• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.46-46
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• 2009

The photoconductive $AgGaSe_2$(AGS) layers were grown by the hot wall epitaxy method. The AGS layer was confirmed to be the epitaxially grown layer along the <112> direction onto the GaAs(100) substrate. The band-gap variation as a function of temperature on AGS was well fitted by $E_8(T)=1.9501-8.37{\times}10^{-4}T^2/(T+224)$. The band-gap energy of AGS obtained at 293 K was determined to be 1.8111 eV.

• Current Optics and Photonics
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• v.3 no.6
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• pp.566-570
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• 2019

To investigate dependence of the sensitivity of THz metamaterials on the position of target dielectric materials, we functionalized the metamaterial gap with an adhesive polymer. A shift in resonance frequency occurs when polystyrene microbeads are deposited in the gap of the metamaterial's metal resonator pattern, while little change is observed when they are deposited on other areas of the metasurface. A two-dimensional mapping of the sensitivity, with a grid size of 1 ㎛, is obtained from a finite-difference time-domain simulation: The frequency shift is displayed as a function of the position of a target dielectric cube. The resulting sensitivity distribution clearly reveals the crucial role of the gap in sensing with metamaterials, which is consistent with the electric field distribution near the gap.

• Journal of Photoscience
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• v.7 no.2
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• pp.67-71
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• 2000

A quantum-chemical investigation on the conformations and electronic properties of trans(diphenyl-diheterocyclic) ethenes(t-PHEs) as building block for fully $\pi$-conjuated polymer are performed in order to display the effects of heterocyclic ring substitution. Structures for the molecules, t-PHEs were fully optimized by using semiempirical AM1, PM3 methods, and ab initio HF methods, with 6-31G basic set. The potential energy curves with respect to the change of single are obtained by using ab initio HF/6-31G basic set. The curves are not similar shapes in the molecules with respect to heterocyclic rings. It is shown that the steric repulsion interactions between phenyl ring and heterocyclic ring are subjected to different type with the respect to each heterocyclic ring. Electronic properties of the molecules were molecules were obtained by applying the optimized structures and selected geometries to the extended Huckel method. To investigate the change of HOMO-LUMO gap with respedt to the torsion angle, we select the optimized structures. By using the results, the dependency of conjugation for the energy gaps is analyzed. For t-PHE the energy gap increase up to 0.52 eV compared with its planar structure. In the cases of t-PHE and t-PHE, the energy gap increase by 1.29 and 1.15 eV, respectively, compared with its planar structure.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.2
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• pp.157-166
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• 2014

A light water reactor (LWR) fuel rod consists of zirconium alloy cladding tube and uranium dioxide pellets with a slight gap between them. The modeling of heat transfer across the gap between fuel pellets and the protective cladding is essential to understanding fuel behavior under irradiated conditions. Many researchers have been developing fuel performance codes based on finite element method (FE) to calculate temperature, stress and strain for multidimensional analysis. The gap conductance model for multi-dimension is difficult issue in terms of convergence and nonlinearity because gap conductance is function of gap thickness which depends on mechanical analysis at each iteration step. In this paper, virtual link gap element (VLG) has been proposed to resolve convergence issue and nonlinear characteristic of multidimensional gap conductance. In terms of calculation accuracy and convergence efficiency, the proposed VLG model has been evaluated for variable cases.

• Journal of the Korean Society of Propulsion Engineers
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• v.11 no.3
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• pp.35-42
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• 2007

Acoustic damping induced by gap width between baffled injectors is investigated numerically, which are installed to suppress pressure oscillations in a model rocket combustor. The previous work reported that the baffled injectors show larger acoustic damping with the gap width between injectors. It is simulated numerically and its mechanism is examined. Damping factors are calculated as a function of gap width and it is found that the optimum gap is 0.1 mm or so. For understanding of the improved damping induced by the gap, dissipation rate of turbulent kinetic energy and vorticity are calculated as a function of the gap. Both parameters have their maximum values at the specific gap and especially, the dissipation rate has the same profile as that of damping factor. It verifies that the improved damping made by the gap is attributed to the increased acoustic-energy dissipation.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.490-495
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• 1994

We investigated photoreflectance of semi-insulating GaAs with respect to modulation sources, that is, modulation beam intensity, modulation frequency, temperature, and thickness of sample. PR spectra by each modulation source turned out to be signals of low electric field third differential, and band gap values of sample were fitted by least square root method for Aspnes' theoretical equation.

• Proceedings of the Membrane Society of Korea Conference
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• 2008.05a
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• pp.238-241
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• 2008

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.2
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• pp.85-90
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• 2003

In this work $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were grown by the chemical transport reaction method and the structure of $Cd_{4}GeSe_{6}$ and $Cd_{4}GeSe_{6}$ : $Co^{2+}$ single crystals were monoclinic structure. The temperature dependence of optical energy 9ap was fitted well to Varshni equation. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.42-46
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• 2000

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.239-241
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• 1996

The energy gap of GaSe:$Er^{3+}$(5mol%) single crystals grown by the Bridgman technique displaced a direct energy gap at 1.79 eV and an indirect energy gap at 1.62 eV at $300^{\circ}K$ with the addition of Erbium. Also, an impurity optical absorption peak was found to have occurred at $6505\;cm^{-1}$. The peak identified the origin of the electronic transitions between the energy levels of $Er^{3+}$ ions when the addition of dopant.