• The Journal of the Korea institute of electronic communication sciences
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• v.11 no.12
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• pp.1165-1174
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• 2016

The energy band gaps and the bowing parameters of zincblende InAs1-xN are determined by using an empirical pseudopotential method(EPM) within the improved virtual crystal approximation(VCA), which includes the disorder effect. The direct-band-gap bowing parameter calculated by using the EPM is 4.1eV for InAs1-xNx ($0{\leq}x{\leq}0.05$). The dependences of the band gaps of N-dilute InAs1-xNx on the temperature and composition are calculated by modifying the band anti-crossing(BAC) model. The calculation results are consistent with experimental values, and the coupling parameter CMN of InAs1-xNx is found to be equal to 1.8 by fitting the EPM data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.46-46
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• 2009

The photoconductive $AgGaSe_2$(AGS) layers were grown by the hot wall epitaxy method. The AGS layer was confirmed to be the epitaxially grown layer along the <112> direction onto the GaAs(100) substrate. The band-gap variation as a function of temperature on AGS was well fitted by $E_8(T)=1.9501-8.37{\times}10^{-4}T^2/(T+224)$. The band-gap energy of AGS obtained at 293 K was determined to be 1.8111 eV.

• Journal of Radiation Protection and Research
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• v.26 no.2
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• pp.113-117
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• 2001

The energy band method for NaI spectrum calculates only the exposure rate due to natural radiation because it calculates exposure rate using energy spectrum of $1300{\sim}3000keV$. However, the total energy method includes in its calculation the exposure rate due to man-made radiation because it uses the energy spectrum of $150{\sim}3400keV$. Therefore, the resulting difference of extracting the exposure rate calculated by the energy band method from the exposure rate calculated by the total energy method is apparently the exposure rate due to man-made radiation. In this study, we measured the NaI spectrum during the period of significant changes of the exposure rate in the area without a man-made radiation. As the results, we found the exposure rates calculated by those two methods are equal within the statistical variation of ${\pm}0.3{\mu}R\;h^{-1}$. Consequently, if the difference between the exposure rates calculated by the two methods exists, it may be due to the man-made radiation exposure rate.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.66 no.4
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• pp.200-205
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• 2017

In this paper, we propose a technique to determine the normal and arc of an alternating current using a mixed filter composed of an average filter and a band-pass filter and a frequency analysis. The proposed method uses the moving average filter of the FIR filter structure for noise removal and the band-pass filter of the IIR filter structure for detecting only specific frequency components after normalizing the measured current signal based on the maximum value. After performing Fast Fourier Transform (FFT) using the band-pass filtered signal, the total energy is calculated using the magnitude component of the frequency, and the arc is detected using the magnitude of the calculated energy. In order to show the validity of the proposed method, we experimented with various data and found that arc and steady state can be easily discriminated by calculating spectral energy. Therefore, it is considered that the proposed method can be applied to arc diagnosis of low voltage electric wire.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.123-124
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• 2007

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the liteniture. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The temperature dependence of the energy band gap of the $AgInS_2$ obtained from the photocurrent spectrum was well described by the Varshni's relation, $E_g(T)=\;E_g(0)\;eV-(7.78\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;116\;K\;K)$. Also, Eg(0) is the energy band gap at 0 K, which is estimated to be 2.036 eV at the valence band state A and 2.186 eV at the valence band state B.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.5
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• pp.877-886
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• 2019

The energy band gaps and optical constants of zincblende $In_yGa_{1-y}As_{1-x}N_x$ on the variation of temperature and composition are determined by using band anticrossing method. The energy band gaps are decreasing continuously in $In_yGa_{1-y}As_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, $0{\leq}y{\leq}1.0$, 300K) and the bowing parameter is calculated as 0.522eV. The calculation results of energy band gaps are consistent with those of other studies. A refractive index n and a high-frequency dielectric constant ${\varepsilon}$ are calculated by a proposed modeling equation using the results of energy band gaps.

• Electrical & Electronic Materials
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• v.7 no.6
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• pp.490-495
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• 1994

We investigated photoreflectance of semi-insulating GaAs with respect to modulation sources, that is, modulation beam intensity, modulation frequency, temperature, and thickness of sample. PR spectra by each modulation source turned out to be signals of low electric field third differential, and band gap values of sample were fitted by least square root method for Aspnes' theoretical equation.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.3
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• pp.137-141
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• 2002

CdS and $CdS:Co^{2+}$ single crystals were grown by CTR method using iodine as transport material. The grown single crystals have defect chalcopyrite structure with direct band gap. The optical energy band gap was decreased according to add of Co-impurity. We can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.7 no.1
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• pp.69-74
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• 1998

In order to monitor the tool wear in milling operation, cutting force is measured as the tool wear increased. The digital signal processing methods are used to detect the tool wear . As AR parameter extract the feature of tool wear , it can be used as input parameter of pattern classifier. The FFT monitor the tool wear exactly , but it can not do real time signal processing. The band energy method can be used to real time monitoring of tool wear ,but int can degrade the exact monitoring.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.267-270
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• 2004

A silver indium sulfide($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high qualify crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks. are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\ddot{A}cr$, and the spin orbit splitting, $\ddot{A}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_g(T)$, was determined.