• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.129.2-129.2
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• 2011

본 연구에서는 a-Si:H/c-si 구조의 이종접합 태양전지의 p a-Si:H 에미터 층의 박막 조건에 따라 태양전지 특성을 연구하였다. p, n-layer는 PECVD (Plasma-enhanced chemical vapor deposition) i-layer는 HWCVD(Hot wire chemical vapor deposition), ITO는 RF 마그네트론 스퍼터링법으로 제작하였다. p-layer의 도핑 농도, 기판 증착 온도, 증착 높낮이에 따라 특성을 비교 분석 하였다. QSSPC로 minority carrier life time, 자외 가시선 분광분석 장치로 투과 반사도를, Ellipsometer로 흡수 계수, 두께, FTIR로 막의 구성요소 등의 변화를 조사하여 개선된 p a-Si:H의 특성이 이종접합 태양전지에서 효율향상에 영향을 주는지 Photo IV와 EQE를 통하여 조사하였다.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.166-172
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• 1994

박막이 성장하는 동안 박막성장 상태를 관찰하기 위한 in-냐셔 타원해석기를 제작하였다. 이 타 원해석기는 He-Ne 레이저를 광원으로 사용하며 회전검광자형으로 광량측정방식을 채택하였다. 이 타원 해석기는 편광자 모듈과 검광자 모듈 및 제어부로 구성되어 있으며 이들 모듈은 각각 스퍼터링 챔버에 부착되었다. c-Si 기판 위에 열산화 과정으로 성장시킨 SiO2 박막을 표준시료로 사용하여 보정 및 성능 평가를 하였다 또한 RF 스퍼터링으로 c-Si 기판 위에 SiO2 박막을 성장시키면서 타원해석상수 ΨΔ를 측정하고 근사적 모델에 의한 ΨΔ의 전산모의 성장곡선과 비교해 보았다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.139-141
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• 2007

Thin films of polyimide (Pl) were fabricated by a vapor deposition polymerization method (VDPM) and studied for the photosensitive characteristic. Polyamic acid (PAA) thin films fabricated by vapor deposition polymerization (VDP) from 6FDA and 4-4' DDE were converted to PI thin films by thermal curing. From AFM and Ellipsometer experimental, the films thickness was decreased and the reflectance was increased as the curing temperature was increased. Those results implies that thin film is uniform. From UV-Vis spectra, PI thin films showed high absorbance in 225 $\sim$ 260 [nm] region.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1376-1379
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• 2007

The effects of the MgO fabrication process on the properties of AC-PDPs were examined. MgO films were deposited by e-beam evaporation with various substrate temperatures and oxygen flow rates. MgO films were analyzed by XRD, CL and ellipsometer. Panel properties such as luminance, efficiency, discharge voltage and discharge delay time were measured with test panels. MgO films with higher temperature, smaller oxygen flow rate showed shorter discharge delay time. Also they showed smaller XRD peak intensity. These results revealed that the discharge delay time was strongly influenced by temperature and oxygen flow rate of the MgO fabrication process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1039-1042
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• 2001

A method for designing antireflection (AR) and antistatic (AS) films by the use of conducting polymer as an electrically conductive transparent layer is proposed. The conducting AR film is composed of four-layer with alternating high and low refractive index layer: silicon dioxide (n=1.44) and titanium dioxide (n=2.02) prepared at low temperature by sol-gel method are used as the low and high refractive index layer, respectively. The 3,4-polyethylenedioxythiophene (PEDOT) which has the sheet resistance of 10$^4$$\Omega$/$\square$ is used as a conductive layer. Optical constant of ARAS film was measured by the spectroscopic ellipsometer and from the measured optical constants the spectral properties such as reflectance and transmittance were simulated in the visible region. The reflectance of ARAS films on glass substrate was below 0.8 %R and the transmittance was higher than 95 % in the visible wavelength (400-700 nm). The measured AR spectral properties was very similar to its simulated results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.374-375
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• 2006

The purpose of this paper is to investigate the propriety of biodegradable polymer pad in spite of exchanging from existing polyurethane pad used in CMP(Chemical Mechanical Planarization). Poli 400 of G&P Technology for CMP and Ellipsometer of Rudolph AutoEL-III for measurement were used in this experiment. From this experiment, it is proven that the biodegradable polymer pad is sufficiently suitable in CMP process. Therefore, it is expected that, by using the biodegrable pad CMP manufacturing process, and will be decreased. Especially, wafer scratch can be decreased.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.761-763
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• 1998

In this paper, Co-Cr thin films which are known for a excellent perpendicular magnetic recording media were prepared. Changing target- substrate distance, Ar gas pressure and arriving atoms, the incident angle and c-axis orientation properties by using the facing targets sputtering system. We evaluated the c-axis dispersion angle by measu ring half-height width with Micro area X-Ray Diffractometer, measured the thickness of thin film with Ellipsometer. The magnetic properties were compared measuring in-plane squareness and perpendicular coercivity with vibrating sample Magnetometer.

• Journal of Surface Science and Engineering
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• v.25 no.6
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• pp.287-292
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• 1992

Silicon nitride thin film (SiNx) was deposited onto the 3inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The thin films which were deposited by changing the SiH4N2 gas flow rate ratio at 1.5mTorr without substrate heating were analyzed through the x-ray photo spectroscopy (XPS) and ellipsometer measurements, etc. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method at low substrate temperature (<10$0^{\circ}C$) exhibited excellent physical and electrical properties. The very uniform and good quality silicon nitride thin films were obtained. The characteristics of electron cyclotron resonance plasma were inferred from the analyzed results of the deposited films.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.37-39
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• 2006

We employed in-situ spectroscopic ellipsometry(SE) and imaging ellipsometry(IE) to study the interaction of water and photoresist(PR) in 193 immersion lithography. Real time measurement of SE showed thickness increase when PR was immerged in water indicating swelling effect. From the temporal evolution we could observe its reaction-limited behavior. Meanwhile, IE could identify the modification of PR surface by contact of water even for a short period of a second.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.7
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• pp.149-155
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• 1996

A new technique wasdeveloped which obtains selectively the htick fully recessed oxidized porous silicon layer (OPSL) with good dielectric property. The porous silicon layer was ocnverted to thick fully recessed oxide (FRO) with 3-step (1${\mu}$m, 1.5${\mu}$m, 1.8${\mu}$m) by multi-step thermal oxidation (after 400$^{\circ}$C, 1 hour by dry oxidation, 700$^{\circ}$C, 1 hour and then 1100$^{\circ}$C, 1 hour by wet oxidation). The breakdwon field of the FRO was about 2.5MV/cm and the leakage current was several pA ~ 100 pA in the range of 0 of 90 pF. The progress of oxidation of a porous silicon layer was studied by examining the infrared abosrption spectra. The refractive index (1.51) of the fRO, which was measured by ellipsometer, was comparable to that of the thermally grown silicon dioxide (1.46). The etching rate (1600${\AA}$/min) of the FRO was also almost equal to that of the thermal oxide.