• Journal of the Korea Society of Computer and Information
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• v.17 no.2
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• pp.87-94
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• 2012

Mechanical break system used in train, that mixed air break & electronic break system. this system suggest lots of ways for modify efficiency and solution of environmental problems due to recently intend to green growth. The mechanical break system has environmental & economical problem. Environmental sides(problem) are dust and noise etc and economical sides(problem) are replaced the spare parts that are breaking shoe and lining ect. For compensate those kind of weak points, we needs a wide territories of electronic break which is from high speed range to stop. This research is estimated the load torque due to an incline and stop the train method also check the characteristic of stop the train to estimate a torque follow the sharp drop.

• Journal of Electrical Engineering and Technology
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• v.7 no.2
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• pp.151-156
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• 2012

The current study presents a zero-one integer programming approach to determine the minimum break point set for the coordination of directional relays. First, the network is reduced if there are any parallel lines or three-end nodes. Second, all the directed loops are enumerated to reduce the iteration. Finally, the problem is formulated as a set-covering problem, and the break point set is determined using the zero-one integer programming technique. Arbitrary starting relay locations and the arbitrary consideration of relay sequence to set and coordinate relays result in navigating the loops many times and futile attempts to achieve system-wide relay coordination. These algorithms are compared with the existing methods, and the results are presented. The problem is formulated as a setcovering problem solved by the zero-one integer programming approach using LINGO 12, an optimization modeling software.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.376-377
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• 2009

In the study the affect of $SiO_$ depending on the characteristics of break-down, we have experimented the break-down for the $SiO_$ and variable temperature change after mading nano $SiO_$ of the diameter 12 [nm] at the epoxy resin. As the experimental results, we have continued that the break-down strength is increased at the adding change but the break-down strength is decreased again as the 0.4 [wt%] standard. Also, the break-down voltage is not changed at 25, 50 [$^{\circ}C$] as the temperate change. But break-down voltage is largely changed when temperate is rising up.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.241-241
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• 2009

For the Radio Frequency Integrated Passive Device (RFIPD) application, we have successfully developed and characterized high break-down voltage metal-insulator-metal (MIM) capacitors with 2,000 ${\AA}$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which deposited with $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$ chamber temperature. At the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the AFM RMS value of about 2,000 ${\AA}$ silicon nitride on the bottom metal was the lowest of 0.862 nm and break-down electric field was the highest of about 8.0 MV/cm with the capacitance density of 326.5 $pF/mm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.360-361
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• 2005

Rapid progress in IC fabrication technology has strong demand in polishing of silicon wafer to meet the tight specification of nanotopography and surface roughness. One of the important issues in Si CMP is the stabilization of polishing pad. If a polishing pad is not stabilized before main Si wafer polishing process, good polishing result can not be expected. Therefore, new pad must be subjected into break-in process using dummy wafers for a certain period of time to enhance its performance. After the break-in process, the main Si wafer polishing process must be performed. In this study, the characteristics of break-in process were investigated in Si wafer polishing. Viscoelastic behavior, temperature variation of pad and friction were measured to evaluate the break-in phenomenon. Also, it is found that the characteristic of the break-in seems to be related to viscoelastic behavior of pad.

• Explosives and Blasting
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• v.36 no.1
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• pp.34-38
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• 2018

It proceed the trial test by applying blasting system with combination of electronic detonator and non-electric detonator(Supex Blasting Method) for the purpose of preventing the over-break as well as controling the blasting vibration and noisy at the site of Boseong-Imseongri railroad section ${\bigcirc}{\bigcirc}$. As a result of that, the blasting vibration and noisy was measured within the allowable standard of vibration. In conclusion, the combination of electronic detonator and non-electric detonator can not only reduce come construction cost, level of vibration and noisy but also get the prevention effect for Public resentment and minimize the rock-damage through over break control.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.104-110
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• 2008

In this paper we proposed a new source-drain structure for N-type MOSFET which can suppress the output resistance reduction of a device in saturation region due to soft break down leakage at high drain voltage when the gate is biased around relatively low voltage. When a device is generally used as a switch at high gate bias the current level is very important for the operation. but in electronic circuit like an amplifier we should mainly consider the output resistance for the stable voltage gain and the operation at low gate bias. Hence with T-SUPREM simulator we designed devices that operate at low gate bias and high gate bias respectively without a extra photo mask layer and ion-implantation steps. As a result the soft break down leakage due to impact ionization is reduced remarkably and the output resistance increases about 3 times in the device that operates at the low gate bias. Also it is expected that electronic circuit designers can easily design a circuit using the offered N-type MOSFET device with the better output resistance.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.5
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• pp.299-304
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• 2018

An ideal circuit breaker should supply electric power to loads without losses in a conduction state and completely isolate the load from the power source by providing insulation strength in a break state. Fault current is relatively easy to break in an Alternating Current (AC) circuit breaker because the AC current becomes zero at every half cycle. However, fault current in DC circuit breaker (DCCB) should be reduced by generating a high arc voltage at the breaker contact point. Large fire may occur if the DCCB does not take sufficient arc voltage and allows the continuous flow of the arc fault current with high temperature. A semiconductor circuit breaker with a power electronic device has many advantages. These advantages include quick breaking time, lack of arc generation, and lower noise than mechanical circuit breakers. However, a large load capacity cannot be applied because of large conduction loss. An extinguishing technology of DCCB with polymeric positive temperature coefficient (PPTC) device is proposed and evaluated through experiments in this study to take advantage of low conduction loss of mechanical circuit breaker and arcless breaking characteristic of semiconductor devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.61-64
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• 2000

Three kinds of treeing inhibitors are added to investigate the effect on electrical properties of XLPE. The treeing inhibitors are barbituric acid, 4- (4-Nitrophenylazo) resorcinol and 4-(4-Nitrophenylazo) naphthol. Added amount of each treeing inhibitors varied form 0phr to 2.0phr. In order to know the changes of electrical properties, break down strength, tan$\delta$, and $\varepsilon$$_{r}$ were measured. Experimental results showed that electrical properties of each sample was slightly changed by amount of additives.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.169-172
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• 2000

In this paper, we evaluated the mechanical and dielectric properties of LDPE depend on $Co_{60}$${\gamma}$-irradiation doses. The chemical analyses for FT-IR, gel content, the mechanical properties for elongation at break and the dielectric parameters for permittivity, tan$\delta$ were discussed as a function of irradiation doses. Test result presented that elongation at break of irradiated LDPE was inversely proportional to gel content. For dielectric analyses, permittivity showed a salient characteristic for various irradiation doses, it was related to polar groups caused radiation degradation and tan$\delta$ of irradiated LDPE increased with irradiation doses.