• Title/Summary/Keyword: electron-doped

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Properties of Ge,Ga and Ga-doped ZnO thin films prepared by RF magnetron sputtering (RF magnetron sputtering으로 생성한 Ga,Ge와 Ga이 도핑된 ZnO 박막의 특성)

  • Jung, Il-Hyun;Kim, Yu-Jin;Park, Jung-Yoon;Lee, Ru-Da
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.3
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    • pp.41-45
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    • 2010
  • The ZnO thin films doped with Ga(GZO) and both Ga and Ge(GZO:Ge) were deposited on glass substrate by using RF sputtering system respectively. Structural, morphological and optical properties of the films deposited in the same condition were investigated. Structural properties of the films were investigated by Field Emission Scanning Electron Microscopy, FE-SEM images and X-ray diffraction, XRD analysis. These studies showed shape of films' surface and direction of film growth respectively. It's showed that all films were deposited by vertical orientation strongly. It can be confirmed that all dopants of targets were included in deposited films by results of EDX analysis. UV-Vis spectrometer results showed that all samples had highly transparent characteristics in visible region and have similar 3.28~3.31 eV band gap. It was found that existence of all dopants by EDX analysis. Morphology and roughness of surface of each film were clearly shown by Atomic Force Microscopy, AFM images. It was found in this research that film doped with Ge more dense and stable with hardly any difference in gap energy compared to ZnO films.

Effect of Sc doping on the electron emission properties of an MgO protective layer.

  • Matulevich, Y.T.;Lee, Min-Suk;Moon, Sung-Hwan;Choi, Jong-Seo;Zang, Dong-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1057-1059
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    • 2008
  • Study of the ion-induced-, photo- and exo-electron emission from a Sc doped MgO protective layer has been performed. It is established that doping with Sc increases photo- and especially exo-electron emission from MgO films while the ion-induced electron emission coefficient $\gamma$ stays unchanged.

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Electron Spin Resonance and Electron Nuclear Double Resonance Studies on the Photoinduced Charge Separation of N-Methylphenothiazine in Phenyltriethoxysilane, Vinyltriethoxysilane and Methyltriethoxysilane Gel Matrices

  • Kang, Young-Soo;Park, Chan-Young
    • Journal of the Korean Magnetic Resonance Society
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    • v.4 no.2
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    • pp.91-102
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    • 2000
  • The photoproduced cation radical of N-methylphenothiazine doped in the different kind of matrices of phenyltriethoxysilane (PhiTEOS), vinyltriethoxysilane (VTEOS), and methyloiethoxysilane (METOS) was comparatively studied with electron spin resonance (ESR) and electron nuclear double resonance (ENDOR). The photoinduced charge separation efficiency was determined by integration of ESR spectra which correspond to the amount of photoproduced cation radical in the matrices. This was correlatively studied with the polarity and pore size of the gel matrices. The polarity of the matrices was comparatively determined by measuring λ$\sub$max/ values of PC$_1$ in the different matrices. The relative pore size among the matrices was determined by measuring relative proton matrix ENDOR line widths of the photoproduced cation radical of PCI. The decay kinetic constants of the cation radical of PCI in the different matrices was relatively studied with fitting the biexponential decay curves after exposure into the ambient condition. This is correlatively interpreted with the polarity and pore size of the matrices.

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An a-D film for flat panel displays prepared by FAD

  • Liu, Xianghuai;Mao, Dongsheng
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.7-14
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    • 1998
  • Details are given of an study of the characteristics of field-induced electron emission from hydrogen-free high $sp^3$ content(>90%) amorphous diamond (a-D) film deposited on heavily doped ($\rho$<0.01 $\Omega\cdot\textrm{cm}$) n-type monocrystalline Si(111) substrate. It is demonstrated that a-D film has excellent electron field emission properties. Emission current can reach 0.9 $\mu$A at applied field as low as 1 V/$\mu\textrm{m}$, and emission current density can be obtained about several mA/$\textrm{cm}^2$. The emission current is stable when the beginning current is at 50 $\mu$A within 72 hours. Uniform fluorescence display of electron emission from whole face of the a-D film under the electric field of 10~20 V/$\mu\textrm{m}$ was also observed. It can be considered that the contribution of excellent electron emission property results from its smooth, uniform, amorphous surface and high $sp^3$ content of the a-D films.

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Electrochemical Impedance Spectroscopy Analysis on the Dye-sensitized Solar Cell with Different $TiO_2$ thicknesses ($TiO_2$ 두께에 따른 염료감응형 태양전지의 전기화학적 임피던스 분석)

  • Kim, Hee-Je;Lee, Jeong-Gee;Seo, Hyun-Woong;Son, Min-Kyu;Kim, Jin-Kyoung;Prabalkar, K.;Shin, In-Young
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.12
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    • pp.2425-2430
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    • 2009
  • Dye-sensitized solar cell(DSC) is composed of a dye-adsorbed nanoporous $TiO_2$ layer on fluorine-doped tin oxide(FTO) glass substrate, electrolyte, and platinium doped counter electrode. Among these, a dye-absorbed nanoporous $TiO_2$ layer plays an important role in the performance of the DSC because the injected electrons from excited dye molecules move through this layer. And the condition of $TiO_2$ layer such as the morphology and thickness affects on the electron movement. Therefore, the performances and the efficiency of DSC change as the thickness of $TiO_2$ layer is different. Electrochemical Impedance Spectroscopy(EIS) is the powerful analysis method to study the kinetics of electrochemical and photoelectrochemical processes occurring in the DSC especially the injected electron movements. So we analyzed the DSCs with different $TiO_2$ thicknesses by using EIS to understand the influence of the $TiO_2$ thickness to the performance of the DSC clearly. Finally, we got the EIS analysis on the DSC with different $TiO_2$ thickness from the internal resistance of the DSC, the electron life time and the amount of dye molecules.