnSe epilayer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $PbSnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}(E)$ of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points(CPs) in the optical spectra. The real and imaginary parts(${\varepsilon}1$ and ${\varepsilon}2$) of the dielectric function ${\varepsilon}$ of PbSe were measured, and the observed spectra reveal distinct structures at energies of the E1, E2 and E3 CPs. These data are analyzed using a theoretical model known as the model dielectric function (MDF). The optical constants related to dielectric function such as the complex refractive index ($n^*=n+ik$), absorption coefficient (${\alpha}$) and normal-incidence reflectivity (R) are also presented for $PbSnSe/BaF_2$.

• Asian-Australasian Journal of Animal Sciences
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• v.29 no.2
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• pp.230-240
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• 2016

Information on the effects of different yeast species on ruminal fermentation is limited. This experiment was conducted in a $3{\times}4$ factorial arrangement to explore and compare the effects of addition of three different live yeast species (Candida utilis 1314, Saccharomyces cerevisiae 1355, and Candida tropicalis 1254) at four doses (0, $0.25{\times}10^7$, $0.50{\times}10^7$, and $0.75{\times}10^7$ colony-forming unit [cfu]) on in vitro gas production kinetics, fiber degradation, methane production and ruminal fermentation characteristics of maize stover, and rice straw by mixed rumen microorganisms in dairy cows. The maximum gas production (Vf), dry matter disappearance (IVDMD), neutral detergent fiber disappearance (IVNDFD), and methane production in C. utilis group were less (p<0.01) than other two live yeast supplemented groups. The inclusion of S. cerevisiae reduced (p<0.01) the concentrations of ammonia nitrogen ($NH_3$-N), isobutyrate, and isovalerate compared to the other two yeast groups. C. tropicalis addition generally enhanced (p<0.05) IVDMD and IVNDFD. The $NH_3$-N concentration and $CH_4$ production were increased (p<0.05) by the addition of S. cerevisiae and C. tropicalis compared with the control. Supplementation of three yeast species decreased (p<0.05) or numerically decreased the ratio of acetate to propionate. The current results indicate that C. tropicalis is more preferred as yeast culture supplements, and its optimal dose should be $0.25{\times}10^7$ cfu/500 mg substrates in vitro.

• Journal of Nutrition and Health
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• v.28 no.5
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• pp.375-386
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• 1995

This study was designed to investigate the changes in energy substrates, glucose and non-esterified fatty acid(NEFA), and fatty acid compositions in serum, following physiolgical stress in rats fed diets containing various fatty acids. Forty two Sprague-Dawley strain male rats, weighing 108$\pm$2.1g, were fed 3 different experimental diets for 4 weeks. The diets were composed of 105 fat(w/w) of either corn oil(CO;18:2 n6:57%), plant perilla oil(PO;18:3 n3:59%), or tuna fish oil(FO;20:5 n3:17%%, 22:6 n3:19%). After 4 weeks of feeding, each group wa subdiveided into (a) control, (b) 2 min swim in ice-cold water. Animals wer decapitated 20min after commencing the swim; trunk blood, brain, liver and epididymal fat pad were obtained. The levels of serum corticosterone, glucose, NEFA, triglyceride, fatty acid compositions, brain serotonin and 5-hydroxyindoleacetic acid were determined. Basal levels of corticosterone na NEFA of serum were significantly lower in fish oil fed animals than those of any other oil fed animals. Compared to either perilla oil-fed or corn oil-fed rats, cold swim stress in fish oil fed rats produced significantly smaller NEFA and larger corticosterone responses. However, there was no significant difference in basal levels of serum glucose. Stress increased serum glucose levels slightly, and the amount of increment was larger in fish oil rats than those of any other oil fed rats than those of any other oil fed rats, although all the values were normal level. Dietary fats and stress did not affect serotonin metabolism. In additions, the composition of fatty acids in serum was significantly affected by the dietary compostion of fatty acids and stress. Stress induced decreases in monounsaturated fatty acid and non-polyunsaturated fatty acid concentration in either perilla oil fed or fish group, but did not in corn oil fed group. Stress resulted in changes in fatty acid metabolism similar to that associated with essential fatty acid(EFA) dificiency, when feeding animals n-3 fatty acids in diet. In conclusion, feeding fish oil was more effective to decrease NEFA in serum than feeding perilla oil or corn oil and improved lipid metabolism, when the rats were maintained in normal or exposed to stressful environment. However, the fact that feeding diet containing n-3 fatty acids decreased EFA status under stress suggests that the requirement of n-6 PUFA should be increased in these groups.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1261-1262
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• 2008

Laser-based crystallization techniques are ideally-suited for forming high-quality crystalline Si films on active-matrix display backplanes, because the highly-localized energy deposition allows for transformation of the as-deposited a-Si without damaging high-temperature-intolerant glass and plastic substrates. However, certain significant and non-trivial attributes must be satisfied for a particular method and implementation to be considered manufacturing-worthy. The crystallization process step must yield a Si microstructure that permits fabrication of thin-film transistors with sufficient uniformity and performance for the intended application and, the realization and implementation of the method must meet specific requirements of viability, robustness and economy in order to be accepted in mass production environments. In recent years, Low Temperature Polycrystalline Silicon (LTPS) has demonstrated its advantages through successful implementation in the application spaces that include highly-integrated active-matrix liquid-crystal displays (AMLCDs), cost competitive AMLCDs, and most recently, active-matrix organic light-emitting diode displays (AMOLEDs). In the mobile display market segment, LTPS continues to gain market share, as consumers demand mobile devices with higher display performance, longer battery life and reduced form factor. LTPS-based mobile displays have clearly demonstrated significant advantages in this regard. While the benefits of LTPS for mobile phones are well recognized, other mobile electronic applications such as portable multimedia players, tablet computers, ultra-mobile personal computers and notebook computers also stand to benefit from the performance and potential cost advantages offered by LTPS. Recently, significant efforts have been made to enable robust and cost-effective LTPS backplane manufacturing for AMOLED displays. The majority of the technical focus has been placed on ensuring the formation of extremely uniform poly-Si films. Although current commercially available AMOLED displays are aimed primarily at mobile applications, it is expected that continued development of the technology will soon lead to larger display sizes. Since LTPS backplanes are essentially required for AMOLED displays, LTPS manufacturing technology must be ready to scale the high degree of uniformity beyond the small and medium displays sizes. It is imperative for the manufacturers of LTPS crystallization equipment to ensure that the widespread adoption of the technology is not hindered by limitations of performance, uniformity or display size. In our presentation, we plan to present the state of the art in light sources and beam delivery systems used in high-volume manufacturing laser crystallization equipment. We will show that excimer-laser-based crystallization technologies are currently meeting the stringent requirements of AMOLED display fabrication, and are well positioned to meet the future demands for manufacturing these displays as well.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.16-22
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• 2002

This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.