• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.746-750
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• 2003

Using the Czochralski method, Er$_2$O$_3$ doped near stoichiometric LiNbO$_3$ single crystals were grown 15~20 mm in diameter and 30-35 mm in length for Z-axis. Lattice constants were inspected by the X-Ray Diffractometer (XRD) and through Fourier Transform-Infrared Spectrophotometer (FT-IR), it observed absorption band. Also, the distributions of Er concentration were confirmed by the Electron Probe Micro Analysis (EPMA).

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.2072-2076
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• 2014

Sub-micrometer size gold particles were electrodeposited on a transparent fluorine-doped tin oxide (FTO) from acetonitrile solution containing $AuCl_4{^-}$ and tetramethylammonium tetraflouroborate (TMATFB) for detecting $NO_2{^-}$. A series of two-electron ($2e^-$) and one-electron ($1e^-$) reductions of the $AuCl_4{^-}-AuCl_2{^-}-Au$ redox systems were observed at FTO and a highly stable and homogeneous distribution of Au on FTO (Au/FTO) was obtained by stepping the potential from 0 to -0.55 V (vs. Ag/$Ag^+$). The Au/FTO electrode exhibited sufficiently high catalytic activity toward the oxidation of $NO_2{^-}$ with a detection limit (S/N = 3) and sensitivity of 2.95 ${\mu}M$ and 223.4 ${\mu}A{\cdot}cm^{-2}{\cdot}mM^{-1}$, respectively, under optimal conditions. It exhibited an interference-free signal for $NO_2{^-}$ detection with excellent recoveries from real samples.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.3
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• pp.161-165
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• 2002

Ge-doped rnulticomponent oxide glasses were prepared by a conventional melting method. The change of micro structure in glasses was investigated by using PL (photoluminescence) and ESR (electron spin resonance). Before UV irradiation, the PL intensity increased according to germanium contents, but decreased the intensity as soon as UV irradiation. A changed property was recovered near it original properties when it was annealed. These photodarkening and thermal bleaching effect were observed by ESR intrument. These effect did not change the glass phase but vary only change of micro structure.

• Journal of Hydrogen and New Energy
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• v.22 no.5
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• pp.656-662
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• 2011

The purpose of this study was to correlate between photoelectrochemcial hydrogen production rate and electron transfer with various types of metal doped $TiO_2$ nanotubes as photoanodes. In order to fabricate light sensitized photoanode, CdS, $WO_3$, and Pt were doped by electrodeposition method. As the results of experiments, the electron transfer was favorable from higher position to lower position of conduction band (CB). In consequence, the higher hydrogen production rate was as follows, CdS/$TiO_2$ (100 $umol/hr-cm^2$) > $WO_3/TiO_2$ (20 $umol/hr-cm^2$) > Pt/$TiO_2$ (10 $umol/hr-cm^2$). The surface characterizations exhibited that crystal structure, morphological and electrical properties of various metal depoed $TiO_2$ nanotubes by the results of SEM, TEM, XPS, and photocurrent measurements.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.686-692
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• 2000

Tin-doped In2O3 (ITO) films were fabricated using a d.c. magnetron reactive sputteirng of a In-10 wt% Sn alloy target in an Ar and O2 gas mixture. To understand the behavior of the carrier mobility in ITO films with O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured with O2 partial pressure. It was found experimentally that the carrier mobility increased rapidly as the film density increased. In the ITO film with the density close to theoretical one, the mean free path was the same as the columnar diameter. This indicated that the mobility in ITO films was strongly influenced by the crystall size. However, in the case where the film density was smaller than a theoretical density, the mean free paths were also smaller the columnar diameter. It was analyzed that the electron scattering at pores and holes within the crystalline was the major obstacle for electron conduction in ITO films. The measurement of intrinsic stress in ITO films also made it clear that the density of ITO films was controlled by the bombardment of oxygen neutrals on the growing film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.641-646
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• 2011

Ga-doped ZnO-$SnO_2$ (ZSGO) films were deposited by rf magnetron sputtering and their structural and electrical properties were investigated. In order to fabricate the target for sputtering, the mixture of ZnO, $SnO_2$ (1:1 weight ratio) and $Ga_2O_3$ (3.0 wt%) powder was calcined at $800^{\circ}C$ for 1 h. The substrate temperature was varied from room temperature to $300^{\circ}C$. The crystallographic properties and the surface morphologies of the films were studied by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The optical transmittances of the films were measured and the optical energy band gaps were obtained from the absorption coefficients. The resistivity variation with substrate temperature was measured. Auger electron spectroscopy was employed to find the atomic ratio of Zn, Sn, Ga and O in the film deposited at room temperature. ZSGO films exhibited the optical transmittance in the visible region of more than 80% and resistivity higher than $10\;{\Omega}cm$.

• Transactions on Electrical and Electronic Materials
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• v.11 no.1
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• pp.29-32
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• 2010

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.4
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• pp.132-138
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• 2023

Doped and undoped-BiVO₄ samples with different elements (Li, Mg) and amounts were synthesized with a hydrothermal method. The synthesized samples were characterized using various techniques including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Vis diffusion reflectance spectroscopy (UV-Vis DRS), and photoluminescence (PL) spectroscopy. Photocatalytic activity of the samples was evaluated by measuring the degradation of methyl blue (MB) under visible light irradiation. The results indicated that the incorporation of Mg and Li into BiVO₄ caused lattice distortion, the presence of surface hydroxyl groups, a narrower band gap, and a reduced recombination ratio of photo-induced electron-hole pairs. Notably, the photocatalytic activity of Mg5%-Li5% co-doped BiVO₄ sample exhibited a significant improvement compared to that of undoped BiVO₄ sample.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.407-410
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• 2012

The properties of Al-doped ZnO (AZO) films were investigated as a function of H2/(Ar + H2) gas ratio using an AZO (2 wt% Al2O3) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at 200 ℃ and in 2 × 10-2Torr working pressure and with various ratios of H2/(Ar + H2) gas. During the AZO film deposition process, partial H2 gas affected the AZO film characteristics. The electron resistivity (~ 9.21 × 10-4 Ωcm) was lowest and mobility (~17.8 ㎠/Vs) was highest in AZO films when the H2/(Ar + H2) gas ratio was 2.5%. When the H2/(Ar + H2) gas ratio was increased above 2.5%, the electron resistivity increased and mobility decreased with increasing H2/(Ar + H2) gas ratio in AZO films. The carrier concentration increased with increasing H2/(Ar + H2) gas ratio from 0% to 7.5%. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90% and an orientation of the deposition was [002] orientation for AZO films grown with all H2/(Ar + H2) gas ratios.

• Carbon letters
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• v.22
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• pp.60-69
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• 2017

Nitrogen-doped carbon nanosheets with a developed porous structure were prepared from polyurethane foams by hydrothermal carbonization following $ZnCl_2$ chemical activation. Scanning electron microscopy, thermogravimetric analysis, Fourier transform infrared spectroscopy, solid state $^{13}C$ nuclear magnetic resonance (NMR) spectra and X-ray photoelectron spectroscopy were used to characterize the nitrogen-doped carbon nanosheet structure and composition. The removal of Cr(VI) by the N-doped carbon nanosheets was investigated. The results showed that the maximum removal capacity for chromium of 188 mg/g was found at pH=2.0 with PHC-Z-3. pH had an important effect on Cr(VI) removal and the optimal pH was 2.0. Moreover, amino groups and carboxyl groups in the nitrogen-doped carbon nanosheet played important roles in Cr(VI) removal, and promoted the reduction of Cr(VI) to Cr(III).